• 대한전자공학회논문지
• /
• 제24권2호
• /
• pp.248-253
• /
• 1987

Boron diffusion into silicon through poly\ulcorneri-SiO2 was carried out for the diffusion with low concentration using CVD-BN. The result of direct boron diffusion from BN into silicon and that of boron diffusion through SiO2 from BN into silicon was compared with the result of boron diffusion through poly-Si-SiO2 from BN into silicon. In the case of boron diffusion through poly Si-SiO2, the low concentration diffusion was obtained, that is the boron surface concentration in silicon Cs=10**16 Cm**-3, and the glassy compounds were not seen.

• Journal of the Korean Wood Science and Technology
• /
• 제31권3호
• /
• pp.24-29
• /
• 2003

This research was performed to investigate the diffusivity of borate rods in radiata pine (Pinus radiata D. Don) conditioned to 40 percent moisture content (MC). The deepest penetration of boron were observed in the longitudinal direction, followed by the radial and the tangential directions. The boron loading on the wood face adjacent to the borate rod tended to increase with diffusion time in all directions. To mathematically quantify boron diffusion, the diffusion coefficient of boron was determined using Boltzmann's transformation by assuming that it was a function of concentration only. The values of the longitudinal diffusion coefficients were between 1.3×10^-8 cm²/sec and 9.2×10^-8 cm²/sec. The radial diffusion coefficients were between 1.4×10^-8 cm²/sec and 9.5×10^-8 cm²/sec, and the tangential diffusion coefficients were between 5.2×10^-9 cm²/sec and 1.3×10^-8 cm²/sec. The differences of diffusion coefficients between the longitudinal direction and the radial direction were slight, although their concentration profiles were markedly different. This indicates that the amount of boron loading on the wood face adjacent the borate rod is one of the most important factor for boron penetration in wood with low MC.

• Journal of the Korean Wood Science and Technology
• /
• 제34권5호
• /
• pp.98-103
• /
• 2006

Radial and tangential diffusion coefficients of boron in wood under water leaching conditions were determined from the change of concentration profiles of boron. Egner's solution was used to obtain variable diffusion coefficients of boron because it has been known to be the only method to determine variable diffusion coefficients with no cumbersome assumption. The values of diffusion coefficients were between $0.18{\times}10^{-6}m^2/sec$ and $25.6{\times}10^{-6}cm^2/sec$. They increased with the increase of sample thicknesses, and decreased with the increase of leaching times. There was a region where Egner's method was not valid. However, Egner's solution illustrates a convenient way to evaluate diffusion characteristics of boron from wood under water leaching conditions. The diffusion coefficients at wood surface may be regarded as leaching coefficients.

• JSTS:Journal of Semiconductor Technology and Science
• /
• 제6권1호
• /
• pp.16-21
• /
• 2006

A simple doping method to fabricate a very thin channel body of the p-type FinFETs with a 20 nm gate length by solid-phase-diffusion (SPD) process was developed. Using the poly-boron-films (PBF) as a novel diffusion source of boron and the rapid thermal annealing (RTA), the p-type sourcedrain extensions of the FinFET devices with a threedimensional structure were doped. The junction properties of boron doped regions were investigated by using the $p^+-n$ junction diodes which showed excellent electrical characteristics. Single channel and multi-channel p-type FinFET devices with a gate length of 20-100 nm was fabricated by boron diffusion process using PBF and revealed superior device scalability.

• 한국전기전자재료학회논문지
• /
• 제30권3호
• /
• pp.139-143
• /
• 2017

N-type crystalline silicon solar cells have high metal impurity tolerance and higher minority carrier lifetime that increases conversion efficiency. However, junction quality between the boron diffused layer and the n-type substrate is more important for increased efficiency. In this paper, the current status and prospects for boron diffused layers in N-type crystalline silicon solar cell applications are described. Boron diffused layer formation methods (thermal diffusion and co-diffusion using $a-SiO_X:B$), boron rich layer (BRL) and boron silicate glass (BSG) reactions, and analysis of the effects to improve junction characteristics are discussed. In-situ oxidation is performed to remove the boron rich layer. The oxidation process after diffusion shows a lower B-O peak than before the Oxidation process was changed into $SiO_2$ phase by FTIR and BRL. The $a-SiO_X:B$ layer is deposited by PECVD using $SiH_4$, $B_2H_6$, $H_2$, $CO_2$ gases in N-type wafer and annealed by thermal tube furnace for performing the P+ layer. MCLT (minority carrier lifetime) is improved by increasing $SiH_4$ and $B_2H_6$. When $a-SiO_X:B$ is removed, the Si-O peak decreases and the B-H peak declines a little, but MCLT is improved by hydrogen passivated inactive boron atoms. In this paper, we focused on the boron emitter for N-type crystalline solar cells.

• 한국전기전자재료학회논문지
• /
• 제17권7호
• /
• pp.708-712
• /
• 2004

Shallow $p^+-n$ junctions were formed by ion implantation and dual-step annealing processes. The dopant implantation was performed into the crystalline substrates using BF$_2$ ions. The annealing was performed with a rapid thermal processor and a furnace. FA+RTA annealing sequence exhibited better junction characteristics than RTA+FA thermal cycle from the viewpoint of junction depth and sheet resistance. A new simulator is designed to model boron diffusion in silicon. The model which is used in this simulator takes into account nonequilibrium diffusion, reactions of point defects, and defect-dopant pairs considering their charge states, and the dopant inactivation by introducing a boron clustering reaction. Using initial conditions and boundary conditions, coupled diffusion equations are solved successfully. The simulator reproduced experimental data successfully.

• 한국자기학회지
• /
• 제18권1호
• /
• pp.32-35
• /
• 2008

차세대 반도체 산업의 발전을 위하여 반도체 소자의 구조는 DRAM, FRAM, MRAM 등 여러 분야에서 다양한 연구가 진행되고 있다. 특히 이런 차세대 반도체 소자에서 금속 배선으로는 Cu가 사용되며, Cu 금속 배선을 위한 확산방지막에 대한 연구는 반드시 필요하다[1-3]. Cu 금속 배선을 위한 확산방지막에 대한 현재까지의 연구에서는 Tungsten(W)을 기반으로 Nitride(N)를 불순물로 첨가한 확산방지막에 대하여 연구되었다[4-7]. 이러한 W-N를 기반으로 본 연구에서는 물리적 기상 증착법(PVD) 방법인 RF Magnetron Sputter 방법으로 W-N 이외에 Carbon(C) 과 Boron(B)을 첨가하여 확산방지막의 특성을 확인하였고, 특히 Boron Target의 power를 변화하여 W-B-C-N 확산방지막의 Boron에 의한 특성과 열적 안정성을 연구하였다[8-10]. 실험은 다양한 Boron의 조성을 가지는 확산방지막을 증착하여 $\beta$-ray와 4-point probe를 사용하여 확산방지막의 특성을 확인하였고, 고온($700^{\circ}C{\sim}1000^{\circ}C$) 열처리한 후 X-ray Diffraction 분석을 하여 열적 안정성을 확인하였다.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2004년도 춘계학술대회 논문집 반도체 재료 센서 박막재료 전자세라믹스
• /
• pp.30-33
• /
• 2004

Shallow p+-n junctions were formed by low-energy ion implantation and dual-step annealing processes The dopant implantation was performed into the crystalline substrates using $BF_2$ ions. The annealing was performed with a rapid thermal processor and a furnace. FA+RTA annealing sequence exhibited better junction characteristics than RTA+FA thermal cycle from the viewpoint of junction depth. A new simulator is designed to model boron diffusion in silicon, which is especially useful for analyzing the annealing process subsequent to ion implantation. The model which is used in this simulator takes into account nonequilibrium diffusion, reactions of point defects, and defect-dopant pairs considering their charge states, and the dopant inactivation by introducing a boron clustering reaction. Using a resonable parameter values, the simulator covers not only the equilibrium diffusion conditions but also the nonequilibrium post-implantation diffusion. Using initial conditions and boundary conditions, coupled diffusion equation is solved successfully. The simulator reproduced experimental data successfully.

• Journal of Welding and Joining
• /
• 제9권3호
• /
• pp.26-33
• /
• 1991

As it takes very long time for the Transient Liquid Phase(TLP) bonding, we tried to reduce the bonding time by changing insert material for the high diffusivity element. On this study boron powder was doped as a insert material on the bonding surface of Rene 80 superalloy, and diffusion treated at 1150.deg.C under vacuum. On this method differently from the TLP bonding the insert material was not melted during bonding but only the base metal reacted with the boron was inducedly melted. Therefore, as this bonding mechanism is different from the existing ones, it is suggested as a Melting Induced Diffusion Bonding. When this process was used for the diffusion bonding, the bonding time including homogenization decreased greatly compared to the conventional TLP bonding.

• 보존과학회지
• /
• 제7권2호
• /
• pp.60-67
• /
• 1998

본 연구는 붕산염 막대(borate rod)를 이용한 고건축물 부재의 부후 구제처리에 대한 기초 연구로서, 소나무와 잣나무에서 붕산염 막대로부터 붕소의 확산시 목재 함수율과 확산기간의 영향을 조사하고자 수행하였다. 함수율이 15, 25, 40%로 조성된 목재 시험편에 1,000 mg의 붕산염 막대를 삽입한 후 상온에서 2, 4, 8, 12주간 확산시키고 붕소 성분의 수축 및 횡단방향 확산정도를 평가하였다. 붕소의 원활한 확산을 위해서는 적어도 섬유포화점 이상의 목재 함수율이 요구되었으며, 또한 확산기간의 연장될수록 붕소의 확산 정도가 증가하였다. 붕소 확산의 이방성이 관찰 되었는데, 수축방향 확산이 횡단방향보다 훨씬 우수하였으며 횡단방향에서는 방사방향 확산이 접선방향보다 우수하였다. 동일 함수율과 확산기간의 조합에서도 확산 정도는 수종간에 조금씩 상이하였는데, 모든 방향에서 잣나무를 통한 확산이 가장 용이하였다. 소나무 심재를 통한 수축방향 확산이 변재를 통한 확산보다 용이하였으며, 횡단방향 확산의 경우는 큰 차이는 없었으나 변재를 통한 확산이 심재를 통한 확산보다 약간 양호하였다. 함수율 40%와 확산기간이 12주인 시험편에 대한 결과를 기준으로 할 때, 붕산염 막대의 수축방향 적정 처리간격은 소나무 심재와 잣나무 심재의 경우는 약 120 mm, 소나무 변재의 경우는 60 mm이고, 횡단방향은 수종에 관계없이 공히 약 30 mm이었다. 그러나 보다 정확한 붕산염 막대의 적정 처리간격을 구명하기 위해서는 앞으로 붕산염 막대의 크기와 장기 확산저장이 붕소 성분의 확산에 미치는 영향에 대한 보다 심도 있는 연구가 필요하다고 생각된다.