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Magnetism in Fe-implanted ZnO  

Heo, Y.W. (Department of Materials Science and Engineering, University of Florida)
Kelly, J. (Department of Physics, University of Florida)
Norton, D.P. (Department of Materials Science and Engineering, University of Florida)
Hebard, A.F. (Department of Physics, University of Florida)
Pearton, S.J. (Department of Materials Science and Engineering, University of Florida)
Zavada, J.M. (US Army Research Office)
Park, Y.D. (CSCMR and School of Physics, Seoul National University)
Publication Information
JSTS:Journal of Semiconductor Technology and Science / v.4, no.4, 2004 , pp. 312-317 More about this Journal
Abstract
High dose ($3{\times}10^{16}cm^{-2}$) implantation of Fe or Ni ions into bulk, single-crystal ZnO substrates was carried out at substrate temperature of ${\sim}350^{\circ}C$ to avoid amorphization of the implanted region. The samples were subsequently annealed at $700^{\circ}C$ to repair some of the residual implant damage. X-Ray Diffraction did not show any evidence of secondary phase formation in the ZnO. The Ni implanted samples remained paramagnetic but the Fe-implanted ZnO showed evidence of ferromagnetism with an approximate Curie temperature of ${\sim}$240K. Preliminary X-Ray Photoelectron Spectroscopy measurements showed the Fe to be ill the 2+ oxidation state. The earrler density in the implanted region still appears to be too low to support carrier-meditated origin of the ferromagnetism and formation of bound magnetic polarons may be one potential explanation for the observed magnetic properties, No evidence of the Anomalous Hall Effect could be found in the Fe-implanted ZnO, but its transport properties were dominated by the conventional or ordinary Hall effect.
Keywords
spintronics; ferromagnetism; dilute magnetic semiconductors; ZnO; ion implantation;
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1 D.P.Norton, M.E.Overberg, S.J.Pearton, K.Pruessner, J.D.Budai, L.A.Boatner, M.F.Chisholm, J.S.Lee, Z.G.Khim, Y.D.Park and R.G.Wilson, Appl.Phys. Lett. 83(2003)   DOI   ScienceOn
2 M. Berciu and R. N. Bhatt, Phys. Rev. Lett. 87, 107203.1-4 (2001)   DOI   ScienceOn
3 S. Das Sarma, E. H. Hwang, and A. Kaminski, Phys. Rev. B 67, 155201-155201-16 (2003)   DOI   ScienceOn
4 S.J.Hahn, J.W.Song, C.H.Yang, S.H.Park, J.H.Park, Y.H.Jeong and K.W.Rhie, Appl.Phys.Lett. 81,421292002).   DOI   ScienceOn
5 K.Rode, A.Anane, R.Mattana, J.-P.Contour, O.Durand and R.LeBourgeois, J.Appl.Phys. 93,7676(2003)   DOI   ScienceOn
6 N.Theordoropoulou et al. (to be published)
7 H.J.Lee,S.Y.Jeong,C.R.Cho and C.H.Park,Appl.Phys. Lett.81,4020(2002)   DOI   ScienceOn
8 P.Sharma, A.Gupta, K.V.Rao, F.J.Owens, R. Sharma, R. Ahuja., J.M.Osorio Guillen, B.Johansson and.G.A.Gehring , Nature Mat. 2 673.(2003)   DOI   ScienceOn
9 T. Fukumura, Z. W. Jin, A. Ohtomo, H. Koinuma, and M. Kawasaki, Appl. Phys. Lett. 75, 3366 (1999).   DOI
10 D. P. Norton, S. J. Pearton, A. F. Hebard N. Theodoropoulou, L. A. Boatner, and R. G. Wilson, Appl Phys. Lett.82,239(2003)   DOI   ScienceOn
11 H.Saeki,H.Tabata,and T.Kawai,Solid-State Commun. 120,439(2001)   DOI   ScienceOn
12 Y.M.Cho, W.-K.Choo, H.Kim, D.Kim and Y.-E.Ihm, Appl.Phys.Lett. 80,3358(2002)   DOI   ScienceOn
13 K. Sato and H. Katayama-Yoshida, Japan J. Appl. Phys., 39, L555 (2000)   DOI
14 K. Ueda, H. Tabata, and T. Kawai, Appl. Phys. Lett.,79, 988( 2001)   DOI   ScienceOn
15 S.G.Yang, A.B.Pakhomov, S.T.Hung and C.Y.Wong, IEEE Trans.Magn. 38,2877(2002)   DOI   ScienceOn
16 N.Wakano,Y. Fujimura, N. Morinaga, A.Abe, N. Ashida, and T. Ito, Physica E, 10,260 (2001)   DOI   ScienceOn
17 K.Sato and H.Katayama-Yoshida, Semicond.Sci. Technol.17,367(2002)   DOI   ScienceOn
18 W.Prellier, A.Fouchet and B.Mercey, J.Phys.Condensed Matter 15,R1583(2003)   DOI   ScienceOn
19 T.Fukumura, Y.Yamada, H.Toyosaki, T.Hasegawa, H.,Koinuma and M.Kawasaki, Appl.Surface.Sci.272,134(2003)
20 T.Dietl, H. Ohno, F.Matsukura, J.Cibert and D.Ferrand, Science 287, 1019 (2000)   DOI   ScienceOn
21 T. Dietl, Semicond. Sci. Technol., 17, 377 (2002)   DOI   ScienceOn
22 S.J.Pearton, C.R.Abernathy, M.E.Overberg, G.T.Thaler, D.P.Norton, N.Theodoropoulou, A.F.Hebard, Y.D.Park, F.Ren, J.Kim and L.A.Boatner, J.Appl.Phys.93 1(2003)   DOI   ScienceOn
23 H. Ohno, J. Magnetism and Magnetic Materials, 200, 110( 1999)   DOI   ScienceOn
24 S.J.Pearton, C.R.Abernathy, D.P.Norton, A.F.Hebard, Y.D.Park, L.A.Boatner and J.D.Budai, Mat.Sci. Eng.R.40 137(2003)   DOI   ScienceOn
25 J. K. Furdyna, J. Appl. Phys.,64,R29 (1988)   DOI
26 H. Ohno, Science, 281, 951(1998)   DOI   ScienceOn
27 H. Ohno, J. Vac. Sci.Technol B, 18, 2039( 2000)   DOI   ScienceOn
28 S.von Molnar and D.Read, Proc.IEEE,91,715(2003)   DOI   ScienceOn
29 S.A.Wolf ,D.D. Awschalom, R.A.Buhrman ,J.M. Daughton ,S von Molnar , M.L. Roukes, A.Y. Chtchelkanova and D.M.Treger , Science 294, 1488 (2001)   DOI   ScienceOn
30 I. Malajovich, J. J. Berry, N. Samarth, and D. D. Awschalom, Nature, 411, 770 (2001)   DOI   ScienceOn