• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.396-399
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• 2003

In this paper, the purpose is to develop imaging technique of synchrotron radiation using CMOS image sensor. The detector using hybrid method to be research in this lab was used, in order to increase image signal. We made experiments with 1B2 Whitebeam/microprobe beamline in PAL (Pohang Accelerator Laboratory). Phosphor materials such as ZnS:(Ag,Li), ZnS:(Cu,Al), $Y_2O_2S:Eu$ were produced by spin coating on glass. Synchrotron radiation images were acquired and evaluated from monochromatic light from monochromoator in PAL 1B2line. From obtained object and phantom, MTF was 0.15 in ZnS:(Ag,Li) phosphor, and 0.178 in ZnS:( Cu,Al) at 151p/mm. MTFs were unsystematic because thickness of phosphor and uniformity of surface were not optimized. It's expected to improve MTF and the qualify of images as uniformity's optimized.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.11 no.2
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• pp.322-329
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• 2007

A single pixel photon counting type image sensor which is applicable for medical diagnosis with digitally obtained image and industrial purpose has been designed with $0.18{\mu}m$ triple-well CMOS process. The designed single pixel for readout chip is able to be operated by single supply voltage to simplify digital X-ray image sensor module and a preamplifier which is consist of folded cascode CMOS operational amplifier has been designed to enlarge signal voltage(${\Delta}Vs$), the output voltage of preamplifier. And an externally tunable threshold voltage generator circuit which generates threshold voltage in the readout chip has been newly proposed against the conventional external threshold voltage supply. In addition, A dark current compensation circuit for reducing dark current noise from photo diode is proposed and 15bit LFSR(Linear Feedback Shift Resister) Counter which is able to have high counting frequency and small layout area is designed.

• Journal of Sensor Science and Technology
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• v.28 no.2
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• pp.71-75
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• 2019

This paper proposes the extension of the dynamic range in complementary metal oxide semiconductor (CMOS) image sensors (CIS) using switching operation of in-pixel inverter. A CMOS inverter is integrated in each unit pixel of the proposed CIS for switching operations. The n+/p-substrate photodiode junction capacitances are added to each unit pixel. When the output voltage of the photodiode is less than half of the power supply voltage of the CMOS inverter, the output voltage of the CMOS inverter changes from 0 V to the power supply voltage. Hence, the output voltage of the CMOS inverter is adjusted by changing the supply voltage of the CMOS inverter. Thus, the switching point is adjusted according to light intensity when the supply voltage of the CMOS inverter changes. Switching operations are then performed because the CMOS inverter is integrated with in each unit pixel. The proposed CIS is composed of a pixel array, multiplexers, shift registers, and biasing circuits. The size of the proposed pixel is $10{\mu}m{\times}10{\mu}m$. The number of pixels is $150(H){\times}220(V)$. The proposed CIS was fabricated using a $0.18{\mu}m$ 1-poly 6-metal CMOS standard process and its characteristics were experimentally analyzed.

• Journal of Sensor Science and Technology
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• v.18 no.3
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• pp.190-196
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• 2009

In a conventional camera system, a target tracking system consists of a camera part and a image processing part. However, in the field of the real time image processing, the vision chip for edge detection which was made by imitating the algorithm of humanis retina is superior to the conventional digital image processing systems because the human retina uses the parallel information processing method. In this paper, we present a high speed target tracking system using the function of the CMOS vision chip for edge detection.

• Proceedings of the KIEE Conference
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• 2003.11c
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• pp.653-656
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• 2003

We have designed embedded web sewer system and ported Linux operating system version 2.4.5 at our system. And then We implemented to control and monitor widely separated hardware and implemented to monitor widely separated image using CMOS image sensor HV7131B. Web server is the Boa web server with General Public License. We designed for this system using of Intel's SA1110 ARM core base processor and connecting input and output device at GPIO port of SA1110. Device driver of General purpose I/O for Embedded Linux OS is designed. And then the application program controlling driver is implemented to use of common gate interface C language. User is available to control and monitor at client PC. This method have benefit to reduce the Expenditure of hardware design and development time against PC base system and have various and capacious application against firmware base system.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2009.05a
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• pp.631-634
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• 2009

Recent advances in wireless communication, electronics, MEMS device, sensor and battery technology have made it possible to manufacture low-cost, low-power, multi-function tiny sensor nodes. A large number of tiny sensor nodes form sensor network through wireless communication. Sensor networks represent a significant improvement over traditional sensors, research on Zigbee wireless image transmission has been a topic in industrial and scientific fields. In this paper, we design a Zigbee wireless image sensor node and multimedia monitoring server system. It consists of embedded processor, memory, CMOS image sensor, image acquisition and processing unit, Zigbee RF module, power supply unit and remote monitoring server system. In the future, we will further improve our Zigbee wireless image sensor node and monitoring server system. Besides, energy-efficient Zigbee wireless image transmission protocol and interworking with mobile network will be our work focus.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.9 no.6
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• pp.553-558
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• 2016

A DC-DC converter for CMOS image sensors in bio-sensor chips is proposed. The DC-DC converter generates a PCP voltage, that is an on voltage of a pixel, and an NCP voltage, that is an off voltage of a pixel. The PCP voltage with a ripple voltage of within 1.33V is obtained from a positive charge pump of VPP (=5V) with a ripple voltage of 45.35 by using a regulator. Also, the NCP voltage with a ripple voltage of 0.05mV is obtained from a negative charge pump of VNN (=-2V) with a ripple voltage of 62.8 by using a regulator.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.16 no.6
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• pp.4021-4030
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• 2015

Pulse wave is the physiological responses through the autonomic nervous system such as ECG. It is relatively convenient because it can measure the signal just by applying a sensor on a finger. So, it can be usefully employed in the field of U-Healthcare. The objects of this study are acquiring the PPG (Photoplethysmography) one of the way of measuring the pulse waves in non-invasive way using the CMOS image sensor on a smartphone camera, developing the portable system judging stressful or not, and confirming the applicability in the field of u-Healthcare. PPG was acquired by using image data from smartphone camera without separate sensors and analyzed. Also, with that image signal data, HRV (Heart Rate Variability) and stress index were offered users by just using smartphone without separate host equipment. In addition, the reliability and accuracy of acquired data were improved by developing additional hardware device. From these experiments, we can confirm that measuring heart rate through the PPG, and the stress index for analysis the stress degree using the image of a smartphone camera are possible. In this study, we used a smartphone camera, not commercialized product or standardized sensor, so it has low resolution than those of using commercialized external sensor. However, despite this disadvantage, it can be usefully employed as the u-Healthcare device because it can obtain the promising data by developing additional external device for improvement reliability of result and optimization algorithm.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.47 no.1
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• pp.52-59
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• 2010

This paper proposes a high-resolution and high-frame rate CMOS image sensor with column-wise cyclic ADC. The proposed ADC uses the sharing techniques of OTAs and capacitors for low-power consumption and small silicon area. The proposed ADC was verified implementing the prototype chip as QVGA image sensor. The measured maximum frame rate is 120 fps, and the power consumption is 130 mW. The power supply is 3.3 V, and the die size is $4.8\;mm\;{\times}\;3.5\;mm$. The prototype chip was fabricated in a 2-poly 3-metal $0.35-{\mu}m$ CMOS process.

• Journal of Sensor Science and Technology
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• v.18 no.6
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• pp.475-484
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• 2009

In this paper, an analysis of the complementary CMOS active pixel and readout circuit is carried out. Complementary pixel structure which is different from conventional 3TR APS structure consists of photo diode, reset PMOS, several NMOSs and PMOSs sets for complementary signals. Proposed CMOS image sensors pixel has been fabricated using 0.5 standard CMOS process. Measured results show that the output signal range is from 0.8 V to 3.8 V. This output signal range increased 125 % compared to conventional 3TR pixel in the condition of 5 V power supply.