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http://dx.doi.org/10.3740/MRSK.2005.15.1.073

Magnetotransport of Be-doped GaMnAs  

Im W. S. (Department of Materials Science and Engineering and Research Center for Advanced Magnetic Materials, Chungnam National University)
Yoon T. S. (Department of Materials Science and Engineering and Research Center for Advanced Magnetic Materials, Chungnam National University)
Yu F. C. (Department of Materials Science and Engineering and Research Center for Advanced Magnetic Materials, Chungnam National University)
Gao C. X. (Department of Materials Science and Engineering and Research Center for Advanced Magnetic Materials, Chungnam National University)
Kim D. J. (Department of Materials Science and Engineering and Research Center for Advanced Magnetic Materials, Chungnam National University)
Ibm Y. E. (Department of Materials Science and Engineering and Research Center for Advanced Magnetic Materials, Chungnam National University)
Kim H. J. (Department of Materials Science and Engineering and Research Center for Advanced Magnetic Materials, Chungnam National University)
Kim C. S. (Korea Research Institute of Standards and Science)
Kim C. O. (Department of Materials Science and Engineering and Research Center for Advanced Magnetic Materials, Chungnam National University)
Publication Information
Korean Journal of Materials Research / v.15, no.1, 2005 , pp. 73-77 More about this Journal
Abstract
Motivated by the enhanced magnetic properties of Mg-codoped GaMnN ferromagnetic semiconductors, Be-codoped GaMnAs films were grown via molecular beam epitaxy with varying Mn flux at a fixed Be flux. The structural, electrical, and magnetic properties were investigated. GaAs:(Mn,Be) films showed metallic behavior while GaAs:Mn films showed semiconducting behavior as determined by the temperature dependent resistivity measurements. The Hall-effect measurements with varying magnetic field showed clear anomalous Hall effect up to room temperature proving ferromagnetism and magnetotransport in the GaAs:(Mn,Be) films. Planar Hall resistance measurement also confirmed the properties. The dramatic enhancement of the Curie temperature in GaMnAs system was attributed to Be codoping in the GaMnAs films as well as MnAs precipitation.
Keywords
spintronics; magnetotransport; GaMnAs;
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