• 전자공학회논문지A
• /
• 제31A권12호
• /
• pp.64-70
• /
• 1994

In this paper, we inverstigated how a parricular internal inverter circuit, which is located far from the input protection in CMOS DRAM, can be easily damaged by external ESD stress, while the protection circuit remains intact. It is shown in a mega bit DRAM that the internal circuit can be safe from ESD by simply improving the input protection circuit. An inverter, which consists of a relatively small NMOSFET and a very large PMOSFET, is used to speed up DRAMs, and the small NMOSFET is vulnerable to ESD in case that the discharge current beyond the protection flows through the inverter to Vss or Vcc power lines on chip. This internal circuit damage can not be detected by only measuring input leakage currents, but by comparing the standby and on operating current before and after ESD stressing. It was esperimentally proven that the placement of parasitic bipolar transistor between input pad and power supply is very effective for ESD immunity.

• ETRI Journal
• /
• 제28권2호
• /
• pp.175-181
• /
• 2006

A new CMOS voltage-controlled fully-differential transconductor is presented. The basic structure of the proposed transconductor is based on a four-MOS transistor cell operating in the triode or saturation region. It achieves a high linearity range of ${\pm}\;1\;V$ at a 1.5 V supply voltage. The proposed transconductor is used to realize a new fully-differential Gm-C low-pass filter with a minimum number of transconductors and grounded capacitors. PSpice simulation results for the transconductor circuit and its filter application indicating the linearity range and verifying the analytical results using $0.35\;{\mu}m$ technology are also given.

• ETRI Journal
• /
• 제33권3호
• /
• pp.462-465
• /
• 2011

A millimeter-wave (mm-wave) high-linear low-noise amplifier (LNA) is presented using a 0.18 ${\mu}m$ standard CMOS process. To improve the linearity of mm-wave LNAs, we adopted the multiple-gate transistor (MGTR) topology used in the low frequency range. By using an MGTR having a different gate-source bias at the last stage of LNAs, third-order input intercept point (IIP3) and 1-dB gain compression point ($P_{1dB}$) increase by 4.85 dBm and 4 dBm, respectively, without noise figure (NF) degradation. At 33 GHz, the proposed LNAs represent 9.5 dB gain, 7.13 dB NF, and 6.25 dBm IIP3.

• 전자공학회논문지A
• /
• 제33A권3호
• /
• pp.176-186
• /
• 1996

As the density of VLSI increases, the conventional logic testing is not sufficient to completely detect the new faults generated in design and fabrication processing. Recently, IDDQ testing becomes very attractive since it can overcome the limitations of logic testing. In this paper, G-ATPG (gyeongsang automatic test pattern genrator) is designed which is able to be adapted to IDDQ testing for combinational CMOS VLSI. In G-ATPG, stuck-at, transistor stuck-on, GOS (gate oxide short)or bridging faults which can occur within priitive gate or XOR is modelled to primitive fault patterns and the concept of a fault-sensitizing gate is used to simulate only gates that need to sensitize the faulty gate because IDDQ test does not require the process of fault propagation. Primitive fault patterns are graded to reduce CPU time for the gates in a circuit whenever a test pattern is generated. the simulation results in bench mark circuits show that CPU time and fault coverage are enhanced more than the conventional ATPG using IDDQ test.

• 대한전자공학회:학술대회논문집
• /
• 대한전자공학회 2000년도 ITC-CSCC -2
• /
• pp.1005-1008
• /
• 2000

This paper presents a simple method to estimate short-circuit power dissipation and propagation delay for static CMOS logic circuits. Short-circuit current expression is derived by accurately interpolating peak points of actual current curves which is influenced by the gate-to-drain coupling capacitance. The macro model and its expressions estimating the delay of CMOS circuits, which is based on the current modeling expression, are also proposed after investigating the voltage waveforms at transistor output modes. It is shown through simulations that the proposed technique yields better accuracy than previous methods when signal transition time and/or load capacitance decreases, which is a characteristic of the present technological evolution.

• 한국전기전자재료학회논문지
• /
• 제21권5호
• /
• pp.421-425
• /
• 2008

In this research, a 8-bit CMOS 2 stage folding A/D converter is designed, For low power consumption and small chip size, the A/D converter is designed by using folding and interpolation circuit. Folding circuit is composed of the transistor differential pairs which are connected in parallel. It reduces the number of comparator drastically. The analog block composed of folding block, current interpolation circuit, and three stage current comparator is designed with differential-mode for high speed operation. The simulation in a $0.35\;{\mu}m$ CMOS process. shows DNL and SNDR of 0.5LSB and 47 dB at 250 MHz/s sampling frequency.

• 한국정보과학회:학술대회논문집
• /
• 한국정보과학회 2004년도 가을 학술발표논문집 Vol.31 No.2 (1)
• /
• pp.556-558
• /
• 2004

최근 VLSI 설계 분야에서, 단열 논리는 에너지 효율성이 뛰어난 저전력 설계 기술 중 하나로 각광 받고 있다. 이러한 단열 논리는 기존의 저전력 회로 설계를 위해 사용되었던 CMOS 논리들을 서서히 대체해 나갈 컷으로 기대되고 있다. 하지만 않은 단열 논리들의 제시에도 불구하고, 기존의 CMOS논리들을 단열 논리로 대체하는 기법에 관한 연구는 거의 없는 실정이다. 이 논문에서는 래치형 패스 트랜지스터 단열 논리(LPAL)와 이를 이용한 저전력 설계 기법을 소개하였다. 래치형 패스 트랜지스터 단열 논리는 기존의 단열 논리들이 가지고 있는 단정을 해결하고, 보다 저전력 지향적으로 CMOS논리를 대체 할 수 있다는 장점을 가진다.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
• /
• pp.281.2-281.2
• /
• 2016

Two-dimensional van der Waals (2D vdWs) materials have been extensively studied for future electronics and materials sciences due to their unique properties. Among them, black phosphorous (BP) has shown infinite potential for various device applications because of its high mobility and direct narrow band gap (~0.3 eV). In this work, we demonstrate a few-nm thick BP-based nonvolatile memory devices with an well-known poly(vinylidenefluoride-trifluoroethylene) [P(VDF-TrFE)] ferroelectric polymer gate insulator. Our BP ferroelectric memory devices show the highest linear mobility value of $1159cm^2/Vs$ with a $10^3$ on/off current ratio in our knowledge. Moreover, we successfully fabricate the ferroelectric complementary metal-oxide-semiconductor (CMOS) memory inverter circuits, combined with an n-type $MoS_2$ nanosheet transistor. Our memory CMOS inverter circuits show clear memory properties with a high output voltage memory efficiency of 95%. We thus conclude that the results of our ferroelectric memory devices exhibit promising perspectives for the future of 2D nanoelectronics and material science. More and advanced details will be discussed in the meeting.

• 한국전기전자재료학회논문지
• /
• 제28권11호
• /
• pp.683-689
• /
• 2015

For the formation of $N^+$ doping, the antimony ions are mainly used for the fabrication of a BJT (bipolar junction transistor), CMOS (complementary metal oxide semiconductor), FET (field effect transistor) and BiCMOS (bipolar and complementary metal oxide semiconductor) process integration. Antimony is a heavy element and has relatively a low diffusion coefficient in silicon. Therefore, antimony is preferred as a candidate of ultra shallow junction for n type doping instead of arsenic implantation. Three-dimensional (3D) profiles of antimony are also compared one another from different tilt angles and incident energies under same dimensional conditions. The diffusion effect of antimony showed ORD (oxygen retarded diffusion) after thermal oxidation process. The interfacial effect of a $SiO_2/Si$ is influenced antimony diffusion and showed segregation effects during the oxidation process. The surface sputtering effect of antimony must be considered due to its heavy mass in the case of low energy and high dose conditions. The range of antimony implanted in amorphous and crystalline silicon are compared each other and its data and profiles also showed and explained after thermal annealing under inert $N_2$ gas and dry oxidation.

• ETRI Journal
• /
• 제36권1호
• /
• pp.89-98
• /
• 2014

The integration of digital circuits has a tight relation with the scaling down of silicon technology. The continuous scaling down of the feature size of CMOS devices enters the nanoscale, which results in such destructive effects as short channel effects. Consequently, efforts to replace silicon technology with efficient substitutes have been made. The carbon nanotube field-effect transistor (CNTFET) is one of the most promising replacements for this purpose because of its essential characteristics. Various digital CNTFET-based circuits, such as standard logic cells, have been designed and the results demonstrate improvements in the delay and energy consumption of these circuits. In this paper, a new CNTFET-based 5-input XOR gate based on a novel design method is proposed and simulated using the HSPICE tool based on the compact SPICE model for the CNTFET at the 32-nm technology node. The proposed method leads to improvements in performance and device count compared to the conventional CMOS-style design.