• Journal of IKEEE
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• v.7 no.2 s.13
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• pp.236-244
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• 2003

In this paper, RF and IF circuits for mobile terminals which have usually been implemented using expensive BiCMOS processes are designed using CMOS circuits, and a Tx CMOS RF/IF single chip for PCS applications is designed. The designed circuit consists of an IF block including an IF PLL frequency synthesizer, an IF mixer, and a VGA and an RF block including a SSB RF mixer and a driver amplifier, and performs all transmit signal processing functions required between digital baseband and the power amplifier. The phase noise level of the designed IF PLL frequency synthesizer is -114dBc/Hz@100kHz and the lock time is less than $300{\mu}s$. It consumes 5.3mA from a 3V power supply. The conversion gain and OIP3 of the IF mixer block are 3.6dB and -11.3dBm. It consumes 5.3mA. The 3dB frequencies of the VGA are greater than 250MHz for all gain settings. The designed VGA consumes 10mA. The designed RF block exhibits a gain of 14.93dB and an OIP3 of 6.97dBm. The image and carrier suppressions are 35dBc and 31dBc, respectively. It consumes 63.4mA. The designed circuits are under fabrication using a $0.35{\mu}m$ CMOS process. The designed entire chip consumes 84mA from a 3V supply, and its area is $1.6㎜{\times}3.5㎜$.

• Proceedings of the IEEK Conference
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• 2003.07b
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• pp.1145-1148
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• 2003

SSN을 줄이기 위해 벌크단의 그라운드와 소스단의 그라운드를 분리한다. 이 방법을 사용하면 소스과 벌크의 전압 차이가 발생하는데 소스에 발생되는 전압은 기생인덕턴스로 인해 노이즈 전압이되고 벌크의 전압은 그라운드에 바로 연결되기 때문에 0V가 된다. 이 방법을 사용하면 소스단에 기생인덕턴스가 벌크단에 미치지 못하게 되어 노이즈를 줄일 수 있다.. 본 논문에서 나타난 결과는 공통그라운드를 사용한 구동 드라이버 보다 SSN을 10% 간단히 줄일수 있다.

• Proceedings of the Korean Society of Broadcast Engineers Conference
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• 2009.01a
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• pp.512-515
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• 2009

A 90-nm CMOS motion estimation (ME) processor was developed by employing dynamic voltage and frequency scaling (DVFS) to greatly reduce the dynamic power. To make full use of the advantages of DVFS, a fast ME algorithm and a small on-chip DC/DC converter were also developed. The fast ME algorithm can adaptively predict the optimum supply voltage ($V_D$) and the optimum clock frequency ($f_c$) before each block matching process starts. Power dissipation of the ME processor, which contained an absolute difference accumulator as well as the on-chip DC/DC converter and DVFS controller, was reduced to $31.5{\mu}W$, which was only 2.8% that of a conventional ME processor.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07a
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• pp.285-288
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• 2005

A 2.8 inch fully integrated SOP employing a high performance LTPS CMOS TFT technology has been developed for mobile display applications. The LCD module is directly interfaced with 3V 6-bit RGB source via timing control circuitry. The integrated data driver comprises a 6-bit hybrid type DAC with low power analog buffer.

• Proceedings of the IEEK Conference
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• 2002.07c
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• pp.1559-1562
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• 2002

This paper describes a 0.13um ultra-high speed 1Mb CMOS SRAM macro with 1.7ns access time. It achieves ultra-high speed operation using two novel approaches. First, it uses process insensitive sense amplifier (Double-Equalized Sense Amplifier) which improves voltage offset by about 10 percent. Secondly, it uses new replica-based sense amplifier driver which improves bit- line evaluation time by about 10 percent compared to the conventional technique. The various memory macros can be generated automatically by using a compiler, word-bit size from 64kb to 1 Mb including repairable redundancy circuits.

• Journal of the Optical Society of Korea
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• v.16 no.1
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• pp.1-5
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• 2012

This paper describes a 150-Mb/s monolithic optical receiver for plastic optical fiber link using a standard CMOS technology. The receiver integrates a photodiode using an N-well/P-substrate junction, a pre amplifier, a post amplifier, and an output driver. The size, PN-junction type, and the number of metal fingers of the photodiode are optimized to meet the link requirements. The N-well/P-substrate photodiode has a 200-${\mu}m$ by 200-${\mu}m$ optical window, 0.1-A/W responsivity, 7.6-pF junction capacitance and 113-MHz bandwidth. The monolithic receiver can successfully convert 150-Mb/s optical signal into digital data through up to 30-m plastic optical fiber link with -10.4 dBm of optical sensitivity. The receiver occupies 0.56-$mm^2$ area including electrostatic discharge protection diodes and bonding pads. To reduce unnecessary power consumption when the light is not over threshold or not modulating, a simple light detector and a signal detector are introduced. In active mode, the receiver core consumes 5.8-mA DC currents at 150-Mb/s data rate from a single 3.3 V supply, while consumes only $120{\mu}W$ in the sleep mode.

• JSTS:Journal of Semiconductor Technology and Science
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• v.17 no.4
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• pp.552-560
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• 2017

This paper presents a transceiver chipset realized in a $0.13-{\mu}m$ CMOS technology for serial digital interface of video data transmission, which compensates the electrical cable loss of 45 dB in maximum at 1.5 Gbps. For the purpose, the TX equips pre-emphasis in the main driver by utilizing a D-FF with clocks generated from a wide-range tuning PLL. In RX, two-stage continuous-time linear equalizers and a limiting amplifier are exploited as a front-end followed by a 1/8-rate CDR to retime the data with inherent 1:8 demultiplexing function. Measured results demonstrate data recovery from 270 Mbps to 1.5 Gbps. The TX consumes 104 mW from 1.2/3.3-V supplies and occupies the area of $1.485mm^2$, whereas the RX dissipate 133 mW from a 1.2-V supply and occupies the area of $1.44mm^2$.

• Journal of electromagnetic engineering and science
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• v.14 no.2
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• pp.68-73
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• 2014

A linear stacked field-effect transistor (FET) power amplifier (PA) is implemented using a $0.18-{\mu}m$ silicon-on-insulator CMOS process for W-CDMA handset applications. Phase distortion by the nonlinear gate-source capacitance ($C_{gs}$) of the common-source transistor, which is one of the major nonlinear sources for intermodulation distortion, is compensated by employing a PMOS linearizer with improved AM-PM. The linearizer is used at the gate of the driver-stage instead of main-stage transistor, thereby avoiding excessive capacitance loading while compensating the AM-PM distortions of both stages. The fabricated 836.5 MHz linear PA module shows an adjacent channel leakage ratio better than -40 dBc up to the rated linear output power of 27.1 dBm, and power-added efficiency of 45.6% at 27.1 dBm without digital pre-distortion.

• Proceedings of the IEEK Conference
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• 2003.07b
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• pp.979-982
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• 2003

Due to the differential transmission technique and low voltage swing, LVDS has been widely used for high speed transmission with low power consumption. This paper presents the design and implementation of interface circuits for 1.5Gb/s operation in 0.35um CMOS technology. The interface circuit ate fully compatible with the low-voltage differential signaling(LVDS) standard. The LVDS proposed in this paper utilizes a sense amplifiers instead of the conventional differential pre-amplifier, which provides a 1.5Gb/s transmission speed with further reduced driver output voltage. Furthermore, the reduced driver output voltage results in reducing the power consumption.

• Proceedings of the IEEK Conference
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• 2006.06a
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• pp.561-562
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• 2006

This paper presents an SRAM which uses the technique to equalize the internal cell node by adding an NMOS transistor. Accordingly, the write driver operates rapidly in a differential current of bit lines, and the operation speed of SRAM improves. An SRAM was implemented with a memory cell, a sense amplifier and a write driver. The SRAM obtained the performance of 18% power reduction and improvement of 56% operation speed. And Power delay product was reduced with 63%. The proposed SRAM was designed based on a 0.35um 1P4M CMOS technology.