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Effect of Annealing on Ga2O3/Al2O3/SiC Devices Fabricated by RF Sputtering  

Lee, Hee-Jae (Department of Electronic Materials Engineering, Kwangwoon University)
Kim, Min-Yeong (Department of Electronic Materials Engineering, Kwangwoon University)
Moon, Soo-Young (Department of Electronic Materials Engineering, Kwangwoon University)
Byun, Dong-Wook (Department of Electronic Materials Engineering, Kwangwoon University)
Jung, Seung-Woo (Department of Electronic Materials Engineering, Kwangwoon University)
Koo, Sang-Mo (Department of Electronic Materials Engineering, Kwangwoon University)
Publication Information
Journal of the Semiconductor & Display Technology / v.21, no.2, 2022 , pp. 85-89 More about this Journal
Abstract
We reported on annealing effect on Ga2O3/Al2O3/SiC devices grown by radio frequency sputtering method. Post-deposition annealing at 900 ℃ was performed, which results in crystallization in the Ga2O3 films. The major peaks (-401) and (403) of Ga2O3 which was thermally treated at 900 ℃ appears in the x-ray diffraction (XRD) results. Auger electron spectroscopy (AES) shows that Ga and Al atoms seems to be diffused into the opposite direction Al2O3 and Ga2O3 after annealing. Transfer and output characteristics of back-gate transistor were analyzed where SiC substrate is used as gate material. On-state current and on/off ratio increased almost 109 and 106 times higher in the 900 ℃ annealed sample.
Keywords
$Ga_2O_3$; SiC; transistor; annealing; heterojunction;
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