• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2005년도 추계종합학술대회
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• pp.829-832
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• 2005

This paper describes a wide-range dual-loop Delay Locked Loop (DLL) using Voltage Controlled Delay Line (VCDL) based on Transmission Gate(TG) inverters. One loop is used when the minimum VCDL delay is greater than a half of $T_{REF}$, the reference clock period. The other loop is initiated when the minimum delay is less than $0.5{\times}T_{REF}$. The proposed VCDL improves the dynamic operation range of a DLL. The DLL with a VCDL of 10 TG inverters provides a lock range from 70MHz to 700MHz when designed using $0.18{\mu}m$ CMOS technology with 1.8 supply voltage. The DLL consumes 11.5mW for locking operation with a 700MHz reference clock. The proposed DLL can be used for high-speed memory devices and processors, communication systems, high-performance display interfaces, etc.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.523-526
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• 2001

In this paper, we design and fabricate the high-efficiency and low-power switched-capacitor DC-DC converter. This converter consists of internal oscillator, output driver and output switches. The internal oscillator has 100kHz oscillation frequency and the output switches composed of one pMOS transistor and three nMOS transistors. According to the configuration of two external capacitors, the converter has three functions that are the Inverter, Doubler and Divider. The proposed converter is fabricated through the 0.8$\mu\textrm{m}$ 2-poly, 2-metal CMOS process. The simulation and experimental result for fabricated IC show that the proposed converter has the voltage conversion efficiency of 98% and power efficiency more than 95%.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 1998년도 하계종합학술대회논문집
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• pp.534-537
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• 1998

In this paper, a set of novel self-timed latches are introduced and analyzed. These latches have no back-to-back connection as in conventional self-timed latch, and both inverting and noninerting outputs are evaluated simultaneously leading to thigher oepating frequencies. Power consumption of these latches ar ealso comparable to or less than that of conventional circuits. Novel type of cross-coupled inverter used in the proosed circuits implements static operatin without signal fighting with the main driver during signal transition. Proposed latches ar tested using a 0.6.mu.m triple-poly triple-metal n-well CMOS technology. The resutls indicates that proposed active-low sefl-timed latch (ALSTL) improves speed by 14-34% over conventional NAND SR latch, while in active-high self-timed latch (AHSTL) the improvements are 15-35% with less power as compared with corresponding NORA SR latch. These novel latches have been successfully implemented in a high-speed synchronous DRAM (SDRAM).

• JSTS:Journal of Semiconductor Technology and Science
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• 제14권2호
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• pp.198-201
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• 2014

The phase frequency detector (PFD) is one of the most important building blocks of a phase locked Loop (PLL). Due to blind-zone problem, the detection range of the PFD is low. The blind zone of a PFD directly depends upon the reset time of the PFD and the pre-charge time of the internal nodes of the PFD. Taking these two parameters into consideration, a PFD is designed to achieve a small blind zone closer to the limit imposed by process-voltage-temperature variations. In this paper an enhanced architecture is proposed for dynamic logic PFD to minimize the blind-zone problem. The techniques used are inverter sizing, transistor reordering and use of pre-charge transistors. The PFD is implemented in 180 nm technology with supply voltage of 1.8 V.

• 대한전자공학회논문지
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• 제25권6호
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• pp.700-709
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• 1988

A new technique is proposed for switch-level logic simulation for NMOS and CMOS logic circuits. For the simple inverter the rise or fall delay time is approximated by a product of polynomials of the input waveform slope, the output loading capacitance and the device configuration ratio, the polynomial coefficients being so determined as to best fit the SPICE simuladtion results for a given fabrication process. This approach can easily and accurately be extened to the case of multiple input transitions. The simulation results show that proposed method can predict the delay times within 5% error and with a speed up by a factor of three orders of magnitude for several circuits tested, as compared with the SPICE simulation.

• JSTS:Journal of Semiconductor Technology and Science
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• 제8권3호
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• pp.227-231
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• 2008

A latchup-free design based on the lateral diffused MOS (LDMOS) adopting the "Darlington" approaches was designed. The use of Darlington configuration as the trigger circuit results in the reduction of the size of the circuit when compared to the conventional inverter driven RC-triggered MOSFET ESD power clamp circuits. The proposed clamp was fabricated using a $0.35{\mu}m$ 60V BCD (Bipolar CMOS DMOS) process and the performance of the proposed clamp was successfully verified by TLP (Transmission Line Pulsing) measurements.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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• pp.67-70
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• 2009

Printed electronics are emerging technology to realize various microelectronic devices via a cost-effective method. Here we introduce high performance inkjet printed polymer field-effect transistors and application to complementary integrated circuits with p-type and n-type conjugated polymers. The performance of devices highly depends on the selection of dielectrics, printing condition and device architecture. The device optimization and performances of various integrated circuits, e.g., complementary inverters and ring oscillators will be mainly discussed in this talk.

• 한국전기전자재료학회논문지
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• 제17권2호
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• pp.144-149
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• 2004

Register Controlled DLL with fast locking and low-power consumption, is described in this paper. Delay monitor scheme is proposed to achieve the fast locking and inverter is inserted in front of delay line to reduce the power consumption, also. Proposed DLL was fabricated in a 0.6${\mu}{\textrm}{m}$ 1-poly 3-metal CMOS technology. The proposed delay monitor scheme enables the DLL to lock to the external clock within 4 cycles. The power consumption is 36㎽ with 3V supply voltage at 34MHz clock frequency.

• ETRI Journal
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• 제43권5호
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• pp.900-908
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• 2021

This paper proposes thermometer-code latches having five and six transistors for unidirectional and bidirectional thermometer-code shift-registers, respectively. The proposed latches omit the set and reset transistors by changing from two supply voltage nodes to the set and reset signals in the cross-coupled inverter. They set or reset the data by changing the supply voltage to ground in either of two inverters. They reduce the number of transistors to five and six compared with the conventional thermometer-code latches having six and eight transistors, respectively. The proposed thermometer-code latches were simulated using a 65 nm complementary metal-oxide-semiconductor (CMOS) process. For comparison, the proposed and conventional latches are adapted to the 64 bit thermometer-code shift-registers. The proposed unidirectional and bidirectional shift-registers occupy 140 ㎛² and 197 ㎛², respectively. Their consumption powers are 4.6 ㎼ and 5.3 ㎼ at a 100 MHz clock frequency with the supply voltage of 1.2 V. They decrease the areas by 16% and 13% compared with the conventional thermometer-code shift-register.

• 대한전자공학회논문지SD
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• 제47권5호
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• pp.87-93
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• 2010

본 논문에서는 디지털 위상동기루프에서 사용하는 고해상도와 넓은 입력 범위를 가지는 2 단계 시간-디지털 변환기(TDC)구조를 제안한다. 디지털 위상동기루프에서 디지털 오실레이터의 출력 주파수와 기준 주파수와의 위상 차이를 비교하는데 사용하는 TDC는 고해상도로 구현되어야 위상고정루프의 잡음 특성을 좋게 한다. 기존의 TDC의 구조는 인버터로 구성된 지연 라인으로 이루어져 있어 그 해상도는 지연 라인을 구성하는 인버터의 지연 시간에 의해 결정되며, 이는 트랜지스터의 크기에 의해 결정된다. 따라서 특정 공정상에서 TDC의 해상도는 어느 값 이상으로 높일 수 없는 문제점이 있다. 본 논문에서는 인버터보다 작은 값의 지연 시간을 구현하기 위해 위상-인터폴레이션 기법을 사용하였으며, 시간 증폭기를 사용하여 작은 지연 시간을 큰 값으로 증폭하여 다시 TDC에 입력하는 2 단계로 구성하여 고해상도의 TDC를 설계하였다. 시간 증폭기의 이득에 영향을 주는 두 입력의 시간 차이를 작은 값으로 구현하기 위해 지연 시간이 다른 두 인버터의 차이를 이용하여 매우 작은 값의 시간 차이를 구현하여 시간증폭기의 성능을 높였다. 제안하는 TDC는 $0.13{\mu}m$ CMOS 공정으로 설계 되었으며 전체 면적은 $800{\mu}m{\times}850{\mu}m$이다. 1.2 V의 공급전압에서 12 mA의 전류를 사용하며 0.357 ps의 해상도와 200 ps의 입력 범위를 가진다.