• Transactions on Electrical and Electronic Materials
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• v.14 no.5
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• pp.235-241
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• 2013

A low power CMOS control circuit is applied in an integrated DC-DC buck converter. The integrated converter is composed of a feedback control circuit and power block with 0.35 ${\mu}m$ CMOS process. A current-sensing circuit is integrated with the sense-FET method in the control circuit. In the current-sensing circuit, a current-mirror is used for a voltage follower in order to reduce power consumption with a smaller chip-size. The N-channel MOS acts as a switching device in the current-sensing circuit where the sensing FET is in parallel with the power MOSFET. The amplifier and comparator are designed to obtain a high gain and a fast transient time. The converter offers well-controlled output and accurately sensed inductor current. Simulation work shows that the current-sensing circuit is operated with an accuracy of higher than 90% and the transient time of the error amplifier is controlled within $75{\mu}sec$. The sensing current is in the range of a few hundred ${\mu}A$ at a frequency of 0.6~2 MHz and an input voltage of 3~5 V. The output voltage is obtained as expected with the ripple ratio within 1%.

• Proceedings of the KIEE Conference
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• 2008.10b
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• pp.217-218
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• 2008

Since the digital TV signal band is very wide ($54{\sim}806MHz$), the VCO used in the frequency synthesizer must also have a wide frequency tuning range. Multiple LC VCOs have been used to cover such wide frequency band. However, the chip area increases due to the increased number of integrated inductors. A general method for achieving both reduced VCO gain(Kvco) and wide frequency band is to use the switched-capacitor bank LC VCO. In this paper, a scheme is proposed to cover the full band using only one VCO. The RF VCO block designed using a 0.18um CMOS process consists of a wideband LC VCO with reduced variation of VCO gain and frequency steps. Buffers, divide-by-2 circuits and control logics the simulation results show that the designed circuit has a phase noise at 100kHz better than -106dBc/Hz throughout the signal band and consumes $9.5{\sim}13mA$ from a 1.8V supply.

• The KIPS Transactions:PartA
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• v.10A no.6
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• pp.671-676
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• 2003

In this paper, we proposed a new First Partial product Addition (FPA) architecture with new compressor (or parallel counter) to CSA tree built in the process of adding partial product for improving speed in the fast parallel multiplier to improve the speed of calculating partial product by about 20% compared with existing parallel counter using full Adder. The new circuit reduces the CLA bit finding final sum by N/2 using the novel FPA architecture. A 5.14nS of multiplication speed of the $16{\times}16$ multiplier is obtained using $0.25\mu\textrm{m}$ CMOS technology. The architecture of the multiplier is easily opted for pipeline design and demonstrates high speed performance.

• 제어로봇시스템학회:학술대회논문집
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• 2005.06a
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• pp.1787-1790
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• 2005

We have developed satellite devices for fine attitude control of the Science & Technology Satellite-2 (STSAT-2) scheduled to be launched in 2007. The analog sun sensors which have been continuously developed since the 1990s are not adequate for satellites which require fine attitude control system. From the mission requirements of STSAT-2, a compact, fast and fine digital sensor was proposed. The test of the fine attitude determination for the pitch and roll axis, though the main mission of STSAT-2, will be performed by the newly developed FDSS. The FDSS use a CMOS image sensor and has an accuracy of less than 0.01degrees, an update rate of 20Hz and a weight of less than 800g. A pinhole-type aperture is substituted for the optical lens to minimize the weight while maintaining sensor accuracy by a rigorous centroid algorithm. The target process speed is obtained by utilizing the Field Programmable Gate Array (FPGA) in acquiring images from the CMOS sensor, and storing and processing the data. This paper also describes the analysis of the optical performance for the proper aperture selection and the most effective centroid algorithm.

• JSTS:Journal of Semiconductor Technology and Science
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• v.16 no.5
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• pp.595-604
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• 2016

Utilizing a standard 130-nm CMOS process, a RF frontend is designed at 24 GHz for automotive collision avoidance radar application. Single IF direct conversion receiver (DCR) architecture is adopted to achieve high integration level and to alleviate the DCR problem. The proposed frontend is composed of a two-stage LNA and downconversion mixers. To save power consumption, and to enhance gain and linearity, stacked NMOS-PMOS $g_m$-boosting technique is employed in the design of LNA as the first stage. The switch transistors in the mixing stage are biased in subthreshold region to achieve low power consumption. The single balanced mixer is designed in PMOS transistors and is also realized based on the well-known folded architecture to increase voltage headroom. This frontend circuit features enhancement in gain, linearity, and power dissipation. The proposed circuit showed a maximum conversion gain of 19.6 dB and noise figure of 3 dB at the operation frequency. It also showed input and output return losses of less than -10 dB within bandwidth. Furthermore, the port-to-port isolation illustrated excellent characteristic between two ports. This frontend showed the third-order input intercept point (IIP3) of 3 dBm for the whole circuit with power dissipation of 6.5 mW from a 1.5 V supply.

• JSTS:Journal of Semiconductor Technology and Science
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• v.17 no.1
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• pp.110-119
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• 2017

This paper describes a CMOS image sensor (CIS) with dual correlated double sampling (CDS) and column-parallel analog-to-digital converter (ADC) and its measurement method using a field-programmable gate array (FPGA) integrated module. The CIS is composed of a $320{\times}240$ pixel array with $3.2{\mu}m{\times}3.2{\mu}m$ pixels and column-parallel 10-bit single-slope ADCs. It is fabricated in a $0.11-{\mu}m$ CIS process, and consumes 49.2 mW from 1.5 V and 3.3 V power supplies while operating at 6.25 MHz. The measured dynamic range is 53.72 dB, and the total and column fixed pattern noise in a dark condition are 0.10% and 0.029%. The maximum integral nonlinearity and the differential nonlinearity of the ADC are +1.15 / -1.74 LSB and +0.63 / -0.56 LSB, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.1254-1257
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• 2004

This paper presents a built-in current sensor(BICS) that can detect defects in CMOS integrated circuits through current testing technique - Iddq test. Current test has recently been known to a complementary testing method because traditional voltage test cannot cover all kinds of bridging defects. So BICS is widely used for current testing. but there are some critical issues - a performance degradation, low speed test, area overhead, etc. The proposed BICS has a two operating mode- normal mode and test mode. Those methods minimize the performance degradation in normal mode. We also used a current-mode differential amplifier that has a input as a current, so we can realize higher speed current testing. Furthermore, only using 10 MOSFETS and 3 inverters, area overhead can be reduced by 6.9%. The circuit is verified by HSPICE simulation with 0.25 urn CMOS process parameter.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.39 no.7
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• pp.89-96
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• 2002

In this paper, the ADI(Adaptive De-interlacing) algorithm is proposed, which improves visually and subjectively horizontal and vertical edges of the image processed by the ELA(Edge Line-based Average) method. This paper also proposes a VLSI architecture for the proposed algorithm and the architecture designed through the full custom CMOS layout process. The proposed algorithm is verified using C and Matlab and implemented using $0.6{\mu}m$ 2-poly 3-metal CMOS standard libraries. For the circuit and logic simulation, Cadence tool is used.

• Journal of IKEEE
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• v.15 no.3
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• pp.205-210
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• 2011

A novel hysteresis tunable monolithic comparator circuit based on a 0.35 ${\mu}m$ CMOS process is suggested in this paper. To tune the threshold voltage of the hysteresis in the comparator circuit, two external digital bits are used with supply voltage of 3.3V. The threshold voltage of the suggested comparator circuit is controlled by 234mV by change of 4 digital control bits in the simulation, which is a close agreement to the analytic calculation.

• JSTS:Journal of Semiconductor Technology and Science
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• v.3 no.4
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• pp.211-216
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• 2003

This work describes a 3 V 12b 100 MS/s CMOS digital-to-analog converter (DAC) for high-speed communication system applications. The proposed DAC is composed of a unit current-cell matrix for 8 MSBs and a binary-weighted array for 4 LSBs, trading-off linearity, power consumption, chip area, and glitch energy with this process. The low-glitch switch driving circuits are employed to improve linearity and dynamic performance. Current sources of the DAC are laid out separately from the current-cell switch matrix core block to reduce transient noise coupling. The prototype DAC is implemented in a 0.35 um n-well single-poly quad-metal CMOS technology and the measured DNL and INL are within ${\pm}0.75$ LSB and ${\pm}1.73$ LSB at 12b, respectively. The spurious-free dynamic range (SFDR) is 64 dB at 100 MS/s with a 10 MHz input sinewave. The DAC dissipates 91 mW at 3 V and occupies the active die area of $2.2{\;}mm{\;}{\times}{\;}2.0{\;}mm$