Transactions on Electrical and Electronic Materials

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Effect of Channel Length in LDMOSFET on the Switching Characteristic of CMOS Inverter

  • Cui, Zhi-Yuan (Department of Semiconductor Engineering, Chungbuk University) ;
  • Kim, Nam-Soo (Department of Semiconductor Engineering, Chungbuk University) ;
  • Lee, Hyung-Gyoo (Department of Semiconductor Engineering, Chungbuk University) ;
  • Kim, Kyoung-Won (Hynix Semiconductor Inc.)
  • Published : 2007.02.28
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Abstract

A two-dimensional TCAD MEDICI simulator was used to examine the voltage transfer characteristics, on-off switching properties and latch-up of a CMOS inverter as a function of the n-channel length and doping levels. The channel in a LDMOSFET encloses a junction-type source and is believed to be an important parameter for determining the circuit operation of a CMOS inverter. The digital logic levels of the output and input voltages were analyzed from the transfer curves and circuit operation. The high and low logic levels of the input voltage showed a strong dependency on the channel length, while the lateral substrate resistance from a latch-up path in the CMOS inverter was comparable to that of a typical CMOS inverter with a guard ring.

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References

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