• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2001년도 하계종합학술대회 논문집(2)
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• pp.381-384
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• 2001

This paper describes the features and development of a RAM compiler that can generate low power, high speed, synchronous CMOS SRAM. The compiled SRAM can be configurable from 64bytes to 16Kbytes in one bank and has 2ns access time typically. Basic cells are developed using 2-poly, 4-metal 0.35um CMOS technology. This SRAM compiler is developed using SKIL $L^{TM}$ language and generates layout and schematic in Cadence environment.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 1999년도 추계종합학술대회 논문집
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• pp.1163-1166
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• 1999

In this paper, A CMOS power amplifier for PCS is designed with 0.65-$\mu\textrm{m}$ CMOS technology. Differential cascode structure is used which has good reverse isolation and wide voltage swing. This amplifier circuits consist of three stages which are power amplification stage, driver stage and power control stage. We obtain output power of 30 ㏈m, IMD3 of -31㏈c and efficiency of 30 % at input power of 4 ㏈m.

• 전기전자학회논문지
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• 제27권1호
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• pp.12-18
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• 2023

각각의 큐빗(qubit)을 개별적으로 상온의 제어 회로에 연결하는 현재의 회로 기술은 양자 컴퓨터의 확장성, 신뢰성을 갖추는 데 있어 한계를 가지고 있으며, 집적도 측면에서 극저온의 CMOS 기술 기반 인터커넥트 회로 기술을 통해 기존 기술 대비 인터커넥트의 복잡도, 시스템 안정도 및 사이즈, 그리고 가격 경쟁력을 획기적으로 개선할 수 있을 것으로 기대되고 있다. 외부의 전기적 자극에 민감하며 양자 상태를 일정 시간 이상 유지할 수 없는 큐빗의 특성으로 인한 문제를 극복하고, 확장성과 신뢰성을 양자 컴퓨터 실현을 위한 CMOS 기술 기반 집적화된 센싱 및 제어 회로 기술에 대해 소개한다.

• Transactions on Electrical and Electronic Materials
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• 제11권3호
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• pp.93-105
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• 2010

Complementary metal-oxide-semiconductor (CMOS) technology scaling has been a main key for continuous progress in silicon-based semiconductor industry over the past three decades. However, as the technology scaling enters nanometer regime, CMOS devices are facing many serious problems such as increased leakage currents, difficulty on increase of on-current, large parameter variations, low reliability and yield, increase in manufacturing cost, and etc. To sustain the historical improvements, various innovations in CMOS materials and device structures have been researched and introduced. In parallel with those researches, various new nanoelectronic devices, so called "Beyond CMOS Devices," are actively being investigated and researched to supplement or possibly replace ultimately scaled conventional CMOS devices. While those nanoelectronic devices offer ultra-high density system integration, they are still in a premature stage having many critical issues such as high variations and deteriorated reliability. The practical realization of those promising technologies requires extensive researches from device to system architecture level. In this paper, the current researches and challenges on nanoelectronics are reviewed and critical tasks are summarized from device level to circuit design/CAD domain to better prepare for the forthcoming technologies.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2006년도 하계종합학술대회
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• pp.505-506
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• 2006

In this paper, the linearization technique for CMOS low-noise amplifier (LNA) using the derivative superposition method through the multiple gated transistors configuration is presented. LNA based on 0.13um RF CMOS process has been implemented with a modified cascode configuration using multiple gated common source transistors to fulfill a high linearity. Compared with a conventional cascode type LNA, the third order input intercept point (IIP3) per DC power consumption (IIP3/DC) is improved by 3.85 dB. The LNA achieved 2.5-dBm IIP3 with 13.4-dB gain, 3.6 dB NF at 2.4 GHz consuming 8.56 mA from a 1.5-V supply.

• 한국정보전자통신기술학회논문지
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• 제13권1호
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• pp.27-34
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• 2020

방사선원을 이용하는 곳에는 사람의 접근이 제한되나 관측장비는 노출됨으로 방사선에 강하여야 한다. 이에따라 카메라차폐 구조설계에 필요한 물질로 비중과 용융점이 가장 높은 텅스텐과 가장 낮은 납을 선정하여 코발트 60 방사선 소스에 대한 선량을 1/8까지 감소시킬 경우 Tu는 체적 432.6cm3, 두께 2.4cm이었고, Pb는 체적 961cm3, 두께 3.6cm이었다. 이를 적용하여 CMOS Image센서를 적용한 카메라모듈 및 내방사선 차폐구조의 하우징과 방사선에 강한 CMOS카메라를 제작하였다. 최적화된 차폐두께의 선정을 위한 실험에서 생존한 헤드분리형2M AHD형 카메라(①번)를 적용한 결과 카메라 및 아답터등 연관설비에 대한 차폐가 이루어지면 1.88×106rad 이상의 선량에서도 잘 동작함을 확인하였다. 따라서 고방사선에 적용할 수 있는 카메라 기술력확보와 사업성을 기대할 수 있다.

• JSTS:Journal of Semiconductor Technology and Science
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• 제11권4호
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• pp.229-237
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• 2011

In this paper, a 60 GHz LTCC SiP with low-power CMOS OOK modulator and demodulator is presented. The 60 GHz modulator is designed in a 90-nm CMOS process. The modulator uses a current reuse technique and only consumes 14.4-mW of DC power in the on-state. The measured data rate is up to 2 Gb/s. The 60 GHz OOK demodulator is designed in a 130nm CMOS process. The demodulator consists of a gain boosting detector and a baseband amplifier, and it recovers up to 5 Gb/s while consuming low DC power of 14.7 mW. The fabricated 60 GHz modulator and demodulator are fully integrated in an LTCC SiP with 1 by 2 patch antenna. With the LTCC SiP, 648 Mb/s wireless video transmission was successfully demonstrated at wireless distance of 20-cm.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2006년 학술대회 논문집 정보 및 제어부문
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• pp.142-144
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• 2006

In this paper, the Ternary adder and multiplier are implemented by current-mode CMOS. First, we implement the ternary T-gate using current-mode CMOS which have an effective availability of integrated circuit design. Second, we implement the circuits to be realized 2-variable ternary addition table and multiplication table over finite fields GF(3) with the ternary T-gates. Finally, these operation circuits are simulated by Spice under $1.5{\mu}m$ CMOS standard technology, $1.5{\mu}m$ unit current, and 3.3V VDD voltage. The simulation results have shown the satisfying current characteristics. The ternary adder and multiplier implemented by current-mode CMOS are simple and regular for wire routing and possess the property of modularity with cell array.

• 전자공학회논문지C
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• 제34C권12호
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• pp.37-42
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• 1997

A new temperature and supply-insensitive CMOS current reference circuit was designed and tested. Te temperature insensuitivity was achieved by eliminating the mobility dependence term through the multiplication of two current components, one which is proportional to mobility and the other which is inversely proportional to mobility, by using a newly designed CMOS square root circuit. The CMOS sqare root circuit was derived from its bipolar counterpart by operating the MOS transistors in the subthreshold region. The supply insensitivity was achieved by using an internal voltage generator. Te test chip was designed ans sent out for fabrication by using a 2.mu.m double-poly double-metal n-well CMOS technology. When an external voltage source was used for the square root circuit, the maximum variation and the average temperature sensitivity were measured to be 3% and 21.4ppm/.deg.C, respectively, for the temperature range of -15~130.deg.C. The maximum current variation with supply voltage was measured to be 3% within the commerical supply voltage range of 4.5~5.5V at 30.deg. C.

• 한국컴퓨터정보학회논문지
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• 제5권3호
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• pp.76-83
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• 2000

CMOS기술의 발전에 의해 연속신호시스템은 상당한 발전을 가져왔다. 이 논문에서는 새로운 CMOS floating저항을 써서 저역통과필터를 설계하고 PSpice Simulation을 통하여 그 특성이 우수함을 입증하였다. 특히, CMOS로 구성되는 새로운 floating저항은 포화영역에서 동작하도록 구현하였다. 이 방법으로 설계된 저역통과필터는 SC필터보다 구조가 더 간단하므로 IC화 할 때 칩 면적을 감소시킬 수 있다.