• JSTS:Journal of Semiconductor Technology and Science
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• 제16권5호
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• pp.595-604
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• 2016

Utilizing a standard 130-nm CMOS process, a RF frontend is designed at 24 GHz for automotive collision avoidance radar application. Single IF direct conversion receiver (DCR) architecture is adopted to achieve high integration level and to alleviate the DCR problem. The proposed frontend is composed of a two-stage LNA and downconversion mixers. To save power consumption, and to enhance gain and linearity, stacked NMOS-PMOS $g_m$-boosting technique is employed in the design of LNA as the first stage. The switch transistors in the mixing stage are biased in subthreshold region to achieve low power consumption. The single balanced mixer is designed in PMOS transistors and is also realized based on the well-known folded architecture to increase voltage headroom. This frontend circuit features enhancement in gain, linearity, and power dissipation. The proposed circuit showed a maximum conversion gain of 19.6 dB and noise figure of 3 dB at the operation frequency. It also showed input and output return losses of less than -10 dB within bandwidth. Furthermore, the port-to-port isolation illustrated excellent characteristic between two ports. This frontend showed the third-order input intercept point (IIP3) of 3 dBm for the whole circuit with power dissipation of 6.5 mW from a 1.5 V supply.

• 전자공학회논문지
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• 제51권9호
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• pp.67-74
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• 2014

본 논문은 멤리스터-CMOS 기반의 잉여 이진 부호화 자리수 (RBSD) 가산기를 제안한다. 기존의 RBSD 가산기는 리플 캐리 가산기에 비해 큰 면적을 차지한다. 또한 처리하는 비트 수가 적을 때 연산 속도가 느린 단점이 있다. 제안된 RBSD 가산기는 기존 RBSD 가산기의 단점을 보완하기 위해 멤리스터-CMOS 회로를 사용한다. 제안된 멤리스터-CMOS 기반의 RBSD 가산기는 기존 RBSD 가산기에 비해 단위 셀 면적이 45% 감소하였고, 지연시간이 24% 감소하였다. 제안된 멤리스터-CMOS 기반의 RBSD 가산기의 구현으로 인해 RBSD 가산기의 장점이 더욱 부각되고, 대용량 회로에서 더 큰 이득을 얻는다.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2003년도 하계종합학술대회 논문집 II
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• pp.863-866
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• 2003

Recently, there has been growing interests in the magneto-resistive random access memory (MRAM) because of its great potential as a future nonvolatile memory. In this paper, a CMOS macro-model for MRAM cell based on a twin cell structure is proposed. The READ and WRITE operations of the MTJ cell can be emulated by adopting data latch and switch blocks. The behavior of the circuit is confirmed by HSPICE simulations in a 0.35-${\mu}{\textrm}{m}$ CMOS process. We expect the macro model can be utilized to develope the core architecture and the peripheral circuitry. It can also be used for the characterization and the direction of the real MTJ cells.

• 한국통신학회논문지
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• 제29권10A호
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• pp.1205-1214
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• 2004

CMOS 회로에서 발생하는 물리적인 결함에 대해서 전류 테스팅은 전압 테스팅으로 검출할 수 없는 많은 결함을 효율적으로 검출할 수 있는 기법이다. 테스트 회로에 존재하는 결함이나 장애의 영향을 기술하기 위해서 사용되는 고장모델은 실제적인 장애를 정확하게 모델링해야 한다. 본 논문에서는 전류 테스팅에 자주 이용되는 고장모델을 위한 효율적인 중첩 알고리즘을 제안한다. ISCAS 벤치마크 회로의 모의실험을 통하여 제안된 방식이 고려되는 고장의 수를 효과적으로 감소시킬 수 있고 다양한 전류 테스팅 방식의 고장모델에 더 적합함을 확인하였다.

• ETRI Journal
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• 제38권2호
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• pp.272-279
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• 2016

In this paper, a new structure for an advanced high holding voltage silicon controlled rectifier (AHHVSCR) is proposed. The proposed new structure specifically for an AHHVSCR-based electrostatic discharge (ESD) protection circuit can protect integrated circuits from ESD stress. The new structure involves the insertion of a PMOS into an AHHVSCR so as to prevent a state of latch-up from occurring due to a low holding voltage. We use a TACD simulation to conduct a comparative analysis of three types of circuit - (i) an AHHVSCR-based ESD protection circuit having the proposed new structure (that is, a PMOS inserted into the AHHVSCR), (ii) a standard AHHVSCR-based ESD protection circuit, and (iii) a standard HHVSCR-based ESD protection circuit. A circuit having the proposed new structure is fabricated using $0.18{\mu}m$ Bipolar-CMOS-DMOS technology. The fabricated circuit is also evaluated using Transmission-Line Pulse measurements to confirm its electrical characteristics, and human-body model and machine model tests are used to confirm its robustness. The fabricated circuit has a holding voltage of 18.78 V and a second breakdown current of more than 8 A.

• 한국통신학회논문지
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• 제24권6B호
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• pp.1074-1079
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• 1999

155.52 Mbps STM-1급 디지털 통신용 고성능 CMOS 리시버 칩을 설계 제작하였다. 제작된 리시버는 전송선로의 단락 또는 송신 중단 등으로 인해 데이터신호가 입력되지 않거나, 정전 발생 또는 시스템의 유지보수 등으로 인해 전원이 차단되었다가 복구될 때에도 155.52 MHz의 클락 주파수를 유지하여 항상 안정된 동작을 할 수 있는 구조로 이루어진다. 이를 위해 설계된 회로는 PLL을 기본으로 한 데이터 및 클락 복원회로 외에 데이터 감시회로와 전원 감시회로도 내장한다. 측정 결과 제작된 IC는 데이터신호가 입력되는 정상적인 상황에서뿐만 아니라, 데이터신호가 입력되지 않는 비정상적인 상황하에서도 항상 155.52 MHz의 안정된 클락을 발생시키고 있음을 알 수 있었음, PLL 루프의 실효 지터도 23 ps로 우수한 특성을 나타내었다.

• 대한전자공학회논문지SD
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• 제37권2호
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• pp.1-4
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• 2000

공통컬렉터 잡음등가회로 해석에 기초한 베이스저항 추출방법을 제시하였다. 측정은 BiCMOS공정으로 제조되고 폴리에미터 구조를 갖는 소자에 대해서 실행 되었다. 베이스저항 측정은 서로 다른 베이스전류와 구조에 따라 수행되었다. 낮은 베이스전류에서 측정된 실험값은 이론적으로 예측된 값과 매우 잘 일치하는 결과를 얻었다

• JSTS:Journal of Semiconductor Technology and Science
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• 제14권1호
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• pp.131-137
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• 2014

A 120 GHz voltage controlled oscillator (VCO) with a divider chain including an injection locked frequency divider (ILFD) and six static frequency dividers is demonstrated using 65-nm CMOS technology. The VCO is designed based on the LC cross-coupled push-push structure and operates around 120 GHz. The 60 GHz ILFD at the first stage of the frequency divider chain is based on a similar topology as the core of the VCO to ensure the frequency alignment between the two circuit blocks. The static divider chain is composed of D-flip flops, providing a 64 division ratio. The entire circuit consumes a DC power of 68.5 mW with the chip size of $1385{\times}835{\mu}m^2$.

• Journal of electromagnetic engineering and science
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• 제4권2호
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• pp.56-62
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• 2004

We present a multi-Gbit/s digital I/O interface based on RF-modulation and capacitive-coupling over an impedance matched transmission line. The RF-interconnect(RFI) can greatly reduce the digital switching noise and eliminate the dc power dissipation over the channel. It also enables reduced signal amplitude(as low as 200 ㎷) with enhanced data rate and affordable circuit overhead. This paper addresses the system advantages and implementation issues of RFI. A prototype on-chip RFI transceiver is implemented in 0.18-${\mu}{\textrm}{m}$ CMOS. It demonstrates a maximum data rate of 2.2 Gbit/s via 10.5-㎓ RF-modulation. The RFI can be very instrumental for future high-speed inter- and intra-ULSI data links.

• 전기학회논문지
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• 제67권6호
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• pp.745-752
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• 2018

ICs(Integrated circuits) for nuclear power plant exposed to radiation environment occur malfunctions and data errors by the TID(Total ionizing dose) effects among radiation-damage phenomenons. In order to protect ICs from the TID effects, this paper proposes a radiation-hardening of the logic circuit(D-latch) which used for the data synchronization and the clock division in the ICs design. The radiation-hardening technology in the logic device(NAND) that constitutes the proposed RH(Radiation-hardened) D-latch is structurally more advantageous than the conventional technologies in that it keeps the device characteristics of the commercial process. Because of this, the unit cell based design of the RH logic device is possible, which makes it easier to design RH ICs, including digital logic circuits, and reduce the time and cost required in RH circuit design. In this paper, we design and modeling the structure of RH D-latch based on commercial $0.35{\mu}m$ CMOS process using Silvaco's TCAD 3D tool. As a result of verifying the radiation characteristics by applying the radiation-damage M&S (Modeling&Simulation) technique, we have confirmed the radiation-damage of the standard D-latch and the RH performance of the proposed D-latch by the TID effects.