• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제53권6호
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• pp.300-304
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• 2004

We have proposed the junction termination design employing shallow trench filled with silicon dioxide and field limiting ring (FLR). We have designed trenches between P+ FLRs to decrease the junction termination radius without sacrificing the breakdown voltage characteristics. We have successfully fabricated and measured improved breakdown voltage characteristics of the Proposed device for 1200 V-class applications. The junction termination radius of the proposed device has decreased by 15%-21% compared with that of the conventional FLR at the identical breakdown voltage. The junction termination area of the proposed device has decreased by 37.5% compared with that of the conventional FLR. The breakdown voltage of the proposed device employing 7 trenches was 1156 V, which was 80% of the ideal parallel-plane .junction breakdown voltage.

• 조명전기설비학회논문지
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• 제15권5호
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• pp.28-33
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• 2001

본 논문에서는 금속성 파티클이 GIS 스페이서에 부착되었을 경우 파괴전압특성에 대한 립의 여러 조건에서의 효과를 분석하였다. 립-스페이서의 여러 위치에 금속성 파티클을 부착하고 립의 위치, 길이, 두께 등의 변화에 따른 파괴전압을 측정하여 기조에 제안된 립-스페이서보다 파괴전압을 더욱 향상시킬 수 있는 형상을 제시하고자 하였다. 그 결과 립이 없거나 립이 하나인 스페이서 보다 립이 두 개 있는 형태의 립-스페이서가 전반적으로 가장 양호한 파괴전압 특성을 가지고 있음을 알 수 있었으며, 립의 길이와 두께에 따라서도 파괴전압 특성이 달라짐을 알 수 있었다. 특히 립의 끝단을 라운드 처리함으로써 파괴전압 특성을 더욱 향상시킬 수 있음을 알 수 있었다.

• E2M - 전기 전자와 첨단 소재
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• 제7권5호
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• pp.376-382
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• 1994

In this study we developed a program(DEVSIM) to simulate the two dimensional distribution of the electrostatic potential and the electric field of the arbitrary structure consisting of GaAs/AlGaAs semiconductor and metal as well as dielectric. By the comparision of the electric field distribution of GaAs MESFETs with the various recess gates we proposed a suitable device structure to improve the breakdown characteristics of MESFET. According to the results of simulation the breakdown characteristics were improved as the thickness of the active epitaxial layer was decreased. And the planar structure, which had the highly doped layer under the drain for the ohmic contact, was the worst because the highly doped layer prevented the space charge layer below the gate from extending to the drain, which produced the narrow spaced distribution of the electrostatic potential contours resulting in the high electric field near the drain end. Instead of the planar structure with the highly doped drain the recess gate structure having the highly doped epitaxial drain layer show the better breakdown characteristics by allowing the extention of the space charge layer to the drain. Especially, the structure in which the part of the drain epitaxial layer near the gate show the more improvement of the breakdown characteristics.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1996년도 춘계학술대회 논문집
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• pp.235-238
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• 1996

In this paper, We intended to evaluate the characteristics of XLPE/EPDM interface which exists in the cable joint. The fault was mainly occurred in this interface. Thus we looked into the electrical characteristics through the conduction current and the breakdown test. Through from the experiment, we obtained the result that the conduction current in this interface flowed less than other dielectric materials, that the breakdown strength was higher and that the pressure dependance ㅐf the breakdown strength was higher.

• 조명전기설비학회논문지
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• 제16권2호
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• pp.59-64
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• 2002

본 논문에서는 전계해석을 통하여 금속성 파티클이 GIS 스페이서의 여러 위치에 부차되었을 경우 립이 파괴전압특성에 미치는 영향을 분석하였다. 또한, 립-스페이서의 여러 위치에 금속성 파티클을 부착하고 립의 모양, 길이, 두께 등의 변화에 따라 얻은 파괴진압특성 실험결과를 전계해석의 결과와 비교·검토하였다. 전계해석의 결과 립의 연면에서의 전계집중이 다른 부분에 비하며 완화되어 절연파괴시 발생된 스트리머의 진전이 억제될 수 있다는 것을 알 수 있었으며, 실험을 통하여 파괴전압이 상승된다는 것을 확인할 수 있었다. 또한 립의 길이와 두께 등에 따라서도 파괴전압 특성이 달라짐을 알 수 있었다. 또한 립의 끝단을 라운드 처리함으로써 파괴전압 특성을 더욱 향상시킬 수 있음을 전계해석과 실험을 통하여 알 수 있었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 춘계학술대회 논문집 센서 박막재료 반도체 세라믹
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• pp.170-173
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• 2003

In this paper, we proposed a new bulk LDMOS structure which can be used for RF application, and its fabrication steps were introduced. The simulated devices consist of three types: Bulk device, SLB(SOI Like Bulk), and SOI device. As a result of process and device simulation, we showed electrical characteristics, such as threshold voltage, subthreshold slope, DIBL(Drain Induced Barrier Lowering), off-state current, and breakdown voltage. In this simulation study, the lattice temperature model was adopted to see the device characteristics with lattice temperature during the operation. SLB device structure showed the best breakdown characteristics among the other structures. The breakdown voltage of SLB structure is about 9V, that of bulk is 7V, and that of SOI is 8V.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집
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• pp.605-608
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• 2001

With the intention of investigating the breakdown properties of oil-immersed transformer oils in temperature range of 20∼100[$^{\circ}C$], we are made researches AC breakdown in the gap of 500∼2,500[$\mu\textrm{m}$]. The classification for the physical properties of oil for oil-immersed transformer by FTH and $^1$H-NMR experiments was confirmed to type of mineral oils. As the dependance of breakdown properties due to electrode gap length variation, breakdown voltage was found increasing according to the increase of gap, while dielectric strength was decreasing. As a result the characteristics for AC breakdown, It goes to prove that the breakdown voltage was increased to 90[$^{\circ}C$] but decreased over 90[$^{\circ}C$] in the temperature range. Also, breakdown voltage was found increasing in the increase of gap and the rising of temperature according to Weibull distribution.

• 한국전기전자재료학회논문지
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• 제19권1호
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• pp.23-28
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• 2006

In this paper, breakdown voltage and on-resistance characteristics of the surface doped SOI RESURF LDMOSFET were investigated as a function of surface doping depth. In order to verify the variation of characteristics, two-dimensional device simulation was carried out. Breakdown voltage of the proposed structure is varied from $73 {\~}138V$ while surface doping depth varied from $0.5{\~}2.0{\mu}m$. And on-resistance is decreased from $0.18{\~}0.143{\Omega}/cm^2$ while surface doping depth increased from $0.5 {\~}2.0{\mu}m$. Maximum breakdown voltage of the proposed structure is 138 V at $1.5{\mu}m$ depth of surface doping, yielding $22.1\%$ of improvement of breakdown voltage in comparison with that of the conventional SOI RESURF LDMOSFET with same epi-layer concentration. On-resistance characteristic is also improved about $21.7\%$.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2008년도 제39회 하계학술대회
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• pp.1334-1335
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• 2008

Although many studies have been carried out about binary gas mixtures with $SF_6$, few studies were presented about breakdown characteristics of $SF_6/CF_4$ mixtures. At present study the breakdown characteristics of $SF_6/CF_4$ mixtures in uniform and nonuniform field was performed. The experiments were carried out under AC voltages. The sphere-sphere electrode whose gap distance was 1 mm was used and the point-plane electrode whose gap distance was 3 mm was used in a test chamber. $SF_6/CF_4$ mixture contained 20% $SF_6$ and 80% $CF_4$ and the experimental gas pressure ranged from 0.1 to 0.5 MPa. The results show that addition of $SF_6/CF_4$ mixtures increase AC breakdown voltages. In uniform field the breakdown voltages of gas were linearly increased according to the pressure. However in nonuniform field the breakdown voltages of gas were increased nonlinearly.

• 조명전기설비학회논문지
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• 제28권6호
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• pp.52-59
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• 2014

This paper deals with the effect of decomposition products which occur in breakdown of mineral oil, on the insulation characteristics of its oil. Breakdown tests in the oil were conducted by the proposed experimental methods under a quasi-uniform field and AC HV (60Hz). The breakdown voltage in the oil shows characteristics of dispersion from successive breakdowns and, it is found that there are three patterns of the decomposition products behavior at the process of breakdown progress in the oil. Finally, the breakdown voltage dispersion in the oil can be described in detail based on the behavior patterns of the decomposition products and its diffusion time.