• Journal of IKEEE
• /
• v.23 no.3
• /
• pp.858-864
• /
• 2019

A clock system is proposed to eliminate data loss due to frequency difference between sensor nodes in a sensor utility network. The proposed clock system for each sensor node consists of a bust clock-data recovery (CDR) circuit, a digital phase-locked loop outputting a 32-phase clock, and a digital frequency synthesizer using a programmable open-loop fractional divider. A CMOS oscillator using an active inductor is used instead of a burst CDR circuit for the first sensor node. The proposed clock system is designed by using a 65 nm CMOS process with a 1.2 V supply voltage. When the frequency error between the sensor nodes is 1%, the proposed burst CDR has a time jitter of only 4.95 ns with a frequency multiplied by 64 for a data rate of 5 Mbps as the reference clock. Furthermore, the frequency change of the designed digital frequency synthesizer is performed within one period of the output clock in the frequency range of 100 kHz to 320 MHz.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.47 no.11
• /
• pp.37-42
• /
• 2010

A novel hysteresis tunable monolithic comparator circuit based on a $0.35{\mu}m$ CMOS process is suggested, designed, fabricated, measured and analyzed in this paper. To tune the threshold voltage of the hysteresis in the comparator circuit, two external digital bits are used with supply voltage of 3.3V.

• Journal of the Korean Institute of Telematics and Electronics C
• /
• v.34C no.12
• /
• pp.20-27
• /
• 1997

In this paper, a multiplying digital-to-analog converter (MDAC) circuit for low-power high-resolution CMOS algorithmic A/D converters (ADC's) is proposed. The proposed MDAC is designed to operte properly at a supply at a supply voltge between 3 V and 5 V and employs an analog0domain power reduction technique based on a bias switching circuit so that the total power consumption can be optimized. As metal-to-metal capacitors are implemented as frequency compensation capacitors, opamps' performance can be varied by imperfect process control. The MDAC minimizes the effects by the circuit performance variations with on-chip tuning circuits. The proposed low-power MDAC is implementd as a sub-block of a 10-bit 200kHz algorithmic ADC using a 0.6 um single-poly double-metal n-well CMOS technology. With the power-reduction technique enabled, the power consumption of the experimental ADC is reduced from 11mW to 7mW at a 3.3V supply voltage and the power reduction ratio of 36% is achieved.

• Transactions on Electrical and Electronic Materials
• /
• v.8 no.1
• /
• pp.21-25
• /
• 2007

A two-dimensional TCAD MEDICI simulator was used to examine the voltage transfer characteristics, on-off switching properties and latch-up of a CMOS inverter as a function of the n-channel length and doping levels. The channel in a LDMOSFET encloses a junction-type source and is believed to be an important parameter for determining the circuit operation of a CMOS inverter. The digital logic levels of the output and input voltages were analyzed from the transfer curves and circuit operation. The high and low logic levels of the input voltage showed a strong dependency on the channel length, while the lateral substrate resistance from a latch-up path in the CMOS inverter was comparable to that of a typical CMOS inverter with a guard ring.

• Journal of the Korea Society for Simulation
• /
• v.11 no.2
• /
• pp.17-29
• /
• 2002

There is an increasing interest in high-performance A/D(Analog-to-Digital) converters for use in integrated analog and digital mixed processing systems. Pipeline A/D converter architectures coupled with BiCMOS process technology have the potential for realizing monolithic high-speed and high-accuracy A/D converters. In this paper, the design of 12bit pipeline BiCMOS A/D converter presented. A BiCMOS operational amplifier and comparator suitable for use in the pipeline A/D converter. Test/simulation results of the circuit blocks and the converter system are presented. The main features is low distortion track-and-hold with 0-300MHz input bandwidth, and a proprietary 12bit multi-stage quantizer. Measured value is DNL=${\pm}$0.30LSB, INL=${\pm}$0.52LSB, SNR=66dBFS and SFDR=74dBc at Fin=24.5MHz. Also Fabricated on 0.8um BiCMOS process.

• The Journal of the Acoustical Society of Korea
• /
• v.16 no.3
• /
• pp.106-113
• /
• 1997

A 3V CMOS continuous-time fully-balanced integrator for low-voltage analog-digital mixed-mode signal processing is designed in this paper. The basic architecture of the designed fully-balanced integrator is complementary circuit which is composed of NMOS and PMOS transistor. And this complementary circuit can extend transconductance of an integrator. So. the unity gain frequency, pole and zero of integrator are increased by the extended transconductance. The SPICE simulation and small signal analysis results show that the UGF, pole and zero of the integrator is increased larger than those of the compared integrtors. The three-pole active low-pass filter is designed as a application circuit of the fully-balanced integrator, using 0.83V CMOS processing parameter.

• Journal of IKEEE
• /
• v.15 no.3
• /
• pp.205-210
• /
• 2011

A novel hysteresis tunable monolithic comparator circuit based on a 0.35 ${\mu}m$ CMOS process is suggested in this paper. To tune the threshold voltage of the hysteresis in the comparator circuit, two external digital bits are used with supply voltage of 3.3V. The threshold voltage of the suggested comparator circuit is controlled by 234mV by change of 4 digital control bits in the simulation, which is a close agreement to the analytic calculation.

• Journal of Korea Society of Digital Industry and Information Management
• /
• v.19 no.2
• /
• pp.11-25
• /
• 2023

With the increasing advancement of VLSI technology, health care system is also developing to serve the humanity with better care. Therefore, biomedical implantable devices are one of the amazing important invention of scientist to collect data from the body cell for the diagnosis of diseases without any pain. This Biomedical implantable transceiver circuit has several important issues. Oscillator is one of them. For the design flexibility and complete transistor-based architecture ring oscillator is favorite to the oscillator circuit designer. This paper represents the design and analysis of the a 9-stage CMOS ring oscillator using cadence virtuoso tool in 180nm technology. It is also designed to generate the carrier signal of 403.5MHz frequency. Ring oscillator comprises of odd number of stages with a feedback circuit forming a closed loop. This circuit was designed with 9-stages of delay inverter and simulated for various parameters such as delay, phase noise or jitter and power consumption. The average power consumption for this oscillator is 9.32㎼ and average phase noise is only -86 dBc/Hz with the source voltage of 0.8827V.

• Journal of the Korean Institute of Telematics and Electronics A
• /
• v.33A no.6
• /
• pp.230-238
• /
• 1996

In this paper, digital corrction and calibration circuit for a high-resolution CMOS pipelined A/D converter are proposed. The circuits were actually applied to a 12 -bit 4-stage pipelined A/D converter which was implemented in a 0.8${\mu}$m p-well CMOS process. The proposed digital correction logic is based on optimum multiplexer and two nonoverlapping clock phases resulting in a small die area snd a modular pipelined architecture. The propsoed digital calibration logic which consists of calibration control logic, error averaging logic, and memory can effectively perform self-calibration with little modifying analog functional bolcks of a conventional pipelined A/D conveter.

• Journal of the Institute of Electronics Engineers of Korea SC
• /
• v.40 no.1
• /
• pp.19-29
• /
• 2003

This paper proposes a CMOS readout circuit for uncooled micro-bolometer arrays adopting a four-point step calibration technique. The proposed readout circuit employing an 11b analog-to-digital converter (ADC), a 7b digital-to-analog converter (DAC), and an automatic gain control circuit (AGC) extracts minute infrared (IR) signals from the large output signals of uncooled micro-bolometer arrays including DC bias currents, inter-pixel process variations, and self-heating effects. Die area and Power consumption of the ADC are minimized with merged-capacitor switching (MCS) technique adopted. The current mirror with high linearity is proposed at the output stage of the DAC to calibrate inter-pixel process variations and self-heating effects. The prototype is fabricated on a double-poly double-metal 1.2 um CMOS process and the measured power consumption is 110 ㎽ from a 4.5 V supply. The measured differential nonlinearity (DNL) and integrat nonlinearity (INL) of the 11b ADC show $\pm$0.9 LSB and $\pm$1.8 LSB, while the DNL and INL of the 7b DAC show $\pm$0.1 LSB and $\pm$0.1 LSB.