• Nuclear Engineering and Technology
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• v.56 no.8
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• pp.3076-3083
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• 2024

In this work, single photon avalanche diodes (SPADs) were fabricated using the standard 180 nm complementary metal-oxide semiconductor process. Their small size of 15-16 µ m and low operating voltage made it possible to easily integrate them with readout circuits for compact on-chip sensors, particularly those used in the radiation sensor network of a nuclear plant. Four architectures were proposed for the SPADs, with a shallow trench isolation (STI) guard ring and different depletion regions designed to demonstrate the main performance parameters in each experimental configuration. The wide absorption region structure with PSD and a deep N-well could achieve a uniform electric field, resulting in a stable dark count rate (DCR). Additionally, the STI guard ring was implanted to mitigate the premature edge breakdown. A breakdown voltage was achieved for a low operating voltage of 10.75 V. The DCR results showed 286.3 Hz per ㎛² at an excess voltage of 0.04 V. A photon detection probability of 21.48% was obtained at 405 nm.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.17 no.10
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• pp.2387-2394
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• 2013

A low spur phase-locked loop (PLL) with FVCO-sampled feedforward loop-filter has been proposed. Conventional PLL has loop filter made of a resistor and capacitors. The proposed PLL is working stably with the filter consisted of capacitors and a switch. It has been designed with a 1.8V $0.18{\mu}m$ CMOS process and proved by simulation with HSPICE.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.71-71
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• 2009

This paper describes a simple, on-chip CMOS compatible the thin-film inductor applied for the dc-dc converters. A fully CMOS-compatible thin-film inductor with a bottom NiFe core is integrated with the DC-DC converter circuit on the same chip. By eliminating ineffective top magnetic layer, very simple process integration was achieved. Fabricated monolithic thin film inductor showed fairly high inductance of 2.2 ${\mu}H$ and Q factor of 11.2 at 5MHz. When the DC-DC converter operated at $V_{in}=3.3V$ and 5MHz frequency, it showed output voltage $V_{out}=8.0V$, and corresponding power efficiency was 85%.

• Proceedings of the IEEK Conference
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• 2004.08c
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• pp.494-498
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• 2004

In this paper, the design of a CMOS exponential V-I converter (EVIC,) based on Taylor's concept, is presented. The composite NMOS transistor is used for realizing the exponential characteristics. In a 0.25 $\mu$m CMOS process, the simulations show more than 20 dB output current range and 15 dB linear range with the linearity error less than $\pm$ 0.5 dB. The power dissipation is less than 0.3 mW with $\pm$ 1.5 V supply voltage. The proposed EVIC can be used for the design of an extremely low­voltage and low-power variable gain amplifier (VGA) and automatic gain control (AGC).

• Proceedings of the IEEK Conference
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• 2000.06b
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• pp.205-208
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• 2000

In this paper, a low voltage CMOS analog four-quadrant multiplier using two V-I converters is presented. The proposed V-I converter is composed of the series composite transistor and the low voltage composite transistor. The designed analog four-quadrant multiplier has simulated by HSPICE using 0.25$\mu\textrm{m}$ n-well CMOS process parameters with a 2V supply voltage. Simulation results show that the power dissipation is 1.55㎿, the cutoff frequency is 489MHz, and the THD can be 0.26％ at maximum differential input of 1V$\sub$p-p/.

• Proceedings of the IEEK Conference
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• 2000.11d
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• pp.139-142
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• 2000

In this paper, the ADI (Adaptive De-interlacing) algorithm is proposed, which improves visually and subjectively horizontal and vertical edges of the image processed by the ELA(Edge Line-based Average) method. This paper also proposes a VLSI architecture for the proposed algorithm and designed the architecture through the full custom CMOS layout process. The proposed algorithm is verified using C and Matlab and implemented using 0.6$\mu\textrm{m}$ 2-poly 3-metal CMOS standard libraries. For the circuit and logic simulation, Cadence tool is used.

• Proceedings of the IEEK Conference
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• 2005.11a
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• pp.655-658
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• 2005

Due to reduced device sizes and threshold voltages, leakage current becomes an important issue in CMOS design. In a CMOS combinational logic circuit, the leakage current in the standby state depends on the state of the inputs and thus can be minimized by applying an optimal input when the circuit is idling. In this paper, we present a New Input Vector Control algorithm, called Leakage Minimization by Input vector Control (LMIC) for minimal leakage power. This algorithm finds the minimal leakage vector and reduces leakage current up to 22.% on the average, for TSMC 0.18um process parameters. Minimal leakage vectors are very useful in reducing leakage currents in standby mode of operation.

• Journal of IKEEE
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• v.3 no.1 s.4
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• pp.39-49
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• 1999

This paper describes a 1 GHz, low-phase-noise CMOS fractional-N frequency synthesizer with an integrated LC VCO. The proposed frequency synthesizer, which uses a high-order delta-sigma modulator to suppress the fractional spurious tones at all multiples of the fractional frequency resolution offset, has 64 programmable frequency channels with frequency resolution of $f_ref/64$. The measured phase noise is as low as -110 dBc/Hz at a 200 KHz offset frequency from a carrier frequency of 980 MHz. The reference sideband spurs are -73.5 dBc. The prototype is implemented in a $0.5{\mu}m$ CMOS process with triple metal layers. The active chip area is about $4mm^2$ and the prototype consumes 43 mW, including the VCO buffer power consumption, from a 3.3 V supply voltage.

• Journal of the Institute of Electronics and Information Engineers
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• v.50 no.12
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• pp.33-39
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• 2013

There have been studies in improving jitter characteristic of delay locked loop (DLL) even it has a shorter jitter that of phase locked loop (PLL). These studies result in numerous architectures of DLL which improve jitter performance. The paper shows that the jitter characteristic can be improved with various loop filters in DLL. It has been designed with 1.8V $0.18{\mu}m$ CMOS process.

• Journal of Sensor Science and Technology
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• v.4 no.4
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• pp.55-61
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• 1995

A new ISFET array chip, based on detection of the threshold voltages of ISFETs by using an adjustable input, was designed. The chip includes 240 pH-ISFETs and circuitry such as comparators, a decoder and register. The chip has increased reliability, improved accuracy, digital output capability and the possibility of multi sensor implementation. To fabricate the chip, an extended CMOS process was devised and implemented.