• Journal of the Korean earth science society
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• v.34 no.6
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• pp.588-601
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• 2013

In geophysics and geophysical exploration fields, we can use information about inclination and azimuth in various ways. These include borehole deviation logging for inversion process, real-time data acquisition system, geophysical monitoring system, and so on. This type of information is also necessarily used in the directional drilling of shale gas fields. We thus need to develop a subminiature, low-powered, multi-functional inclination and azimuth measurement system for geophysical exploration fields. In this paper, to develop real-time measurement system, we adopt the high performance low power Micro Control Unit (made with state-of-the-art Complementary Metal Oxide Semiconductor technology) and newly released Micro Electro Mechanical Systems Attitude Heading Reference System sensors. We present test results on the development of a multifunctional real-time inclination and azimuth measurement system. The developed system has an ultra-slim body so as to be installed in 42mm sonde. Also, this system allows us to acquire data in real-time and to easily expand its application by synchronizing with a depth encoder or Differential Global Positioning System.

• Korean Journal of Materials Research
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• v.10 no.12
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• pp.812-818
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• 2000

We studied the effects of Ge preamorphization (PAM) on 0.25$\mu\textrm{m}$ Ti-salicide junctions using comparative study with As PAM. For each PAM schemes, ion implantations are performed at a dose of 2E14 ion/$\textrm{cm}^2$ and at 20keV energy using $^{75}$ /As+and GeF4 ion sources. Ge PAM showed better sheet resistance and within- wafer uniformity than those of As PAM at 0.257m line width of n +/p-well junctions. This attributes to enhanced C54-silicidation reaction and strong (040) preferred orientation of the C54-silicide due to minimized As presence at n+ junctions. At p+ junctions, comparable performance was obtained in Rs reduction at fine lines from both As and Ge PAM schemes. Junction leakage current (JLC) revels are below ~1E-14 A/$\mu\textrm{m}^{2}$ at area patterns for all process conditions, whereas no degradation in JLC is shown under Ge PAM condition even at edge- intensive patterns. Smooth $TiSi_2$ interface is observed by cross- section TEM (X- TEM), which supports minimized silicide agglomeration due to Ge PAM and low level of JLC. Both junction break- down voltage (JBV) and contact resistances are satisfactory at all process conditions.

• Fire Science and Engineering
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• v.26 no.1
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• pp.74-79
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• 2012

This study is described for development of the stand-alone smoke and heat detector (SASHD) according to the revised in 2011 type approval and performance inspection code for detector. The main improvement of the revised regulation is source. CMOS microcontroller with nano watt technology is use for development of the workable SASHD over 10 years. The low-power SASHD is developed by using the power-saving sleep mode of microcontroller, by making the low-power source voltage checker, heat detector and smoke detector. The stand-alone detector is developed by smoke and heat detector type for reduce false fire alarm. User can choose type of work between the heat detection mode and smoke & heat detection mode. The SASHD can communicate with each them using RS-485 communication supported from microcontroller. So, this study can develop the SASHD that is able to alarm more wide area when fire occurs and reduce a flash fire alarm.

• ETRI Journal
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• v.42 no.4
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• pp.596-607
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• 2020

Scaling is an important operation because of the iterative nature of arithmetic processes in digital signal processors (DSPs). In residue number system (RNS)-based DSPs, scaling represents a performance bottleneck based on the complexity of intermodulo operations. To design an efficient RNS scaler for special moduli sets, a body of literature has been dedicated to the study of the well-known moduli sets {2ⁿ - 1, 2ⁿ, 2ⁿ + 1} and {2ⁿ, 2ⁿ - 1, 2ⁿ⁺¹ - 1}, and their extension in vertical or horizontal forms. In this study, we propose an efficient programmable RNS scaler for the arithmetic-friendly moduli set {2^n+p, 2ⁿ - 1, 2ⁿ⁺¹ - 1}. The proposed algorithm yields high speed and energy-efficient realization of an RNS programmable scaler based on the effective exploitation of the mixed-radix representation, parallelism, and a hardware sharing technique. Experimental results obtained for a 130 nm CMOS ASIC technology demonstrate the superiority of the proposed programmable scaler compared to the only available and highly effective hybrid programmable scaler for an identical moduli set. The proposed scaler provides 43.28% less power consumption, 33.27% faster execution, and 28.55% more area saving on average compared to the hybrid programmable scaler.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.42 no.12
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• pp.1-8
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• 2005

The gate length-dependence of cutoff frequency is modeled by using scaling parameter equations of equivalent circuit parameters extracted from measured S-parameters of Nano-scale MOSFETs. It is observed that the modeled cutoff frequency initially increases with decreasing gate length and then the rate of increase becomes degraded at further scale-down. This is because the extrinsic charging time slightly decreases, although the intrinsic transit time greatly decreases with gate length reduction. The new gate length-dependent model will be very helpful to optimize RF performances of Nano-scale MOSFETs.

• Proceedings of the IEEK Conference
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• 2004.06b
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• pp.391-394
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• 2004

In this study, highly thermal stable Ni Germanosilicide has been utilized using NiPt alloy and novel NiPt/Co/TiN tri-layer. And, the Ni Germanosilicide Properties were characterized according to different Ge ratio (x) in $Si_{l-x}Ge_x$ for the next generation CMOS application. The sheet resistance of Ni Germanosilicide utilizing pure-Ni increased dramatically after the post-silicidation annealing at $600^{\circ}C$ for 30 min. Moreover, more degradation was found as the Ge fraction increases. However, using the proposed NiPt/Co/TiN tri-layer, low temperature silicidation and wide range of RTP process window were achieved as well as the improvement of the thermal stability according to different Ge fractions by the subsequent Co and TiN capping layer above NiPt on the $Si_{l-x}Ge_x$. Therefore, highly thermal immune Ni Germanosilicide up to $600^{\circ}C$ for 30 min is utilized using the NiPt/Co/TiN tri-layer promising for future SiGe based ULSI technology.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.46 no.1
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• pp.76-84
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• 2009

This paper proposes a SOC platform which is eligible for education and application SOC design. The platform, fully synthesizable and reconfigurable, includes the OpenRISC embedded processor, some basic peripherals such as GPIO, UART, debug interlace, VGA controller and WISHBONE interconnect. The platform uses a set of development environment such as compiler, assembler, debugger and RTOS that is built for HW/SW system debugging and software development. Designed SOC, IPs and Testbenches are described in the Verilog HDL and verified using commercial logic simulator, GNU SW development tool kits and the FPGA. Finally, a multimedia SOC derived from the SOC platform is implemented to ASIC using the Magnachip cell library based on 0.18um 1-poly 6-metal technology.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.11
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• pp.44-49
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• 2008

We have proposed a clock recovery circuit for 13.56MHz RFID Tags using 100%, ASK RF input signal. The proposed clock recovery circuit generates clock pulses without reference clock by adapting register controlled DLL. The proposed circuit have designed by using a TSMC 0.18um 1P6M CMOS technology. The simulated results show that the phase locking time of the proposed circuit is about 6.4 usec and power consumption is about 43uW at supply voltage of 3.3V.

• JSTS:Journal of Semiconductor Technology and Science
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• v.17 no.3
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• pp.411-424
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• 2017

An all-digital delay-locked loop (DLL) for a mobile memory interface, which runs at 0.11-2.5 GHz with a phase-shift capability of $180^{\circ}$, has two internal DLLs: a global DLL which uses a time-to-digital converter to assist fast locking, and shuts down after locking to save power; and a local DLL which uses a phase detector with an adaptive phase sampling window (WPD) to reduce jitter accumulation. The WPD in the local DLL adjusts the width of its sampling window adaptively to control the loop bandwidth, thus reducing jitter induced by UP/DN dithering, input clock jitter, and supply/ground noise. Implemented in a 65 nm CMOS process, the DLL operates over 0.11-2.5 GHz. It locks within 6 clock cycles at 0.11 GHz, and within 17 clock cycles at 2.5 GHz. At 2.5 GHz, the integrated jitter is $954fs_{rms}$, and the long-term jitter is $2.33ps_{rms}/23.10ps_{pp}$. The ratio of the RMS jitter at the output to that at the input is about 1.17 at 2.5 GHz, when the sampling window of the WPD is being adjusted adaptively. The DLL consumes 1.77 mW/GHz and occupies $0.075mm^2$.

• Journal of the Korean Society for Precision Engineering
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• v.27 no.1
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• pp.125-133
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• 2010

A versatile micro-robotic platform for micro/nano scale assembly has been demanded in a variety of application areas such as micro-biology and nanotechnology. In the near future, a flexible and compact platform could be effectively used in a scanning electron microscope chamber. We are developing a platform that consists of miniature mobile robots and a compact positioning stage with multi degree-of-freedom. This paper presents the design and the implementation of a low-cost and compact multi degree of freedom position sensor that is capable of measuring absolute translational and rotational displacement. The proposed sensor is implemented by using a CMOS type image sensor and a target with specific hole patterns. Experimental design based on statistics was applied to finding optimal design of the target. Efficient algorithms for image processing and absolute position decoding are discussed. Simple calibration to eliminate the influence of inaccuracy of the fabricated target on the measuring performance also presented. The developed sensor was characterized by using a laser interferometer. It can be concluded that the sensor system has submicron resolution and accuracy of ${\pm}4{\mu}m$ over full travel range. The proposed vision-based sensor is cost-effective and used as a compact feedback device for implementation of a micro robotic platform.