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Gate-Length Dependent Cutoff Frequency Extraction for Nano-Scale MOSFET  

Kim, Joung-Hyck (School of Electronics and Information Engineering, Hankuk University of Foreign Studies)
Lee, Yong-Taek (School of Electronics and Information Engineering, Hankuk University of Foreign Studies)
Choi, Mun-Sung (School of Electronics and Information Engineering, Hankuk University of Foreign Studies)
Ku, Ja-Nam (Samsung Advanced Institute of Technology)
Lee, Seong-Heam (School of Electronics and Information Engineering, Hankuk University of Foreign Studies)
Publication Information
Journal of the Institute of Electronics Engineers of Korea SD / v.42, no.12, 2005 , pp. 1-8 More about this Journal
Abstract
The gate length-dependence of cutoff frequency is modeled by using scaling parameter equations of equivalent circuit parameters extracted from measured S-parameters of Nano-scale MOSFETs. It is observed that the modeled cutoff frequency initially increases with decreasing gate length and then the rate of increase becomes degraded at further scale-down. This is because the extrinsic charging time slightly decreases, although the intrinsic transit time greatly decreases with gate length reduction. The new gate length-dependent model will be very helpful to optimize RF performances of Nano-scale MOSFETs.
Keywords
RF CMOS; MOSFET; modeling; parameter extraction; cutoff frequency;
Citations & Related Records
Times Cited By KSCI : 1  (Citation Analysis)
연도 인용수 순위
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