• Journal of IKEEE
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• v.13 no.1
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• pp.41-48
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• 2009

This paper describes an implementation of the analog front end (AFE) incorporated with the image signal processing (ISP) unit in the SoC, dominating the performance of the CCD image sensor system. New schemes are exploited in the high-frequency sampling to reduce the sampling uncertainty apparently as the frequency increases, in the structure for the wide-range variable gain amplifier (VGA) capable of $0{\sim}36\;dB$ exponential gain control to meet the needed bandwidth and accuracy by adopting a new parasitic insensitive capacitor array. Moreover, the double cancellation of the black-level noise was efficiently achieved both in the analog and the digital domain. The proposed topology fabricated in a $0.35-{\mu}m$ CMOS process was proved in a full CCD camera system of 10-bit accuracy, dissipating 80 mA at 15 MHz with a 3.3 V supply voltage.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2012.05a
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• pp.88-90
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• 2012

This paper describes a 10-bit 10-MS/s asynchronous successive approximation register (SAR) analog-to-digital converter (ADC) with a rail-to-rail input range. The proposed SAR ADC consists of a capacitor digital-analog converter (DAC), a SAR logic and a comparator. To reduce the frequency of an external clock, the internal clock which is asynchronously generated by the SAR logic and the comparator is used. The time-domain comparator with a offset calibration technique is used to achieve a high resolution. To reduce the power consumption and area, a split capacitor-based differential DAC is used. The designed asynchronous SAR ADC is fabricated by using a 0.18 um CMOS process, and the active area is $420{\times}140{\mu}m^2$. It consumes the power of 0.818 mW with a 1.8 V supply and the FoM is 91.8 fJ/conversion-step.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2012.05a
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• pp.95-98
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• 2012

This paper describes a multiphase delay-locked loop (DLL) that generates a 32-phase output clock over the operating frequency range of 40 MHz to 280 MHz. The matrix-based delay line is used for high resolution of 1-bit delay. A calibration scheme, which improves the linearity of a delay line, is achieved by calibrating the nonlinearity of the input stage of the matrix. The multi-phase DLL is fabricated by using 0.11-${\mu}m$ CMOS process with a 1.2 V supply. At the operating frequency of 125MHz, the measurement results shows that the DNL is less than +0.51/-0.12 LSB, and the measured peak-to-peak jitter of the multi-phase DLL is 30 ps with input peak-to-peak jitter of 12.9 ps. The area and power consumption of the implemented DLL are $480{\times}550{\mu}m^2$ and 9.6 mW at the supply voltage of 1.2 V, respectively.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.43 no.12 s.354
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• pp.81-88
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• 2006

This paper describes a new linear operational transconductance amplifier (OTA). To improve the linearity of the OTA, we employ a mobility compensation circuit that combines the transistor paths operating at the triode and subthreshold regions. The common-mode control schemes consist of a common-mode feedback (CMFB) and common-mode feedforward (CMFF). The circuit enhances linearity of the transconductance (Gm) under the wide input voltage swing range. The proposed OTA shows ${\pm}1%$ Gm variation and the total harmonic distortion (THD) of below -73dB under the input voltage swing range of ${\pm}1.1V$. The OTA is implemented using a $0.35{\mu}m$ n-well CMOS process under 3.3V supply.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.43 no.12 s.354
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• pp.1-7
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• 2006

An on chip voltage down converter (VDC) using the self temperature-compensation techniques is proposed. At a different gate bias voltage, PMOSFET shows different source to drain current characteristic according to the temperature variation. The proposed VDC can reduce its temperature dependency by the source to drain current ratio of two PMOSFET with different gate bias respectively. Proposed circuit is fabricated in Dongbu-anam $0.18{\mu}m$ CMOS process and experimental results show its temperature dependency of $-0.49mV/^{\circ}C$ and external supply dependency of 6mV/V. Total current consumption is only $1.1{\mu}A@2.5V$.

• Proceedings of the IEEK Conference
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• 2005.11a
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• pp.755-758
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• 2005

This paper describes the novel immunoassay sensing system for a portable clinical diagnosis system. It consists of a bead cage reactor and a CMOS integrated biosensor. It showed the simple and easy antibody coating method on beads by flow-through avidin biotin complex technology in a microfluidic device. It showed just 90 nL sample consumption and good result for the application of alpha feto protein. The bead cage reactor has the role of the antibody coating, antigen binding and enzyme linking for the electrochemical sensing method. The CMOS biosensor consists of ISFET (ion selective field effect transistor) biosensor and temperature sensor for detecting pH that is the byproduct of enzyme reaction. The sensitivity is 8 $kHz/^{\circ}C$ in a temperature sensor and 33 mV/pH in a pH sensor. After filling the 15 um polystyrene beads in bead cage, antibody flowed and reacted to beads. Subsequently, the biotinylated antigen flowed and bound to the antibody and GOD (glucose oxidase)-avidin conjugate flowed and reacted to the biotin of the biotinylated antigen. After this reaction process, glucose solution flowed and reacted to the GOD on beads. The hydrogen was generated by glucose-GOD reaction. And it was detected by the pH sensor.

• Journal of IKEEE
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• v.13 no.2
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• pp.118-125
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• 2009

With recent advancement of high-speed, multi-gigabit data transmission capabilities, transmitters usually send data without clock signals for reduction of hardware complexity, power consumption, and cost. Therefore clock and data recovery circuits(CDR) become important to recover the clock and data signals and have been widely studied. This paper presents the design of 10Gbps CDR in 0.18$\mu$m CMOS process. A quarter-rate bang-bang phase detector is designed to reduce the power and circuit complexity, and a 4-stage LC-type VCO is used to improve the jitter characteristics. Simulation results show that the designed CDR consumes 80mW from a 1.8V supply, and exhibits a peak-to-peak jitter of 2.2ps in the recovered clock. The chip layout area excluding pads is 1.26mm$\times$1.05mm.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.26 no.10
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• pp.932-935
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• 2015

This paper proposes a rectifier using bootstrapping and active body biasing in $0.11{\mu}m$ RF CMOS process. The proposed rectifier employs the full-wave rectifying structure with cross coupling and increases the power conversion efficiency by reducing the threshold voltage and leakage current using bootstrapping and active bias biasing. Also, it has been designed to be applied to a wide range of applications from 13.56 MHz used in wireless power transmission to 915 MHz used in RFID. As a measured result, 80 % of power conversion efficiency is obtained when the input power is 0 dBm at $10k{\Omega}$ load resistance and 13.56 MHz. Also 40 % of power conversion efficiency is shown in 915 MHz.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.17 no.2
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• pp.414-422
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• 2013

This paper describes a 10-bit 10-MS/s asynchronous successive approximation register (SAR) analog-to-digital converter (ADC) using a split-capacitor-based differential digital-to-analog converter (DAC). SAR logic and comparator are asynchronously operated to increase the sampling frequency. The time-domain comparator with an offset calibration technique is used to achieve a high resolution. The proposed 10-bit 10-MS/s asynchronous SAR ADC with the area of $140{\times}420{\mu}m^2$ is fabricated using a 0.18-${\mu}m$ CMOS process. Its power consumption is 1.19 mW at 1.8 V supply. The measured SNDR is 49.95 dB for the analog input frequency of 101 kHz. The DNL and INL are +0.57/-0.67 and +1.73/-1.58, respectively.

• Journal of the Korea Computer Industry Society
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• v.6 no.5
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• pp.757-766
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• 2005

There have been great demands for higher density SRAM in all area of SRAM applications, such as mobile, network, cache, and embedded applications. Therefore, aggressive shrinkage of 6T Full CMOS SRAM had been continued as the technology advances, However, conventional 6T Full CMOS SRAM has a basic limitation in the cell size because it needs 6 transistors on a silicon substrate compared to 1 transistor in a DRAM cell. The typical cell area of 6T Full CMOS SRAM is $70{\sim}90F^{2}$, which is too large compared to $8{\sim}9F^{2}$ of DRAM cell. With 80nm design rule using 193nm ArF lithography, the maximum density is 72M bits at the most. Therefore, pseudo SRAM or 1T SRAM, whose memory cell is the same as DRAM cell, is being adopted for the solution of the high density SRAM applications more than 64M bits. However, the refresh time limits not only the maximum operation temperature but also nearly all critical electrical characteristics of the products such as stand_by current and random access time. In order to overcome both the size penalty of the conventional 6T Full CMOS SRAM cell and the poor characteristics of the TFT load cell, we have developed $S^{3}$ cell. The Load pMOS and the Pass nMOS on ILD have nearly single crystal silicon channel according to the TEM and electron diffraction pattern analysis. In this study, we present $S^{3}$ SRAM cell technology with 100nm design rule in further detail, including the process integration and the basic characteristics of stacked single crystal silicon TFT.