JSTS:Journal of Semiconductor Technology and Science

The Institute of Electronics and Information Engineers (대한전자공학회)
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Magnetism in Fe-implanted ZnO

  • Heo, Y.W. (Department of Materials Science and Engineering, University of Florida) ;
  • Kelly, J. (Department of Physics, University of Florida) ;
  • Norton, D.P. (Department of Materials Science and Engineering, University of Florida) ;
  • Hebard, A.F. (Department of Physics, University of Florida) ;
  • Pearton, S.J. (Department of Materials Science and Engineering, University of Florida) ;
  • Zavada, J.M. (US Army Research Office) ;
  • Park, Y.D. (CSCMR and School of Physics, Seoul National University)
  • Published : 2004.12.31
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Abstract

High dose ($3{\times}10^{16}cm^{-2}$) implantation of Fe or Ni ions into bulk, single-crystal ZnO substrates was carried out at substrate temperature of ${\sim}350^{\circ}C$ to avoid amorphization of the implanted region. The samples were subsequently annealed at $700^{\circ}C$ to repair some of the residual implant damage. X-Ray Diffraction did not show any evidence of secondary phase formation in the ZnO. The Ni implanted samples remained paramagnetic but the Fe-implanted ZnO showed evidence of ferromagnetism with an approximate Curie temperature of ${\sim}$240K. Preliminary X-Ray Photoelectron Spectroscopy measurements showed the Fe to be ill the 2+ oxidation state. The earrler density in the implanted region still appears to be too low to support carrier-meditated origin of the ferromagnetism and formation of bound magnetic polarons may be one potential explanation for the observed magnetic properties, No evidence of the Anomalous Hall Effect could be found in the Fe-implanted ZnO, but its transport properties were dominated by the conventional or ordinary Hall effect.

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