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http://dx.doi.org/10.4283/JMAG.2008.13.3.088

Effect of Tin Codoping on Transport and Magnetic Properties of Chromium-doped Indium Oxide Films  

Kim, Hyo-Jin (Department of Nano Information Systems Engineering, School of Nano Science and Technology, Chungnam National University)
Kim, Hyoun-Soo (Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology)
Kim, Do-Jin (Department of Nano Information Systems Engineering, School of Nano Science and Technology, Chungnam National University)
Ihm, Young-Eon (Department of Nano Information Systems Engineering, School of Nano Science and Technology, Chungnam National University)
Choo, Woong-Kil (Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology)
Hwang, Chan-Yong (Advanced Industrial Technology Group, Division of Advanced Technology, Korea Research Institute of Standards and Science)
Publication Information
Journal of Magnetics / v.13, no.3, 2008 , pp. 88-91 More about this Journal
Abstract
This study examined the effect of Sn co-doping on the transport and magnetic properties of Cr-doped $In_2O_3$ thin films grown on (100) silicon substrates by pulsed laser deposition. The experimental results showed that Sn co-doping enhances the magnetization and appearance of the anomalous Hall effect, and increases the carrier (electron) concentration. These results suggest that the conduction carrier plays an important role in enhancing the ferromagnetism of a laser-deposited Cr-doped $In_2O_3$ film, which may have applications in transparent oxide semiconductor spin electronics devices.
Keywords
diluted magnetic semiconductors; indium tin oxide; ferromagnetism; magnetotransport;
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