• Journal of the Korea Institute of Information and Communication Engineering
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• v.20 no.1
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• pp.110-116
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• 2016

This paper describes 1.2-V 5-Gb/s scalable low voltage signaling(SLVS) differential transmitter(TX) with a digital impedance calibration and equalizer. The proposed transmitter consists of a phase-locked loop(PLL) with 4-phase output clock, a 4-to-1 serializer, a regulator, an output driver, and an equalizer driver for improvement of the signal integrity. A pseudo random bit sequence generator is implemented for a built-in self-test. The proposed SLVS transmitter provides the output differential swing level from 80mV to 500mV. The proposed SLVS transmitter is implemented by using a 65-nm CMOS with a 1.2-V supply. The measured peak-to-peak time jitter of the implemented SLVS TX is about 46.67 ps at the data rate of 5Gb/s. Its power consumption is 1.88 mW/Gb/s.

• Journal of information and communication convergence engineering
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• v.10 no.1
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• pp.85-90
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• 2012

A 40-MS/sec 10-bit pipelined analog to digital converter (ADC) with a 1.2 Vpp differential input signal is proposed. The implemented pipelined ADC consists of eight stages of 1.5 bit/stage, one stage of 2 bit/stage, a digital error correction block, band-gap reference circuit & reference driver, and clock generator. The 1.5 bit/stage consists of a sub-ADC, digital to analog (DAC), and gain stage, and the 2.0 bit/stage consists of only a 2-bit sub-ADC. A bootstrapped switch with a constant resistance is proposed to improve the linearity of the input switch. It reduces the maximum VGS variation of the conventional bootstrapped switch by 67%. The proposed bootstrapped switch is used in the first 1.5 bit/stage instead of a sample-hold amplifier (SHA). This results in the reduction of the hardware and power consumption. It also increases the input bandwidth and dynamic performance. A reference voltage for the ADC is driven by using an on-chip reference driver without an external reference. A digital error correction with a redundancy is also used to compensate for analog noise such as an input offset voltage of a comparator and a gain error of a gain stage. The proposed pipelined ADC is implemented by using a 0.18-${\mu}m$ 1- poly 5-metal CMOS process with a 1.8 V supply. The total area including a power decoupling capacitor and the power consumption are 0.95 $mm^2$ and 51.5 mW, respectively. The signal-to-noise and distortion ratio (SNDR) is 56.15 dB at the Nyquist frequency, resulting in an effective number of bits (ENOB) of 9.03 bits.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.1
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• pp.59-67
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• 2007

This paper presents a low power dual-level low voltage differential signaling (DLVDS) technique using current source switching for LCD driver ICs in portable products. The transmitter makes dual level signal that has two different level signal 400mVpp and 250mVpp while keeping the advantages of LVDS. The decoding circuit recovers the primary signal from DLVDS. The low power DLVDS is implemented using a $0.25{\mu}m$ CMOS process under 2.5V supply. The proposed circuit shows 800Mbps/2-line data rate and 9mW, 11.5mW power consumptions in transmitter and receiver, respectively. The proposed DLVDS scheme reduce power consumption dramatically compare with conventional one.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.46 no.11
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• pp.84-91
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• 2009

A high speed serial link transmitter using multi-level signaling is proposed. To achieve high data rate m high speed serial link, 4-pulse amplitude modulation (PAM) is used. By transmitting 2 bit data in each symbol time, high speed data transmission, two times than binary signaling, is achieved. The transmitter transmits current-mode output instead of voltage-mode output Current-mode output is much faster than voltage-mode output, so higher data transmission is available by increasing switching speed of driver. $2^5-1$ pseudo-random bit sequence (PRBS) generator is contained to perform built-in self test (BIST). The 4-PAM transmitter is designed in Dongbu HiTek $0.18{\mu}m$ CMOS technology and achieves 8 Gb/s, 160 mV of eye height with 1.8 V supply voltage. The transmitter consumes only 98 mW for 8 Gb/s transmission.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.7
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• pp.17-22
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• 2008

This paper presents a low-power and small-area pulse width modulator by light intensity for photoflash. Light intensity controller is achieved by using capacitor, photodiode, and comparator. The proposed circuit designs digital circuit to reduce static power consumption except comparator. And IGBT driver has short circuit protection using delay cell. The pulse width modulator has the operating range of $V_{MS}$ from 0.5V to 2.5V and pulse width of output from 0.14ms to 1.65ms at 300Hz. The pulse width modulator fabricated in $0.35-{\mu}m$ CMOS technology occupies $0.85mm{\times}0.56mm$. This circuit consumes 3.0mW at 300Hz and 3.0V.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.42 no.8 s.338
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• pp.1-6
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• 2005

A dual-level low voltage differential signalling (DLVDS) circuit is proposed aiming at reducing transmission lines for LCD driver IC. In the proposed circuit, we apply a couple of primitive data to DLVDS circuit as inputs. The transmitter converts two inputs to two kinds of fully differential level signals. In this circuit, two transmission lines are sufficient to transfer two primitive inputs while keeping the LVDS feature. The receiver recovers The original input data through a level decoding circuit. We fabricated the proposed circuit using $0.25\mu m$ CMOS technology. The resultant circuit shows 1-Gbps/2-line data rate and 35-mW power consumption at 2.5V supply voltage, respectively.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2013.10a
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• pp.361-364
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• 2013

Since the non-overlapping gate driver used in conventional DC-DC boost converters generates fixed dead-times, the converters suffer from the body-diode conduction loss or the charge-sharing loss. A adaptive control method has been proposed to reduce these loses. In this method, however, occurrence of and overlapping time of two power transistors in CCM results in reduction of efficiency. In this paper, to overcome this problem a new adaptive control method in proposed, and a DC-DC boost converter with the proposed adaptive control and power switching has been designed in a 0.35um CMOS process. The designed converter outputs 3.3V from a input voltage of 2.5V. The switching frequency is 500kHz and the maximum power efficiency is 95.3% at a load current 150mA. The designed chip area is $1720um{\times}1280um$.

• Journal of the Korean Institute of Telematics and Electronics C
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• v.36C no.7
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• pp.10-16
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• 1999

This paper describes a low voltage swing bus driver using FCSR(Feedback Control Swing voltage Reduction) which can control bus swing voltage within a few hundred of mV. It is proposed to reduce power consumption in On-chip interface, especially for MDL(Merged DRAM Logic) architecture wihich has wide and large capacitance bus. FCSR operates on differential signal dual-line bus and on precharged bus with block controlling fuction. We modeled driver and bus to scale driver size automatically when bus environment is variant. We also modeled coupling capacitance noise(crosstalk) of neighborhood lines which operate on odd mode with parallel current source to analysis crosstalk effect in the victim-line according as voltage transition in the aggressor-line and environment in the victim-line. We built a test chip which was designed to swing 600mV in bus, shows 70Mhz operation at 3.3V, using Hyundai 0.8um CMOS technology. FCSR operate with 250Mhz at 3.3V by Hspice simulation.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.1005-1008
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• 2007

In this study, an architecture for 262K-color TFT-LCD source driver. In this paper proposed the chip consumes smaller area and static current which is suitable for QVGA resolutions. In the conventional structures, all of them need large number of OPAMP buffers to drive the pixels, Therefore, highly resistive R-DACs are needed to generate gamma voltages to reduce the static current. In this study, our design only used two OPAMPs and low resistance RDACs without increasing the quiescent current. Thus, it was experted that chip would be more in consuming lower static power for longer battery lifetime. The source driver were implemented by the 3.3 V $0.35\;{\mu}m$ CMOS technology provided by TSMC. The area of the core OPAMP circuit was about $110\;{\mu}m\;{\times}\;150\;{\mu}m$ and that of the source driver was $880\;{\mu}m\;{\times}\;430\;{\mu}m$. As compared to the conventional structure, approximately 64.48 % in area was achieved.

• ETRI Journal
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• v.36 no.6
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• pp.924-930
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• 2014

This paper presents a $0.13{\mu}m$ CMOS 3-level envelope delta-sigma modulation (EDSM) RF signal generator, which synthesizes a 2.6 GHz-centered fully symmetrical 3-level EDSM signal for high-efficiency power amplifier architectures. It consists of an I-Q phase modulator, a Class B wideband buffer, an up-conversion mixer, a D2S, and a Class AB wideband drive amplifier. To preserve fast phase transition in the 3-state envelope level, the wideband buffer has an RLC load and the driver amplifier uses a second-order BPF as its load to provide enough bandwidth. To achieve an accurate 3-state envelope level in the up-mixer output, the LO bias level is optimized. The I-Q phase modulator adopts a modified quadrature passive mixer topology and mitigates the I-Q crosstalk problem using a 50% duty cycle in LO clocks. The fabricated chip provides an average output power of -1.5 dBm and an error vector magnitude (EVM) of 3.89% for 3GPP LTE 64 QAM input signals with a channel bandwidth of 10/20 MHz, as well as consuming 60 mW for both channels from a 1.2 V/2.5 V supply voltage.