• Proceedings of the Korean Magnestics Society Conference
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• 2007.05a
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• pp.316.2-316.2
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• 2007

• Proceedings of the Korean Magnestics Society Conference
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• 2011.12a
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• pp.183-183
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• 2011

• JSTS:Journal of Semiconductor Technology and Science
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• v.4 no.4
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• pp.312-317
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• 2004

High dose ($3{\times}10^{16}cm^{-2}$) implantation of Fe or Ni ions into bulk, single-crystal ZnO substrates was carried out at substrate temperature of ${\sim}350^{\circ}C$ to avoid amorphization of the implanted region. The samples were subsequently annealed at $700^{\circ}C$ to repair some of the residual implant damage. X-Ray Diffraction did not show any evidence of secondary phase formation in the ZnO. The Ni implanted samples remained paramagnetic but the Fe-implanted ZnO showed evidence of ferromagnetism with an approximate Curie temperature of ${\sim}$240K. Preliminary X-Ray Photoelectron Spectroscopy measurements showed the Fe to be ill the 2+ oxidation state. The earrler density in the implanted region still appears to be too low to support carrier-meditated origin of the ferromagnetism and formation of bound magnetic polarons may be one potential explanation for the observed magnetic properties, No evidence of the Anomalous Hall Effect could be found in the Fe-implanted ZnO, but its transport properties were dominated by the conventional or ordinary Hall effect.

• Korean Journal of Materials Research
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• v.15 no.1
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• pp.73-77
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• 2005

Motivated by the enhanced magnetic properties of Mg-codoped GaMnN ferromagnetic semiconductors, Be-codoped GaMnAs films were grown via molecular beam epitaxy with varying Mn flux at a fixed Be flux. The structural, electrical, and magnetic properties were investigated. GaAs:(Mn,Be) films showed metallic behavior while GaAs:Mn films showed semiconducting behavior as determined by the temperature dependent resistivity measurements. The Hall-effect measurements with varying magnetic field showed clear anomalous Hall effect up to room temperature proving ferromagnetism and magnetotransport in the GaAs:(Mn,Be) films. Planar Hall resistance measurement also confirmed the properties. The dramatic enhancement of the Curie temperature in GaMnAs system was attributed to Be codoping in the GaMnAs films as well as MnAs precipitation.

• Journal of the Korean Magnetics Society
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• v.19 no.4
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• pp.133-137
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• 2009

$MnGeP_2$ thin films grown on GaAs exhibit room-temperature ferromagnetism with $T_C{\sim}$320 K, based on both magnetization and resistance measurements. The coercive fields at 5, 250, and 300 K are 3870, 1380 and 155 Oe, respectively. The anomalous Hall effect was observed, indicating spin polarization of the carriers. Hysteresis has been observed in both magnetoresistance and Hall measurements. The current-voltage characteristics of a $MnGeP_2$ film grown on an n-type GaAs substrate display semiconducting behavior.

• Journal of Magnetics
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• v.4 no.4
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• pp.107-110
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• 1999

In order to investigate the magnetism of Ru submonolayer on Pb(001), we have performed first-principles calculations for half-layer of Ru on Pd(001) using the full-potential linearzed augmented plane wave (FLAPW) method. We have found that the magnetic moment of Ru for 0.5 layer is 2.21 B. It is found that substrate Pd layers are polarized by the 0.5 Ru overlayer to have significant magnetic moments. Our results are compared with those obtained by the anomalous Hall effect. The calculated electronic structures, i,e., the spin densities and density of states are presented and discussed in relation with magnetic properties.

• Journal of Magnetics
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• v.10 no.3
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• pp.103-107
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• 2005

Magnetotransport is a prerequisite to realization of electronic operation of spintronic devices and it would be more useful if realized at room temperature. The effects of Be codoping on GaMnAs on magnetotransport were investigated. Mn flux was varied for growth of precipitated GaMnAs layers under a Be flux for degenerate doping via low-temperature molecular beam epitaxy. Magnetotransport as well as ferromagnetism at room temperature were realized in the precipitated GaAs:(Mn,Be) layers. Codoping of Be was shown to promote formation of MnGa clusters, and annealing process further stabilized the cluster phases. The room-temperature magnetic properties of the layers originate from the ferromagnetic clusters of MnGa and MnAs embedded in GaAs. The degenerately doped metallic GaAs matrix allowed the visualization of the magnetotransport through anomalous Hall effect.

• Journal of Magnetics
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• v.13 no.3
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• pp.88-91
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• 2008

This study examined the effect of Sn co-doping on the transport and magnetic properties of Cr-doped $In_2O_3$ thin films grown on (100) silicon substrates by pulsed laser deposition. The experimental results showed that Sn co-doping enhances the magnetization and appearance of the anomalous Hall effect, and increases the carrier (electron) concentration. These results suggest that the conduction carrier plays an important role in enhancing the ferromagnetism of a laser-deposited Cr-doped $In_2O_3$ film, which may have applications in transparent oxide semiconductor spin electronics devices.