• 마이크로전자및패키징학회지
• /
• 제24권1호
• /
• pp.17-25
• /
• 2017

Recently, research and application for a power module have been actively studied according to the increasing demand for the production of vehicles, smartphones and semiconductor devices. The power modules based on the transient liquid phase (TLP) technology for bonding of power semiconductor devices have been introduced in this paper. The TLP bonding has been widely used in semiconductor packaging industry due to inhibiting conventional Pb-base solder by the regulation of end of life vehicle (ELV) and restriction of hazardous substances (RoHS). In TLP bonding, the melting temperature of a joint layer becomes higher than bonding temperature and it is cost-effective technology than conventional Ag sintering process. In this paper, a variety of TLP bonding technologies and their characteristics for bonding of power module have been described.

• 한국의류산업학회지
• /
• 제11권3호
• /
• pp.474-480
• /
• 2009

The purpose of this study is to prepare the hardness of polyester(PET) fabric by thermal bonding with low melting component of bicomponent fiber and to describe the change of physical properties of thermal bonded PET fabrics. The PET fabrics were prepared with regular PET fiber as warp and bicomponent fiber as weft. The bicomponent fiber of sheath-core type were composed with a regular PET core and low melting PET sheath. The thermal bonding of PET fabric was carried out in pin tenter from 120 to $195^{\circ}C$ temperature range for 60 seconds. In this study, we investigated the physical properties and melting behavior of PET fiber and the effect of the temperature of the pin tenter on the thermal bonding, mechanical properties. Melting peak of warp showed the thermal behavior of general PET fiber. However, melting peak of weft fiber(bicomponent fiber) showed the double melting peak. The thermal bonding of the PET fabric formed at about temperature of lower melting peak. The optimum thermal bonding conditions for PET fabrics was applied at $190{\sim}195^{\circ}C$ for 60seconds by pin tenter. On the other hand, the tensile strength of the PET fabric decreased with an increasing temperature of thermal bonding.

• 한국정밀공학회지
• /
• 제27권7호
• /
• pp.21-27
• /
• 2010

The effect of COG bonding parameters, especially the bonding temperature, on the bonding quality and reliability was investigated in this paper. We measured the bubble area formed in the ACF resin during the bonding process and tried to investigate the relationship between bubble area and bonding peel strength. 85/85 test which exposes a sample to a 85% humidity and $85^{\circ}C$ temperature condition was also carried out. The bubble area was dramatically increased under ~$10^{\circ}C$ lower than recommended bonding temperature. The bubble area formed at the edge of IC chip was larger than the other parts of IC chip. But the peel strength was not associated with the bubble area. High temperature and humid condition made the bubble area larger, but we could not find clear trend of change in the peel strength.

• 설비공학논문집
• /
• 제27권2호
• /
• pp.87-93
• /
• 2015

Recently, the heat exchangers are requiring higher performance and reliability since they are being used under the operating condition of high temperature and pressure. To satisfy these requirements, we need special materials and bonding technology. This study presents a manufacturing technology for high temperature and high pressure micro channel heat exchanger using Inconel 617. The bonding performance for diffusion bonded heat exchanger was examined and analyzed. The analysis were conducted by measuring thermal and mechanical properties such as thermal diffusivity and tensile strength, and parametric studies about bonding temperature and pressing force were also carried out. The results provided insight for bonding evaluation and the bonding condition of $1200^{\circ}C$, and 50 tons was found to be suitable for this heat exchanger. From the results, we were able to establish the base technology for the manufacturing of Inconel 617 heat exchanger through the application of the diffusion bonding.

• ETRI Journal
• /
• 제37권5호
• /
• pp.951-960
• /
• 2015

For a conventional power metal-oxide-semiconductor field-effect transistor (MOSFET), there is a trade-off between specific on-state resistance and breakdown voltage. To overcome this trade-off, a super-junction trench MOSFET (TMOSFET) structure is suggested; within this structure, the ability to sense the temperature distribution of the TMOSFET is very important since heat is generated in the junction area, thus affecting its reliability. Generally, there are two types of temperature-sensing structures-diode and resistive. In this paper, a diode-type temperature-sensing structure for a TMOSFET is designed for a brushless direct current motor with on-resistance of $96m{\Omega}{\cdot}mm^2$. The temperature distribution for an ultra-low on-resistance power MOSFET has been analyzed for various bonding schemes. The multi-bonding and stripe bonding cases show a maximum temperature that is lower than that for the single-bonding case. It is shown that the metal resistance at the source area is non-negligible and should therefore be considered depending on the application for current driving capability.

• 한국재료학회지
• /
• 제5권2호
• /
• pp.191-196
• /
• 1995

비정질 PEEK 필름의 self-bonding강도는 접합시의 공정변수(시간, 온도, 그리고 압력)와 밀접한 관계가 있다. 본 연구에서는 이러한 공정변수의 효과를 규명하기 위하여 각기 다른 접합조건하에서 개발된 시편들의 self-bonding강도를 single lap-shear test를 통하여 측정된 각각의 전단 응력(shear strength)으로 나타내었다. 개발된 self-bonding강도는 접합온도가 증가함에 따라 증가하였으며, 접합시간의 1/4승에 일차함수적으로 비례증가하였다. 접합공정 중의 압력의 효과는 단지 초기 접합단계인 wetting에 기여하였을 뿐 self-bonding강도 자체에는 거의 영향을 미치지 않는 것으로 사려되었다. 결론적으로 비정질 PEEK 필름의 self-bonding현상은 현장에서의 실제 접합공정에서 어떠한 접착재료의 사용없이도 모재와 같은 강도를 개발하는데 무한한 가능성이 있는 것으로 판단되었다.

• 한국재료학회지
• /
• 제16권2호
• /
• pp.99-105
• /
• 2006

This paper reports an improved bonding method using the IPA (isopropyl alcohol) assisted low-temperature bonding process for the PMMA (polymethylmethacrylate) micro CE (capillary electrophoresis) chip. There is a problem about channel deformations during the conventional processes such as thermal bonding and solvent bonding methods. The bonding test using an IPA showed good results without channel deformations over 4 inch PMMA wafer at $60^{\circ}C$ and 1.3 bar for 10 minutes. The mechanism of IPA bonding was attributed to the formation of a small amount of vaporized acetone made from the oxidized IPA which allows to solvent bonding. To verify the usefulness of the IPA assisted low-temperature bonding process, the PMMA micro CE chip which had a $45{\mu}m$ channel height was fabricated by hot embossing process. A functional test of the fabricated CE chip was demonstrated by the separation of fluorescein and dichlorofluorescein. Any leakage of liquids was not observed during the test and the electropherogram result was successfully achieved. An IPA assisted low-temperature bonding process could be an easy and effective way to fabricate the PMMA micro CE chip and would help to increase the yield.

• Journal of Welding and Joining
• /
• 제29권6호
• /
• pp.65-70
• /
• 2011

The effect of flip chip bonding parameters on formation of intermetallic compounds (IMCs) between Au stud bumps and Sn-3.5Ag solder was investigated. In this study, flip chip bonding temperature was performed at $260^{\circ}C$ and $300^{\circ}C$ with various bonding times of 5, 10, and 20 sec. AuSn, $AuSn_2$ and $AuSn_4$ IMCs were formed at the interface of joints and (Au, Cu)$_6Sn_5$ IMC was observed near Cu pad side in the joint. At bonding temperature of $260^{\circ}C$, $AuSn_4$ IMC was dominant in the joint compared to other Au-Sn IMCs as bonding time increased. At bonding temperature of $300^{\circ}C$, $AuSn_2$ IMC clusters, which were surrounded by $AuSn_4$ IMC, were observed in the solder joint due to fast diffusivity of Au to molten solder with increased bonding temperature. Bond strength of Au stud bump joined with Sn-3.5Ag solder was about 23 gf/bump and fracture mode of the joint was intergranular fracture between $AuSn_2$ and $AuSn_4$ IMCs regardless bonding conditions.

• Journal of Welding and Joining
• /
• 제22권1호
• /
• pp.77-82
• /
• 2004

The effect of bonding condition on tensile properties of joints diffusion bonded spheroidal graphite cast iron, FCD60 to Cr-Mo steel, SCM 440 was investigated. Diffusion bonding was performed with various temperatures, holding times, pressures and atmospheres. All tensile specimens were fractured at the bonding interface. The tensile strength and elongation was increased with increasing bonding temperature. Especially, tensile strength of joints bonded at 1123K was higher than that of a raw material, FCD60, and tensile strength of joints bonded at 1173K was equal to that of a raw material, SCM440, but elongation of all joints was lower than those of raw materials. There was little the effect of holding time on the tensile properties. In comparison with bonding atmosphere, the difference of tensile strength was not observed, but elongation of joint bonded at vacuum(6.7mPa and 67mPa) was higher than that of Ar gas. Higher the degee of vacuum, elongation increased. Tensile properties of diffusion bonds depended on microstructures of cast iron at the interface and void ratio. Microstructures of cast iron at interface changed with temperature, because decarburizing and interdiffusion at the interface occurs and transformation of austenite-1 ferrite + graphite occurs on the cooling process. The void ratio decreased with increasing temperature, especially, effected on the elongation.

• 한국표면공학회지
• /
• 제54권5호
• /
• pp.207-212
• /
• 2021

The mechanical and electrical characteristics can be improved in 3D stacked IC technology which can accomplish the ultra-high integration by stacking more semiconductor chips within the limited package area through the Cu direct bonding method minimizing the performance degradation to the bonding surface to the inorganic compound or the oxide film etc. The surface was treated in a ultrasonic washer using a diamond abrasive to remove other component substances from the prepared cast plate substrate surface. FE-SEM was used to analyze the bonding characteristics of the bonded copper substrates, and the cross section of the bonded Cu conjugates at the sintering junction temperature of 100 ℃, 150 ℃, 200 ℃, 350 ℃ and the pressure of 2303 N/cm² and 3087 N/cm². At 2303 N/cm², the good bonding of copper substrate was confirmed at 350 ℃, and at the increased pressure of 3087 N/cm², the bonding condition of Cu was confirmed at low temperature junction temperature of 200 ℃. However, the recrystallization of Cu particles was observed due to increased pressure of 3087 N/cm² and diffusion of Cu atoms at high temperature of 350 ℃, which can lead to degradation in semiconductor manufacturing.