Journal of the Semiconductor & Display Technology (반도체디스플레이기술학회지)

The Korean Society Of Semiconductor & Display Technology (한국반도체디스플레이기술학회)
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Effect of Annealing on Ga2O3/Al2O3/SiC Devices Fabricated by RF Sputtering

어닐링이 RF 스퍼터링으로 제작된 Ga2O3/Al2O3/SiC 소자에 미치는 영향 연구

  • Lee, Hee-Jae (Department of Electronic Materials Engineering, Kwangwoon University) ;
  • Kim, Min-Yeong (Department of Electronic Materials Engineering, Kwangwoon University) ;
  • Moon, Soo-Young (Department of Electronic Materials Engineering, Kwangwoon University) ;
  • Byun, Dong-Wook (Department of Electronic Materials Engineering, Kwangwoon University) ;
  • Jung, Seung-Woo (Department of Electronic Materials Engineering, Kwangwoon University) ;
  • Koo, Sang-Mo (Department of Electronic Materials Engineering, Kwangwoon University)
  • 이희재 (광운대학교 전자재료공학과) ;
  • 김민영 (광운대학교 전자재료공학과) ;
  • 문수영 (광운대학교 전자재료공학과) ;
  • 변동욱 (광운대학교 전자재료공학과) ;
  • 정승우 (광운대학교 전자재료공학과) ;
  • 구상모 (광운대학교 전자재료공학과)
  • Received : 2022.06.07
  • Accepted : 2022.06.23
  • Published : 2022.06.30
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Abstract

We reported on annealing effect on Ga2O3/Al2O3/SiC devices grown by radio frequency sputtering method. Post-deposition annealing at 900 ℃ was performed, which results in crystallization in the Ga2O3 films. The major peaks (-401) and (403) of Ga2O3 which was thermally treated at 900 ℃ appears in the x-ray diffraction (XRD) results. Auger electron spectroscopy (AES) shows that Ga and Al atoms seems to be diffused into the opposite direction Al2O3 and Ga2O3 after annealing. Transfer and output characteristics of back-gate transistor were analyzed where SiC substrate is used as gate material. On-state current and on/off ratio increased almost 109 and 106 times higher in the 900 ℃ annealed sample.

Keywords

Acknowledgement

This work was supported by Technology Innovation Program (20016102) grant by MOTIE, the Korea Institute of Energy Technology Evaluation and Planning (KETEP) and the Ministry of Trade, Industry & Energy(MOTIE) of the Republic of Korea (20214000000700) funded by the Korea Government, and the Excellent researcher support project of Kwangwoon University in 2022.

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