• Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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• 2004.05a
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• pp.73-76
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• 2004

Tapping mode atomic force microscopy (TM-AFM) utilizes the dynamic response of a resonating probe tip as it approaches and retracts from a sample to measure the topography and material properties of a nanostructure. We present recent results based on numerical techniques that yield new perspectives and insight into AFM. It is compared that the dynamic models including van der Waals and Derjaguin-Muller-Toporov(DMT) or Johnson-Kendall-Roberts(JKR) contact forces demonstrates that periodic solutions can be represented with respect to the approach distance and excitation frequency.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.4
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• pp.294-297
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• 2012

In this work, local oxidation behavior in phosphorous ion-implanted 4H-SiC has been investigated by using atomic force microscopy (AFM). The AFM-local oxidation (AFM-LO) has been performed on the implanted samples, with and without activation anneal, using an applied bias (~25 V). It has been clearly shown that the post-implantation annealing process at $1,650^{\circ}C$ has a great impact on the local oxidation rate by electrically activating the dopants and by modulating the surface roughness. In addition, the composition of resulting oxides changes depending on the doping level of SiC surfaces.

• Proceedings of the KSME Conference
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• 2003.11a
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• pp.1560-1565
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• 2003

Tapping mode atomic force microscopy (TM-AFM) utilizes the dynamic response of a resonating probe tip as it approaches and retracts from a sample to measure the topography and material properties of a nanostructure. We present recent results based on nonlinear dynamical systems theory, computational continuation techniques and detailed experiments that yield new perspectives and insight into AFM. A dynamic model including van der Waals and Derjaguin-Muller-Toporov (DMT) contact forces demonstrates that periodic solutions can be represented with respect to the approach distance and excitation frequency. Turning points on the surface lead to hysteretic amplitude jumps as the tip nears/retracts from the sample. Experiments are performed using a tapping mode tip on a graphite sample to verify the predictions.

• Transactions of the Korean Society for Noise and Vibration Engineering
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• v.20 no.4
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• pp.414-421
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• 2010

The proper orthogonal decomposition(POD) is used to the vibration analysis of microcantilever in tapping mode atomic force microscopy(AFM). The proper orthogonal modes (POM) are extracted from vibrating signals of microcantilever when it resonates and taps the sample. We present recent ideas based on POD and detailed experiments that yield new perspectives into the microscale structures such as the tapping cantilever. The linearized modeling technique based on POD is very useful to show the principal characteristics of the complex dynamic responses of the AFM microcantilever.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.64-64
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• 2009

Atomic force microscopy (AFM) fabrication of oxide patterns is an attractive technique for nanoscale patterns and related device structures, SiC exhibits good performance in high-power, high-frequency, and high-temperature conditions that is comparable to the performance of Si. The AFM fabrication of oxide patterns on SiC is important for electronic applications. However, there has not been much reported investigations on oxidation of SiC using AFM. We achieved the local oxidation of 4H-SiC using the high loading force of ~100 nN, although the oxidation of SiC is generally difficult mainly due to the physical hardness and chemical inactivity. All the experiments were performed using atomic force microscopy (S.I.S. GmbH, Germany) with a Pt/Ir-coated Si tip at ~40% humidity and room temperature. The spring constant and resonance frequency of the tip were around ~3 N/m and ~70 kHz. We fabricated oxide patterns on n-type 4H-SiC ($\sim10^{19}/cm^3$) and n-type Si ($\sim1.9\times10^{16}/cm^3$). In summary, we demonstrated that the oxide patterns can be obtained over the electric field of ${\sim}\times10^7 V/cm$ and the high loading force using the tip as a cathode. The electric field transports the oxyanions (OH-) to the positively biased surface.

• Applied Microscopy
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• v.50
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• pp.28.1-28.6
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• 2020

Contamination on two-dimensional (2D) crystal surfaces poses serious limitations on fundamental studies and applications of 2D crystals. Surface residues induce uncontrolled doping and charge carrier scattering in 2D crystals, and trapped residues in mechanically assembled 2D vertical heterostructures often hinder coupling between stacked layers. Developing a process that can reduce the surface residues on 2D crystals is important. In this study, we explored the use of atomic force microscopy (AFM) to remove surface residues from 2D crystals. Using various transmission electron microscopy (TEM) investigations, we confirmed that surface residues on graphene samples can be effectively removed via contact-mode AFM scanning. The mechanical cleaning process dramatically increases the residue-free areas, where high-resolution imaging of graphene layers can be obtained. We believe that our mechanical cleaning process can be utilized to prepare high-quality 2D crystal samples with minimum surface residues.

• Journal of Microbiology and Biotechnology
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• v.19 no.6
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• pp.547-555
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• 2009

Nanoscopic changes in the cell surface morphology of the yeasts Saccharomyces cerevisiae (strain NCYC 1681) and Schizosaccharomyces pombe (strain DVPB 1354), due to their exposure to varying concentrations of hydrogen peroxide (oxidative stress), were investigated using an atomic force microscope (AFM). Increasing hydrogen peroxide concentration led to a decrease in cell viabilities and mean cell volumes, and an increase in the surface roughness of the yeasts. In addition, AFM studies revealed that oxidative stress caused cell compression in both S. cerevisiae and Schiz. pombe cells and an increase in the number of aged yeasts. These results confirmed the importance and usefulness of AFM in investigating the morphology of stressed microbial cells at the nanoscale. The results also provided novel information on the relative oxidative stress tolerance of S. cerevisiae and Schizo pombe.

• Journal of the Society of Cosmetic Scientists of Korea
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• v.45 no.4
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• pp.373-380
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• 2019

There are many differences in tran-epidermal water loss (TEWL), skin water contents, and skin elasticity, etc between face and forearm skin. In particular, our previous studies showed that elasticity of face skin was significantly differed from forearm depending on full hydration. So, we have studied the surface properties of corneocyte using atomic force microscopy (AFM), assuming that the differences between face and forearm skin would be associated with the surface properties of corneocyte. The surface roughness of corneocyte and villus-like projections (VPs) were measured. Furthermore, qualitative comparison among the surface of face, forearm, and lip corneocyte was performed. Corneocytes were collected by tape-stripping on both face and forearm of 8 volunteers, and the bottom surface of corneocytes were measured at 40 ㎛ × 40 ㎛ using AFM. Results showed that the lower surface roughness of face corneocytes was 388.34 ± 86.189 nm, and that of forearm corneocytes was 662.27 ± 224.257 nm, which confirmed that the lower surface of forearm corneocytes was more rough than that of face corneocytes (p < 0.001). Compared with the amount of VPs, lip corneocytes were the highest followed by face corneocytes, and forearm corneocytes were the lowest. From these results, it is conclued that the surface properties of corneocytes are somewhat involved in the property differences between the face and the forearm skin and VPs can be a useful parameter for the study of corneocyte by site. In addition, AFM is a very useful device for the comparative study of nano-structural differences on the surface of corneocytes. More studies can lead to develop a new evaluation method of corneocytes.

• Journal of the Korean Society for Precision Engineering
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• v.19 no.3
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• pp.13-18
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• 2002

• Korean Journal of Materials Research
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• v.28 no.11
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• pp.680-684
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• 2018

We investigate the effect of light intensity and wavelength of a solar cell device using photoconductive atomic force microscopy(PC-AFM). A $POCl_3$ diffusion doping process is used to produce a p-n junction solar cell device based on a polySi wafer, and the electrical properties of prepared solar cells are measured using a solar cell simulator system. The measured open circuit voltage($V_{oc}$) is 0.59 V and the short circuit current($I_{sc}$) is 48.5 mA. Moreover, the values of the fill factors and efficiencies of the devices are 0.7 and approximately 13.6 %, respectively. In addition, PC-AFM, a recent notable method for nano-scale characterization of photovoltaic elements, is used for direct measurements of photoelectric characteristics in limited areas instead of large areas. The effects of changes in the intensity and wavelength of light shining on the element on the photoelectric characteristics are observed. Results obtained through PC-AFM are compared with the electric/optical characteristics data obtained through a solar simulator. The voltage($V_{PC-AFM}$) at which the current is 0 A in the I-V characteristic curves increases sharply up to $18W/m^2$, peaking and slowly falling as light intensity increases. Here, $V_{PC-AFM}$ at $18W/m^2$ is 0.29 V, which corresponds to 59 % of the average $V_{oc}$ value, as measured with the solar simulator. Furthermore, while the light wavelength increases from 300 nm to 1,100 nm, the external quantum efficiency(EQE) and results from PC-AFM show similar trends at the macro scale but reveal different results in several sections, indicating the need for detailed analysis and improvement in the future.