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The Junction Termination Design Employing Shallow Trench and Field Limiting Ring for 1200 V-Class Devices  

하민우 (서울대학교 전기공학부)
오재근 (서울대학교 전기공학부)
최연익 (아주대학교 전자학과부)
한민구 (서울대학교 전기학과부)
Publication Information
The Transactions of the Korean Institute of Electrical Engineers C / v.53, no.6, 2004 , pp. 300-304 More about this Journal
Abstract
We have proposed the junction termination design employing shallow trench filled with silicon dioxide and field limiting ring (FLR). We have designed trenches between P+ FLRs to decrease the junction termination radius without sacrificing the breakdown voltage characteristics. We have successfully fabricated and measured improved breakdown voltage characteristics of the Proposed device for 1200 V-class applications. The junction termination radius of the proposed device has decreased by 15%-21% compared with that of the conventional FLR at the identical breakdown voltage. The junction termination area of the proposed device has decreased by 37.5% compared with that of the conventional FLR. The breakdown voltage of the proposed device employing 7 trenches was 1156 V, which was 80% of the ideal parallel-plane .junction breakdown voltage.
Keywords
Junction termination; Breakdown; Trench; FLR; 1200 V.;
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Times Cited By KSCI : 1  (Citation Analysis)
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