• 한국전기전자재료학회논문지
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• 제14권12호
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• pp.1016-1022
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• 2001

This study presents the microstructure-electrical property relationship of reactive-sputtered Ta$_2$O$_{5}$ MIM capacitor structure processed by annealing in a vacuum and $O_2$ ambience. A microstructural investigation showed the existence of amorphous phase in as-deposited condition and the formation of preferentially oriented-Ta$_2$O$_{5}$ in $700^{\circ}C$ annealing. On annealing under the $O_2$ atmosphere, the Ta$_2$O$_{5}$ film exhibited the trend of its composition\`s approaching to stoichiometry from off-stoichiometry, analyzed by EPMA, the leakage current decrease and the enhanced temperature-capacitance characteristic stability. In the case of low temperature vacuum-annealing treatment, the leakage current behavior was stable irrespective of applied electric field. In the high temperature-annealed film at a vacuum condition, the electrical properties was observed to deteriorate. The results state that in Ta$_2$O$_{5}$ film annealed at $O_2$ atmosphere, gives rise to improvement of electrical characteristics in the capacitor were improved by reducing oxygen-vacancy and dandling Ta-O bond.-O bond.

• 한국정밀공학회지
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• 제18권12호
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• pp.167-176
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• 2001

The effects of heat treatments and testing temperatures on the mechanical properties of Invar materials were investigated through experiments, which call influence the formability in metal forming fields. Annealing temperatures were changed from $900^{\circ}C$ to $1200^{\circ}C$ with an increment of $100^{\circ}C$ under two different furnace atmosphere(vacuum and H$_2$gas). Microstructure and hardness tests were performed for annealed specimens at room temperature(RT) and tensile tests were also performed by changing annealing temperatures as well as testing temperatures from RT to $300^{\circ}C$. The grain size of annealed materials increased with increasing annealing temperature, while micro-hardness distributions showed almost same hardness values regardless of annealing temperatures. Strength ratio (tensile/yield strength), which influences the forming characteristics of sheet metal, remained almost constant for various experimental conditions in case of unannealed specimens. However, it showed increasing tendency with increasing both annealing and testing temperatures, particularly at the testing temperature higher than $200^{\circ}C$. Therefore it can be concluded that press formability of fully-annealed Invar material can be improved by warm forming technique.

• IEIE Transactions on Smart Processing and Computing
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• 제3권5호
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• pp.331-337
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• 2014

Ge is becoming an increasingly popular semiconductor material with high Si compatibility for on-chip optical interconnect technology. For a better manifestation of the meritorious material properties of Ge, its surface treatment should be performed satisfactorily before the electronic and photonic components are fabricated. Ex-situ rapid thermal annealing (RTA) processes with different gases were carried out to examine the effects of the annealing gases on the thin-film quality of Ge grown epitaxially on Si substrates. The Ge-on-Si samples were prepared in different structures using the same equipment, reduced-pressure chemical vapor deposition (RPCVD), and the samples annealed in $N_2$, forming gas (FG), and $O_2$ were compared with the unannealed (deposited and only cleaned) samples to confirm the improvements in Ge quality. To evaluate the thin-film quality, room-temperature photoluminescence (PL) measurements were performed. Among the compared samples, the $O_2$-annealed samples showed the strongest PL signals, regardless of the sample structures, which shows that ex-situ RTA in the $O_2$ environment would be an effective technique for the surface treatment of Ge in fabricating Ge devices for optical computing systems.

• 열처리공학회지
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• 제22권2호
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• pp.101-107
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• 2009

Effect of isochronic aging on transformation behavior of Ti-50.85at%Ni alloy were investigated by differential scanning calorimeter (DSC). The martensitic transformation temperature increases with increasing annealing temperature until reaching a maximum, and then decreases with further increasing annealing temperature. This can be rationalized by interaction between the distribution of $Ti_3Ni_4$ precipitates and Ni content in the matrix. The R-phase transformation temperature increases with increasing annealing temperature until reaching a maximum, and then decreases with a further increase of annealing temperature. This is attributed to the change of Ni content in the matrix caused by precipitation of $Ti_3Ni_4$. The occurrence of the multiple-stage martensitic and R-phase transformation is attributed to precipitation-induced inhomogeneity of the matrix, both in terms of composition and of internal stress fields.

• 열처리공학회지
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• 제31권3호
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• pp.111-119
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• 2018

We report the post-annealing effect of Sn doped ZnO (ZnO:Sn) thin film grown on sapphire (001) substrate using radio-frequency powder sputtering method. During thermal annealing in a vacuum atmosphere, the ZnO:Sn thin film is transformed into a porous thin film. Based on X-ray diffraction, scanning electron microscopy, and energy dispersive X-ray analyses, a possible mechanism for the production of pores is presented. Sn atoms segregate to form clusters that act as catalysts to dissociate Zn-O bonds. The Zn and O atoms subsequently vaporize, leading to the formation of pores in the ZnO:Sn thin film. We also found that Sn clusters were oxidized to form SnO or $SnO_2$ phases.

• 한국자기학회지
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• 제11권4호
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• pp.173-178
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• 2001

가스분무법으로 만든 MPP 압분자심을 무자장 및 자장중에서 열처리한 후 냉각속도를 달리할 때 얻어지는 자기적 특성의 변화를 조사하였다. 무자장중에서 열처리시 냉각속도가 증가하면 교류투자율 및 자심손실이 감소하였으며, 이는 각각 빠른 냉각속도에서의 불균일한 내부음력의 발생과 이상 와전류손실의 감소에 기인하는 것으로 해석되었다. 한편 MPP 압분체를 무자장 열처리 후 냉각속도를 달리하여도 Ni-Fe 합금에서 전형적으로 나타나는 규칙상의 형성에 따른 자기적 특성의 변화는 보이지 않았으나, 느린 냉각속도의 조건하에서 자장열처리를 하면 용이하게 구성원자의 방향성 규칙화에 의해 유도자기이방성이 생성되며 상당한 투자율 및 자심손실의 변화가 얻어지는 것으로 관찰되었다.

• 열처리공학회지
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• 제25권5호
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• pp.244-248
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• 2012

ITO/$TiO_2$ films were deposited by RF magnetron sputtering on glass substrates and then the effect of vacuum annealing on the structural, optical and electrical properties of the films was investigated. The structural, optical and electrical properties are strongly related to annealing temperature. The films annealed at $300^{\circ}C$ showed a grain size of 40.9 nm, which was larger than as-deposited amorphous films. The optical transmittance in the visible wavelength region also increased, while the electrical resistivity decreased. The ITO/$TiO_2$ films annealed at $300^{\circ}C$ showed the highest optical transmittance of 81% and also showed the lowest electrical resistivity of $3.05{\times}10^{-4}{\Omega}cm$, in this study.

• 열처리공학회지
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• 제25권5호
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• pp.239-243
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• 2012

$SnO_2$ thin films were prepared on the Si substrate by radio frequency (RF) magnetron sputtering and then post deposition vacuum annealed to investigate the effect of annealing temperature on the structural properties and hydrogen gas sensitivity of the films. The films that annealed at $300^{\circ}C$ show the higher sensitivity than the other films annealed at $150^{\circ}C$. From atomic force microscope observation, it is supposed that post deposition annealing promotes the rough surface and also, increase gas sensitivity of $SnO_2$ films for hydrogen gas. These results suggest that the vacuum annealed $SnO_2$ thin films at optimized temperatures are promising for practical high-performance hydrogen gas sensors.

• 열처리공학회지
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• 제12권3호
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• pp.231-239
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• 1999

Volume fraction and morphology of retained austenite, tensile properties of TRIP type high strength steel sheet with Fe-C-Si-Mn-Cu chemical composition have been investigated. The retained austenite of granular, bar and film type existing in specimen was obtained after intercritical annealing and austempering. The granular type retained austenite increased with increase of intercritical annealing and austempering temperature. With increase of intercritical annealing temperature, retained austenite and carbon contents increased. Maximum contents of retained austenite was obtained by austempering at $400^{\circ}C$. The maximum tensile strength was obtained by austempering at $450^{\circ}C$ and maximum elongation was obtained at $400^{\circ}C$. T.S${\times}$E.L value increased with increase of retained austenite contents due to the elongation strongly controlled by contents of retained austenite, but tensile strength was affected with various factors such as bainitic structure etc.

• 한국세라믹학회지
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• 제37권8호
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• pp.731-738
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• 2000

KLN(K3Li2Nb5O15) has attracted a great deal of attention for their potential usefulness in piezoelectric, electro-optic, nonlinear optic, and pyroelectirc devices. Especially, the KLN single crystal has been studied in the field of optics and electronics. However it is hard to produce good quality single crystals due to the crack propagation during crystal growing. One of the solutions of this problem is prepartion of thin film. But the intensive study has not been conducted so far. In this study, after the KLN thin film were prepared by R.F. magnetron Sputtering method on SiO2/Si substrate, the post-annealing methods of RTA(rapid thermal annealin) and IPA(insitu post annealing) were employed. The deposition condition of KLN thin film was RF power(100 W), Working pressure(100 mtorr). The commonness of both RAT and IPA was that the higher were deposition and post annealing temperature, the higher was the intensity of XRD but the less surface roughness. The difference of post-annealing methods affected XRD phase and surface condition very much. And in IPA process, the influence of O2 had much effect on the formation of KLN phase.