• Journal of the Institute of Electronics Engineers of Korea SD
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• v.41 no.2
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• pp.1-8
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• 2004

This paper describes the design of monolithic optical transceiver circuitry being used as a part of the fiber optic modules. It has been designed in 0.6 ${\mu}{\textrm}{m}$ 2-poly 3 metal silicon CMOS analog technology and operates at 155.52 Mbps(STM-1) data rates. It drives laser diode to transmit intensity modulated optical signal according to 155.52 Mbps electrical data from system. Also, it receives 155.52 Mbps optical data that transmitted from other systems and converts it to electrical data using photo diode and amplifier. To avoid noise and interference between transmitter and receiver on one chip, layout techniques such as special placement, power supply separation, guard ring, and protection wall were used in the design. The die area is 4 ${\times}$ 4 $\textrm{mm}^2$ and the estimated power dissipation is less than 900 ㎽ with a single 5 V supply.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.38B no.6
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• pp.427-434
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• 2013

In this paper, the design and layout of a 2.5 Gbps arrayed VCSEL driver for optical transceiver having arrayed multi-channel of integrating module is confirmed. In this paper, a 4 channel 2.5 Gbps VCSEL (vertical cavity surface emitting laser) driver array with automatic optical power control is implemented using $0.18{\mu}m$ CMOS process technology that drives a $1550{\mu}m$ high speed VCSEL used in optical transceiver. To enhance the bandwidth of the optical transmitter, active feedback amplifier with negative capacitance compensation is exploited. We report a distinct improvement in bandwidth, voltage gain and operation stability at 2.5Gbps data rate in comparison with existing topology. The 4-CH chip consumes only 140 mW of DC power at a single 1.8V supply under the maximum modulation and bias currents, and occupies the die area of $850{\mu}m{\times}1,690{\mu}m$ excluding bonding pads.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.23 no.11
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• pp.1297-1306
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• 2012

This work presents a 77 GHz radar transmitter for the automotive radar system. An integrated 13 GHz frequency synthesizer fabricated using 130 nm RF CMOS process drives a commercial W-band compound semiconductor monolithic multifunction amplifier(MPA), which includes a frequency multiplier by six to generate 77 GHz transmitting signal. The 13 GHz frequency synthesizer includes a high efficiency injection buffer of 4 dBm output power to drive the MPA. The output power of 77 GHz radar transmitter is higher than 13.99 dBm and the magnitude of the reference spur relative to the carrier is -36.45 dBc. The phase noise is -81 dBc/Hz at 1 MHz offset frequency from the carrier.

• Journal of the Institute of Electronics and Information Engineers
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• v.53 no.10
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• pp.34-39
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• 2016

A low-voltage, low-power analog front-end IC for neural recording implant devices is presented. The proposed IC consists of a low-noise neural amplifier and a programmable active bandpass filter to process neural signals residing in the band of 1 Hz to 5 kHz. The neural amplifier is based on a source-degenerated folded-cascode operational transconductance amplifier (OTA) for good noise performance while the following bandpass filter utilizes a low-power current-mirror based OTA with programmable high-pass cutoff frequencies from 1 Hz to 300 Hz and low-pass cutoff frequencies from 300 Hz to 8 kHz. The total recording analog front-end provides 53.1 dB of voltage gain, $4.68{\mu}Vrms$ of integrated input referred noise within 1 Hz to 10 kHz, and noise efficiency factor of 3.67. The IC is designed using $18-{\mu}m$ CMOS process and consumes a total of $3.2{\mu}W$ at 1-V supply voltage. The layout area of the IC is $0.19 mm^2$.

• The KIPS Transactions:PartA
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• v.11A no.2
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• pp.195-202
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• 2004

This paper introduces the design or parallel Pipeline high-speed analog-to-digital converter(ADC) for the high-resolution video applications which require very precise sampling. The overall architecture of the ADC consists of 4-channel parallel time-interleaved 10-bit pipeline ADC structure a]lowing 200MSample/s sampling speed which corresponds to 4-times improvement in sampling speed per channel. Key building blocks are composed of the front-end sample-and-hold amplifier(SHA), the dynamic comparator and the 2-stage full differential operational amplifier. The 1-bit DAC, comparator and gain-2 amplifier are used internally in each stage and they were integrated into single switched capacitor architecture allowing high speed operation as well as low power consumption. In this work, the gain of operational amplifier was enhanced significantly using negative resistance element. In the ADC, a delay line Is designed for each stage using D-flip flops to align the bit signals and minimize the timing error in the conversion. The converter has the power dissipation of 280㎽ at 3.3V power supply. Measured performance includes DNL and INL of +0.7/-0.6LSB, +0.9/-0.3LSB.

• ETRI Journal
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• v.33 no.3
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• pp.366-373
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• 2011

In this paper, we propose a low-power all-digital phase-locked loop (ADPLL) with a wide input range and a high resolution time-to-digital converter (TDC). The resolution of the proposed TDC is improved by using a phase-interpolator and the time amplifier. The phase noise of the proposed ADPLL is improved by using a fine resolution digitally controlled oscillator (DCO) with an active inductor. In order to control the frequency of the DCO, the transconductance of the active inductor is tuned digitally. The die area of the ADPLL is 0.8 $mm^2$ using 0.13 ${\mu}m$ CMOS technology. The frequency resolution of the TDC is 1 ps. The DCO tuning range is 58% at 2.4 GHz and the effective DCO frequency resolution is 0.14 kHz. The phase noise of the ADPLL output at 2.4 GHz is -120.5 dBc/Hz with a 1 MHz offset. The total power consumption of the ADPLL is 12 mW from a 1.2 V supply voltage.

• Proceedings of the KIEE Conference
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• 2006.10c
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• pp.606-608
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• 2006

This paper describes a 8bit 10MS/s low power pipelined analog-to-digital converter(ADC). To reduce power consumption in proposed ADC, a high gain op-amp that consumes large power in MDAC(multiplying DAC) of conventional pipelined ADC is replaced with simple comparator and current sources. Moreover, differential charge transfer amplifier technique with latch in the sub-ADC reduces the power consumption to less than half compared with the conventional sub-ADC which use high speed comparator. The proposed ADC shows the power consumption of 1.8mW at supply voltage of 1.8V. This proposed ADC is suitable to apply to the portable display device. The circuit was implemented with 0.18um CMOS technology and the core size of circuit is 2.5mm${\times}$1mm.

• Journal of Korea Society of Industrial Information Systems
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• v.21 no.1
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• pp.61-70
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• 2016

This paper describes a new PMU(parametric measurement unit) design technique for automatic test equipment(ATE). Only one DDA(differential difference amplifier) is used to force the test signals to DUT(device under test), while conventional design uses two or more amplifiers to force test signals. Since the proposed technique does not need extra amplifiers in feedback path, the proposed PMU inherently guarantees stable operation. Moreover, to measure the response signals from DUT, proposed technique also adopted only one DDA amplifier as an IA(instrument amplifier), while conventional IA uses 3 amplifiers and several resistors. The DDA adopted two rail-to-rail differential input stages to handle full-range differential signals. Gain enhancement technique is used in folded-cascode type DDA to get open loop gain of 100 dB. Proposed PMU design enables accurate and stable operation with smaller hardware and lower power consumption. This PMU is implemented with 0.18 um CMOS process and supply voltage is 1.8 V. Input ranges for each force mode are 0.25~1.55 V at voltage force and 0.9~0.935 V at current force mode.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.29 no.10
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• pp.758-765
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• 2018

This paper presents a 24-GHz frequency-modulated continuous wave(FMCW) radar transceiver with two Rx and one Tx channels in 65-nm complementary metal-oxide-semiconductor(CMOS) process and implemented it on a radar system using the developed transceiver chip. The transceiver chip includes a $14{\times}$ frequency multiplier, low-noise amplifier, down-conversion mixer, and power amplifier(PA). The transmitter achieves >10 dBm output power from 23.8 to 24.36 GHz and the phase noise is -97.3 GHz/Hz at a 1-MHz offset. The receiver achieves 25.2 dB conversion gain and output $P_{1dB}$ of -31.7 dBm. The transceiver consumes 295 mW of power and occupies an area of $1.63{\times}1.6mm^2$. The radar system is fabricated on a low-loss Duroid printed circuit board(PCB) stacked on the low-cost FR4 PCBs. The chip and antenna are placed on the Duroid PCB with interconnects and bias, gain blocks and FMCW signal-generating circuitry are mounted on the FR4 PCB. The transmit antenna is a $4{\times}4$ patch array with 14.76 dBi gain and receiving antennas are two $4{\times}2$ patch antennas with a gain of 11.77 dBi. The operation of the radar is evaluated and confirmed by detecting the range and azimuthal angle of the corner reflectors.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2011.05a
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• pp.143-146
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• 2011

A 50-MS/s 10-bit pipelined ADC with 1.2Vpp differential input range is proposed in this paper. The designed pipelined ADC consists of eight stage of 1.5bit/stage, one stage of 2bit/stage, digital error correction block, bias & reference driver, and clock generator. 1.5bit/stage is consists of sub-ADC, DAC and gain stage, Specially, a sample-and hold amplifier (SHA) is removed in the designed pipelined ADC to reduce the hardware and power consumption. Also, the proposed bootstrapped switch improves the Linearity of the input analog switch and the dynamic performance of the total ADC. The reference voltage was driven by using the on-chip reference driver without external reference. The proposed pipelined ADC was designed by using a 0.18um 1-poly 5-metal CMOS process with 1.8V supply. The total area including the power decoupling capacitor and power consumption are $0.95mm^2$ and 60mW, respectively. Also, the simulation result shows the ENOB of 9.3-bit at the Nyquist sampling rate.