• Journal of the Korea Academia-Industrial cooperation Society
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• v.17 no.6
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• pp.715-720
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• 2016

This paper proposes a PWM (Pulse Width Modulation) voltage mode DC-DC step-up converter for portable devices. The converter, which is operated with a 1 MHz switching frequency, is capable of reducing the mounting area of passive devices, such as inductor and capacitor, and is suitable for compact mobile products. This step-up converter consists of a power stage and a control block. The circuit elements of the power stage are an inductor, output capacitor, MOS transistors Meanwhile, control block consist of OPAMP (operational amplifier), BGR (band gap reference), soft-start, hysteresis comparator, and non-overlap driver and some protection circuits (OVP, TSD, UVLO). The hysteresis comparator and non-overlapping drivers reduce the output ripple and the effects of noise to improve safety. The proposed step-up converter was designed and verified in Magnachip/Hynix 0.18um 1-poly, 6-metal CMOS process technology. The output voltage was 5 V with a 3.3 V input voltage, output current of 100 mA, output ripple less than 1% of the output voltage, and a switching frequency of 1 MHz. These designed DC-DC step-up converters could be applied to the Personal Digital Assistants(PDA), cellular Phones, Laptop Computer, etc.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.8
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• pp.38-44
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• 2007

This paper describes a 12 bit 80MHz CMOS D/A converter for wireless transceiver. Proposed circuit in the paper employes segmented structure which consists of four stage 3bit thermometer decoders. Proposed D/A converter is manufactured 0.35um CMOS n-well digital standard process and measurement results show a ${\pm}1.36SB/{\pm}0.62LSB$ of INL/DNL and $46pV{\cdot}s$ of glitch energy. SNR and SFDR are measured to be 58.5dB and 64.97dB @ Fs=80MHz and Fin=19MHz with a total power consumption of 99mW. Such results proved that our work has low power consumption, high linearity, low glitch and improved dynamic performance. Therefore, our work can be appled to various high speed and high performance circuits.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.46 no.4
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• pp.1-9
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• 2009

In this paper, a small area 12-bit 300MSPS CMOS Digital-to-Analog Converter(DAC) is proposed for display systems. The architecture of the DAC is based on a current steering 6+6 segmented type, which reduces non-linearity error and other secondary effects. In order to improve the linearity and glitch noise, an analog current cell using monitoring bias circuit is designed. For the purpose of reducing chip area and power dissipation, furthermore, a noble self-clocked switching logic is proposed. To verify the performance, it is fabricated with $0.13{\mu}m$ thick-gate 1-poly 6-metal N-well Samsung CMOS technology. The effective chip area is $0.26mm^2$ ($510{\mu}m{\times}510{\mu}m$) with 100mW power consumption. The measured INL (Integrated Non Linearity) and DNL (Differential Non Linearity) are within ${\pm}3LSB$ and ${\pm}1LSB$, respectively. The measured SFDR is about 70dB, when the input frequency is 15MHz at 300MHz clock frequency.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.16 no.6
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• pp.1250-1259
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• 2012

In this paper, a time-domain comparator is proposed for a successive approximation (SA) analog-to-digital converter (ADC) with a low power and high resolution. The proposed time-domain comparator consists of a voltage-controlled delay converter with a clock feed-through compensation circuit, a time amplifier, and binary phase detector. It has a small input capacitance and compensates the clock feed-through noise. To analyze the performance of the proposed time-domain comparator, two 1V 10-bit 200-kS/s SA ADCs with a different time-domain comparator are implemented by using 0.18-${\mu}m$ 1-poly 6-metal CMOS process. The measured SNDR of the implemented SA ADC is 56.27 dB for the analog input signal of 11.1 kHz, and the clock feed-through compensation circuit and time amplifier of the proposed time-domain comparator enhance the SNDR of about 6 dB. The power consumption and area of the implemented SA ADC are 10.39 ${\mu}W$ and 0.126 mm2, respectively.

• Journal of the Institute of Electronics and Information Engineers
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• v.52 no.2
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• pp.112-118
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• 2015

Conventional synchronous circuits cannot keep the circuit performance, and cannot even guarantee correct operations under the influence of PVT variations and aging effects in the nanometer regime. Therefore, in this paper, a DI (delay insensitive) design based NCL (Null Convention Logic) design methodology with a very simple design structure has been used to design digital systems, which is one of well-known asynchronous design methods robust to various variations and does not require any timing analysis. Because circuit-level structures of conventional NCL gates have weakness of low speed, high area overhead or high wire complexity, this paper proposes a new lNCL gates designed at the transistor level for high-speed, low area overhead, and low wire complexity. The proposed NCL gate libraries have been compared to the conventional NCL gates in terms of circuit delay, area and power consumption using a asynchronous multiplier implemented in dongbu 0.11um CMOS technology.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.9
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• pp.800-807
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• 2006

To enhance the conversion speed more fast, we separate the determination process of MSB and LSB with the two independent ADC circuits of the Incremental Sigma Delta ADC. After the 1st Incremental Sigma Delta ADC conversion finished, the 2nd Incremental Sigma Delta ADC conversion start while the 1st Incremental Sigma Delta ADC work on the next input. By determining the MSB and the LSB independently, the ADC conversion speed is improved by two times better than the conventional Extended Counting Incremental Sigma Delta ADC. In processing the 2nd Incremental Sigma Delta ADC, the inverting sample/hold circuit inverts the input the 2nd Incremental Sigma Delta ADC, which is the output of switched capacitor integrator within the 1st Incremental Sigma Delta ADC block. The increased active area is relatively small by the added analog circuit, because the digital circuit area is more large than analog. In this paper, a 14 bit Extended Counting Incremental Sigma-Delta ADC is implemented in $0.25{\mu}m$ CMOS process with a single 2.5 V supply voltage. The conversion speed is about 150 Ksamples/sec at a clock rate of 25 MHz. The 1 MSB is 0.02 V. The active area is $0.50\;x\;0.35mm^{2}$. The averaged power consumption is 1.7 mW.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2015.10a
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• pp.861-862
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• 2015

In this paper we present a low area 12-bit SAR ADC (Successive Approximation Register Analog-to-Digital Converter). The proposed circuit is fabricated using Magnachip/SK Hynix 1-Poly 6-Metal $0.18-{\mu}m$ CMOS process, and it is powered by a 1.8-V supply. Total chip area is reduced by replacing the MIM capacitors with MOS capacitors instead of the capacitors consisting of overall part in chip area. The proposed circuit showed improved power dissipation of 1.9mW, and chip area of $0.45mm^2$ as compared to conventional research results at the power supply of 1.8V. The designed circuit also showed high SNDR (Signal-to-Noise Distortion Ratio) of 70.51dB, and excellent effective number of bits of 11.4bits.

• Journal of Sensor Science and Technology
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• v.27 no.2
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• pp.93-98
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• 2018

In this paper, an energy-efficient 11.49-bit successive approximation register (SAR) capacitance-to-digital converter (CDC) for capacitive sensors with a figure of merit (FoM) of 31.6 pJ/conversion-step is presented. The CDC employs a SAR algorithm to obtain low power consumption and a simplified structure. The proposed circuit uses a capacitive sensing amplifier (CSA) and a dynamic latch comparator to achieve parasitic capacitance-insensitive operation. The CSA adopts a correlated double sampling (CDS) technique to reduce flicker (1/f) noise to achieve low-noise characteristics. The SAR algorithm is implemented in dual operating mode, using an 8-bit coarse programmable capacitor array in the capacitance-domain and an 8-bit R-2R digital-to-analog converter (DAC) in the charge-domain. The proposed CDC achieves a wide input capacitance range of 29.4 pF and a high resolution of 0.449 fF. The CDC is fabricated in a $0.18-{\mu}m$ 1P6M complementary metal-oxide-semiconductor (CMOS) process with an active area of 0.55 mm2. The total power consumption of the CDC is $86.4{\mu}W$ with a 1.8-V supply. The SAR CDC achieves a measured 11.49-bit resolution within a conversion time of 1.025 ms and an energy-efficiency FoM of 31.6 pJ/step.

• The Journal of the Korea institute of electronic communication sciences
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• v.8 no.8
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• pp.1227-1234
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• 2013

An analog array with a 1.2 double poly floating gate transistor has been developed with a standard CMOS fabrication process. The programming of each cell by means of an efficient control circuit eliminates the unnecessary erasing operation which has been widely used in conventional analog memories. It is seen that the path of the signal for both the programming and the reading is almost exactly the same since just one comparator supports both operations. It helps to eliminate the effects of the amplifier input-offset voltage problem on the output voltage for the read operation. In the array, there is no pass transistor isolating a cell of interest from the adjacent cells in the array. Instead of the extra transistors, one extra bias voltage, Vmid, is employed. The experimental results from the memory shows that the resolution of the memory is equivalent to the information content of at least six digital cells. Programming/erasing of each cell is achieved with no detectable disturbance of adjacent cells. Finally, the unique shape of the injector structure in a EEPROM is adopted as a cell of analog array. It reduces the programming voltage below the transistor breakdown voltage without any special fabrication process.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.47 no.5
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• pp.94-99
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• 2010

This paper presents a design procedure of digitally controlled oscillator(DCO) for power optimization. By controlling coarse tuning bits and fine tuning bits of DCO, the proposed design procedure can optimize the power dissipation and does not affect the LSB resolution, frequency range, linearity, portability. For optimization, the relationship between control bits and power dissipation of the DCO was analyzed. The DCO circuits using and unusing proposed design technique have been designed, simulated and proved using 0.13um, 1.2V CMOS library. The DCO circuit with proposed design technique has operation range between 283MHz and 1.1GHz and has 1.7ps LSB resolution and consumes 2.789mW at frequency of 1GHz.