• Korean Journal of Metals and Materials
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• v.46 no.3
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• pp.159-168
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• 2008

Thermally-evaporated 10 nm-Ni/1 nm-Ru/(30 nm or 70 nm-poly)Si structures were fabricated in order to investigate the thermal stability of Ru-inserted nickel monosilicide. The silicide samples underwent rapid thermal anne aling at $300{\sim}1,100^{\circ}C$ for 40 seconds. Silicides suitable for the salicide process were formed on the top of the single crystal and polycrystalline silicon substrates mimicking actives and gates. The sheet resistance was measured using a four-point probe. High resolution X-ray diffraction and Auger depth profiling were used for phase and chemical composition analysis, respectively. Transmission electron microscope and scanning probe microscope(SPM) were used to determine the cross-sectional structure and surface roughness. The silicide, which formed on single crystal silicon and 30 nm polysilicon substrate, could defer the transformation of $Ni_2Si $i and $NiSi_2 $, and was stable at temperatures up to $1,100^{\circ}C$ and $1,100^{\circ}C$, respectively. Regarding microstructure, the nano-size NiSi preferred phase was observed on single crystalline Si substrate, and agglomerate phase was shown on 30 nm-thick polycrystalline Si substrate, respectively. The silicide, formed on 70 nm polysilicon substrate, showed high resistance at temperatures >$700^{\circ}C$ caused by mixed microstructure. Through SPM analysis, we confirmed that the surface roughness increased abruptly on single crystal Si substrate while not changed on polycrystalline substrate. The Ru-inserted nickel monosilicide could maintain a low resistance in wide temperature range and is considered suitable for the nano-thick silicide process.

• Korean Journal of Metals and Materials
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• v.48 no.2
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• pp.133-140
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• 2010

10 nm thick Ni layers were deposited on 200 nm $SiO_2/Si$ substrates using an e-beam evaporator. Then, 60 nm or 20 nm thick ${\alpha}$-Si:H layers were grown at low temperature (<$200^{\circ}C$) by a Catalytic-CVD. NiSi layers were already formed instantaneously during Cat-CVD process regardless of the thickness of the $\alpha$-Si. The resulting changes in sheet resistance, microstructure, phase, chemical composition, and surface roughness with the additional rapid thermal annealing up to $500^{\circ}C$ were examined using a four point probe, HRXRD, FE-SEM, TEM, AES, and SPM, respectively. The sheet resistance of the NiSi layer was 12${\Omega}$/□ regardless of the thickness of the ${\alpha}$-Si and kept stable even after the additional annealing process. The thickness of the NiSi layer was 30 nm with excellent uniformity and the surface roughness was maintained under 2 nm after the annealing. Accordingly, our result implies that the low temperature Cat-CVD process with proposed films stack sequence may have more advantages than the conventional CVD process for nano scale NiSi applications.

• Journal of the Semiconductor & Display Technology
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• v.21 no.2
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• pp.85-89
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• 2022

We reported on annealing effect on Ga₂O₃/Al₂O₃/SiC devices grown by radio frequency sputtering method. Post-deposition annealing at 900 ℃ was performed, which results in crystallization in the Ga₂O₃ films. The major peaks (-401) and (403) of Ga₂O₃ which was thermally treated at 900 ℃ appears in the x-ray diffraction (XRD) results. Auger electron spectroscopy (AES) shows that Ga and Al atoms seems to be diffused into the opposite direction Al₂O₃ and Ga₂O₃ after annealing. Transfer and output characteristics of back-gate transistor were analyzed where SiC substrate is used as gate material. On-state current and on/off ratio increased almost 10⁹ and 10⁶ times higher in the 900 ℃ annealed sample.

• Journal of the Korean Geotechnical Society
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• v.38 no.11
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• pp.97-106
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• 2022

The domestic auger-drilled pile method generally manages the driving penetration (set) value with the final stage of construction. The penetration value has been estimated by manual measurement for a long time. The automation technology is yet to be applied due to workability and high-cost limitations, despite safety issues and lack of reliability in measured results. In this study, a non-contact pile penetration measurement device was developed. Further, the field performance was verified by comparing the measurements with a conventional automation device. In addition, the on-site field quality control method was analyzed using the penetration measuring device. The field experiments confirmed that more reliable bearing capacity estimation could calculate the dynamic damping coefficient and the modified Hiley formula with the developed device. Furthermore, it can be used for pile construction management from the bearing capacity viewpoint, even for piles not subjected to dynamic load tests. 

• Korean Journal of Agricultural Science
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• v.49 no.2
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• pp.239-247
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• 2022

The physico-chemical properties of agricultural soil are factors that affect crop productivity and soil fertility. In Korea, agricultural environment change surveys have been conducted every four years since 1999. The purpose of this study is to investigate the status and changes in the physico-chemical properties of agricultural soil in Chungcheongnam-do. Samples were collected from the exact location of the aforementioned environment survey, and environmental variables (land use, type of crop cultivated) were investigated in relation to the samples. Soil collection was conducted using a core sampler and a single gouge auger. The bulk density of the soil generally increased up to a depth of sampling of 40 cm but decreased thereafter to a depth of 60 cm. Additionally, the bulk density was highest in the upland soil case and stood at 1.59 g·cm^-3, while the lowest value of 1.52 g·cm^-3 was obtained from orchard soil samples. Conversely, the porosity and moisture gradually decreased at soil depths of 0 - 40 cm and increased at depths of 40 - 60 cm. Most of the soil chemical properties generally decreased with an increase the soil depth from 0 to 70 cm, but electrical conductivity (EC) increased up to a depth of 40 cm. Therefore, it is judged that it is necessary to lower the bulk density by supplying organic matter for agricultural land in Chungcheongnam-do.

• Korean Journal of Materials Research
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• v.2 no.6
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• pp.408-416
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• 1992

Stable TiS$i_2$was formed by RTA on single-Si and on poly-Si. Subsequently, an Al-1% Si layer with 600-nm thick was deposited on top of the TiS$i_2$, Finally, the specimens were annealed for 30min at 400-60$0^{\circ}C$in $N_2$ambient. The thermal stability of Al-1% Si/TiS$i_2$bilayer and interfacial reaction were investigated by measuring sheet resistance, Auger electron spectroscopy (AES), and scanning electron microscopy (SEM). The composition and phase of precipitates formed by the reaction of Al-1% Si with Ti-silicide were studied by energy dispersive spectroscopy (EDS), X-ray diffraction (XRD). In the case of single-Si substrate the reaction of Al-1% Si layer with TiS$i_2$layer resulted in precipitates, consuming all TiS$i_2$layer at 55$0^{\circ}C$. On the other hand, the disappearance of TiS$i_2$on poly-Si occurred at 50$0^{\circ}C$ and more precipitates were formed by the reaction of Al-1% Si/TiS$i_2$on potty-Si substrate than those of the reaction on single-Si substrate. This phenomenon resulted from the fact that Ti-silicide formed on poly-Si was more unstable than on single-Si by the effect of grain boundary. By EDS analysis the precipitates were found tobe composed of Ti, Al, and Si. X-ray diffraction showed the phase of precipitates to be theT$i_7$A$l_5$S$i_12$ternary compound.

• Journal of Biomedical Engineering Research
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• v.25 no.2
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• pp.157-163
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• 2004

Nitrogen ion implantation and ion plating techniques were applied for improvement of the wear resistance of metallic implant materials. In this work, the wear dissolution behaviour of a nitrogen ion implanted super stainless steel (S.S.S, 22Cr-20Ni-6Mo-0.25N) was compared with those of S.S.S, 316L SS and TiN coated 316L SS. The amounts of Cr and Ni ions worn-out from the specimens were Investigated using an electrothermal atomic absorption spectrometry. Furthermore, the Ti(Grade 2) disks were coated with TiN, ZrN and TiCN by use of low temperature arc vapor deposition and the wear resistance of the coating layers was compared with that of titanium. The chemical compositions of the nitrogen ion implanted and nitride coated layers were examined with a scanting auger electron spectroscopy. It wat observed that the metal ions released from the nitrogen ion implanted S.S.S surface were significantly reduced. From the results obtained, it was shown that the nitrogen ion implanted zone obtained with 100 KeV ion energy was easily removed within 200,000 revolutions from a wear dissolution testing under a similar load condition when applied to artificial hip joint. The remarkable improvement in wear resistance weir confirmed by the nitrides coated Ti materials and the wear properties differ greatly according to the chemical composition of the coating layers. for specimens with the same coating thickness of about 3$\mu\textrm{m}$, TiCN coated Ti showed the highest wear resistance. However, after removing the coating layers, the wear rates of all nitrides coated Ti reverted to their normal rates of below 10,000 revolutions from Ti-disk-on-disk wear testing under the same load condition. From the results obtained, it is suggested that the insufficient depth of the 100 Kel N$\^$＋/ ion implanted zone and of the nitrides coated layers of 3$\mu\textrm{m}$ are subject to restriction when used as frictional parts of load bearing implants.

• Journal of the Korean Vacuum Society
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• v.21 no.6
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• pp.333-341
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• 2012

Indium Tin Oxide (ITO) thin films were prepared by RF magnetron sputtering with different flow rates of $O_2$ gas from 0 to 12 sccm. Electrical and optical properties of these films were characterized and analyzed. ITO deposited on soda lime glass and RF power was 2 kW, frequency was 13.56 MHz, and working pressure was $1.0{\times}10^{-3}$ Torr, Ar gas was fixed at 1,000 sccm. The transmittance was measured at 300~1,100 nm ranges by using Photovoltaic analysis system. Electrical properties were measured by Hall measurement system. ITO thin films surface were measured by Scanning electron microscope. Atomic force microscope surface roughness scan for ITO thin films. ITO thin films secondary electron emission coefficient(${\gamma}$) was measured by ${\gamma}$-Focused ion beam. The resistivity is about $2.4{\times}10^{-4}{\Omega}{\cdot}cm$ and the weighted average transmittance is about 84.93% at 3 sccm oxygen flow rate. Also, we investigated Work-function of ITO thin films by using Auger neutralization mechanism according to secondary electron emission coefficient(${\gamma}$) values. We confirmed secondary electron emission peak at 3 sccm oxygen flow rate.

• Transactions of the Korean hydrogen and new energy society
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• v.10 no.2
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• pp.119-130
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• 1999

After preparing $Mg_2Ni_{1-x}{^{57}}Fe_x$(x=0.015, 0.03, 0.06, 0.12 and 0.24) alloys, they were studied by $M{\ddot{o}}ssbauer$ resonance. The $M{\ddot{o}}ssbauer$ spectra of x=0.015 and 0.03 alloys exhibit two doublets (doublet 1, 2). That of x=0.06 alloys shows two doublets (doublet 1,2) and one six-line, and those of x=0.12 and 0.24 alloys have only one six-line. The doublet 1 for x=0.015, 0.03 and 0.06 alloys is considered to result from a fraction of Fe in excess showing a superparamagnetic behavior. The doublet 2 is considered to result from the Fe substituted for Ni in the $Mg_2Ni$ phase. The values of isomer shift 0.24 ~ 0.28 mm/s suggest that the iron exist in the state $Fe^{+3}$. The result that the quadrapole splitting of the doublet 2 is not zero shows that the distribution of electrons around the iron is asymmetric. Their values for the doublet 2, 1.20 ~ 1.38 mm/s, approach the value of quadrapole for the oxidation number +3. The six-line showing the magnetic hyperfine interactions results from the iron which has not substituted the nickel in the $Mg_2Ni$ phase. The $M{\ddot{o}}ssbauer$ spectra of the hydrided alloys with x=0.015 and 0.03 show six-line. This suggests that the iron segregates with the hydriding reaction. The analysis results of the $M{\ddot{o}}ssbauer$ spectrum, the variation of magnetization with magnetic field, Auger electron spectroscopy and electron diffraction show the segregation of Ni and the formation of MgO. This is considered to result from the reaction of the $Mg_2Ni$ phase with the oxygen contained in the hydrogen as impurity.

• Applied Chemistry for Engineering
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• v.17 no.4
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• pp.349-356
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• 2006

We have investigated adsorption and desorption properties of CO adsorption on silica supported Ru/Ni alloys at various Ru/Ni mole content ratio as well as CO partial pressures using Fourier transform infrared spectrometer (FT-IR). For Ru-$SiO_{2}$ sample, four bands were observed at $2080.0cm^{-1}$, $2021.0{\sim}2030.7cm^{-1}$, $1778.9{\sim}1799.3cm^{-1}$, $1623.8cm^{-1}$ on adsorption and three bands were observed at $2138.7cm^{-1}$, $2069.3cm^{-1}$, $1988.3{\sim}2030.7cm^{-1}$ on vacumn desorption. For Ni-$SiO_{2}$ sample, four bands were observed at $2057.7cm^{-1}$, $2019.1{\sim}2040.3cm^{-1}$, $1862.9{\sim}1868.7cm^{-1}$, $1625.7cm^{-1}$ on adsorption and two bands were observed at $2009.5{\sim}2040.3cm^{-1}$, $1828.4{\sim}1868.7cm^{-1}$ on vacumn desorption. These absorption bands correspond with those of the previous reports approximately. For Ru/Ni(9/1, 8/2, 7/3, 6/4, 5/5; mole content ratio)-$SiO_{2}$ samples, three bands were observed at $2001.8{\sim}2057.7cm^{-1}$, $1812.8{\sim}1926.5cm^{-1}$, $1623.8{\sim}1625.7cm^{-1}$ on adsorption and three bands were observed at $2140.6cm^{-1}$, $2073.1cm^{-1}$, $1969.0{\sim}2057.7cm^{-1}$ on vacumn desorption. The spectrum pattern observed for Ru/Ni-$SiO_{2}$ sample at 9/1 Ru/Ni mole content ratio on CO adsorption and on vacumn desorption is almost like the spectrum pattern observed for Ru-$SiO_{2}$ sample. But the spectrum patterns observed for Ru/Ni-$SiO_{2}$ samples under 8/2 Ru/Ni mole content ratio on CO adsorption and vacumn desorption are almost like the pattern observed for $Ni-SiO_{2}$ sample. It may be suggested surfaces of alloy clusters on the Ru/Ni-$SiO_{2}$ samples contain more Ni components than the mole content ratio of the sample considering the above phenomena. With Ru/Ni-$SiO_{2}$ samples the absorption band shifts may be ascribed to variations of surface concentration, strain variation due to atomic size difference, variation of bonding energy and electronic densities, and changes of surface geometries according to surface concentration variation. Studies for CO adsorption on Ru/Ni alloy cluster surface by LEED and Auger spectroscopy, interation between Ru/Ni alloy cluster and $SiO_{2}$, and MO calculation for the system would be needed to look into the phenomena.