• Journal of Advanced Navigation Technology
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• v.13 no.1
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• pp.48-53
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• 2009

The CMOS RF front-end for Global Positioning System(GPS)are implemented in 1P8M CMOS $0.13{\mu}m$ process. The LNAs consist of LNA1 with high gain and low NF, and LNA2 with low gain and high IIP3 for supporting operation with active and passive antenna. the measured performances of both LNAs are 16.4/13.8 dB gain, 1.4/1.68 dB NF, and -8/-4.4 dBm IIP3 with 3.2/2 mA form 1.2 V supply, respectively. The quadrature downconversion mixer is followed by transimpedance amplifier with gain controllability from 27.5 to 41 dB. The front-end performances in LNA1 mode are 39.8 dB conversion gain, 2.2 dB NF, and -33.4 dBm IIP3 with 6.6 mW power consumption.

• Journal of IKEEE
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• v.8 no.1 s.14
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• pp.54-62
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• 2004

In this paper, we discuss on the design of a current mode CMOS multiplier circuit over $GF(3^m)$. Using the standard basis, we show the variation of vector representation of multiplicand by multiplying primitive element α, which completes the multiplicative process. For the $GF(3^m)$ multiplicative circuit design, we design GF(3) adder and multiplier circuit using current mode CMOS technology and get the simulation results. Using the basic gates - GF(3) adder and multiplier, we build the $GF(3^m)$ multiplier circuit and show the examples for the case m=3. We also propose the assembly of the operation blocks for a complete $GF(3^m)$ multiplier. Therefore, the proposed circuit is easily extensible to other p and m values over $GF(p^m)$ and has advantages for VLSI implementation. We verify the validity of the proposed circuit by functional simulations and the results are provided.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.46 no.11
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• pp.16-23
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• 2009

A 12b 10MS/s pipelined ADC with low DC gain amplifiers is presented. The pipelined ADC using a reference scaling technique is proposed to compensate the gain error in MDACs due to a low DC gain amplifier. To minimize the performance degradation of the ADC due to amplifier offset, the proposed offset trimming circuit is employed m the first-stage MDAC amplifier. Additional reset switches are used in all MDACs to reduce the memory effect caused by the low DC gain amplifier. The measured differential and integral non-linearities of the prototype ADC with 45dB DC gain amplifiers are less than 0.7LSB and 3.1LSB, respectively. The prototype ADC is fabricated in a $0.35{\mu}m$ CMOS process and achieves 62dB SNDR and 72dB SFDR with 2.4V supply and 10MHz sampling frequency while consuming 19mW power.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.46 no.4
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• pp.72-78
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• 2009

This paper proposes a low phase noise ring voltage controlled oscillator(VCO) with a standard $0.13{\mu}m$ CMOS process for PLL circuit using the VCO-gain-controlled Delay cell. The proposed Delay cell architecture with a active resistor using a MOS transistor. This method can reduced a VCO gain so that improve phase noise. And, Delay cell consist of Wide-Swing Cascode current mirror, Positive Latch and Symmetric load for low phase noise. The measurement results demonstrate that the phase noise is -119dBc/Hz at 1MHz offset from 1.9GHz. The VCO gain and power dissipation are 440MHz/V and 9mW, respectively.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.47 no.5
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• pp.100-105
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• 2010

A multi-band low noise amplifier (LNA) is designed in 90 nm RF CMOS process for 3GPP LTE (3rd Generation Partner Project Long Term Evolution) applications. The designed multi-band LNA covers the eight frequency bands between 1.85 and 2.8 GHz. A tunable input matching circuit is realized by adopting a switched capacitor array at the LNA input stage for providing optimum performances across the wide operating band. Current steering technique is adopted for the gain control in three steps. The performances of the LNA are verified through post-layout simulations (PLS). The LNA consumes 17 mA at 1.2 V supply voltage. It shows a power gain of 26 at the normal gain mode, and provides much lower gains of 0 and -6.7 in the bypass-I and -II modes, respectively. It achieves a noise figure of 1.78 dB and a IIP3 of -12.8 dBm over the entire band.

• Journal of the Korean Institute of Telematics and Electronics C
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• v.36C no.12
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• pp.20-26
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• 1999

A CMOS 6-bit 100MSPS ADC for DBS receiver is designed. The proposed ADC is composed of folding block, latch block, and digital block. The cascode interpolating block and kickback reduced latch are proposed with a high speed architecture. To verify the performance of ADC, simulations are carried out by HSPICE. The ADC achieves a clock frequency of 100MHz with a power dissipation of 40mW for 3 V supply voltage. The active chip area is $1500{\mu}m{\times}1000{\mu}m$with $0.65{\mu}m$ 2-poly 2-metal CMOS process. Further, INL and DNL are within ${\pm}0.6LSB$, ${\pm}0.5LSB$, respectively. SNDR is about 33dB at 10MHz input frequency.

• Journal of the Korean Institute of Telematics and Electronics C
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• v.35C no.12
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• pp.13-22
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• 1998

In this paper, we propose a high-performance BICS(built-in current sensor) which is fabricated in 0.8${\mu}{\textrm}{m}$ single-poly two-metal process for IDDQ testing of CMOS VLSI circuit. The CUT(circuit under test) is 4-bit full adder with a bridging fault. Using two nMOSs that have different size, two bridging faults that have different resistance values are injected in the CUT. And controlling a gate node, we experimented various fault effects. The proposed BICS detects the faulty current at the end of the clock period, therefore it can test a CUT that has a much longer critical propagation delay time and larger area than conventional BICSs. As expected in the HSPICE simulation, experimental results of fabricated chip demonstrated that the proposed BICS can exactly detect bridging faults in the circuit.

• Journal of the Institute of Electronics Engineers of Korea SC
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• v.38 no.6
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• pp.48-55
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• 2001

This paper presents a 1.8 GHz CMOS frequency synthesizer with high-speed on-chip pseudo 2-stage ring VCO. We introduce and analysis the conditions in which the ring VCO can oscillate. For high speed operation, we propose the pseudo 2-stage ring VCO that eliminates dummy loads. It can operate up to 1.87 GHz with 0.6 m CMOS process, which shows 21.3% improvement aginst the conventional 4-stage ring VCO in the aspect of the speed. When the frequency synthsizer with the psedo 2-stage ring VCO is locked at 1.85GHz, the jitter measured to 24 psec. The proposed VCO and the frequency synthesizer are directly applicable to high speed clocky synhtesizers.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.46 no.12
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• pp.80-86
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• 2009

In this paper, we present a new charge pump circuit feasible for the implementation with standard twin-well CMOS process technology. The proposed charge pump employs PMOS-switching dual charge-transfer paths and a simple two-phase clock. Since charge transfer switches are fully turned on during each half of clock cycle, they transfer charges completely from the present stage to the next stage without suffering threshold voltage drop. During one clock cycle, the pump transfers charges twice through two pumping paths which are operating alternately. The performance comparison by simulations and measurements demonstrates that the proposed charge pump exhibits the higher output voltage, the larger output current and a better power efficiency over the traditional twin-well charge pumps.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.2
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• pp.55-60
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• 2007

This paper presents a compact double resolution scheme for the optical angle sensor based on 1-dimensional CMOS photodiode pixel array. All the pixels are divided into the even pixel and the odd pixel groups. The winner take all circuit is provided for each group. The proposed interpolation scheme increases the resolution by 2 from the winner addresses and winner values. The interpolation scheme can be implemented without any additional pixels or winner take all circuits and require only a comparator and a XOR gate. The proposed pixel array chip that has 336 photodiode pixels with $5.6{\mu}m$ pitch was fabricated with $0.35{\mu}m$ CMOS process and was assembled with a $50{\mu}m$ slit to form an angle sensor. The measured resolution is $0.1{\circ}$ with the proposed interpolation. The chip consumes 35mW and provides 8k samples per second.