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http://dx.doi.org/10.4283/JKMS.2009.19.4.133

Magnetotransport Properties of MnGeP2 Films  

Kim, Yun-Ki (Department of Electrophysics, Kwangwoon University)
Cho, Sung-Lae (Department of Physics, University of Ulsan)
J.B., Ketterson (Department of Physics & Astronomy, Northwestern University)
Publication Information
Journal of the Korean Magnetics Society / v.19, no.4, 2009 , pp. 133-137 More about this Journal
Abstract
$MnGeP_2$ thin films grown on GaAs exhibit room-temperature ferromagnetism with $T_C{\sim}$320 K, based on both magnetization and resistance measurements. The coercive fields at 5, 250, and 300 K are 3870, 1380 and 155 Oe, respectively. The anomalous Hall effect was observed, indicating spin polarization of the carriers. Hysteresis has been observed in both magnetoresistance and Hall measurements. The current-voltage characteristics of a $MnGeP_2$ film grown on an n-type GaAs substrate display semiconducting behavior.
Keywords
$MnGeP_2$; spin polarization; ferromagnetism; magnetic semiconductor; magnetotransport;
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