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http://dx.doi.org/10.12656/jksht.2018.31.3.111

Annealing of Sn Doped ZnO Thin Films Grown by Radio Frequency Powder Sputtering  

Lee, Haram (Department of Materials Science and Engineering, Chosun University)
Jeong, Byeong Eon (Department of Materials Science and Engineering, Chosun University)
Yang, Myeong Hun (Department of Materials Science and Engineering, Chosun University)
Lee, Jong Kwan (Department of Materials Science and Engineering, Chosun University)
Choi, Young Bin (Department of Materials Science and Engineering, Chosun University)
Kang, Hyon Chol (Department of Materials Science and Engineering, Chosun University)
Publication Information
Journal of the Korean Society for Heat Treatment / v.31, no.3, 2018 , pp. 111-119 More about this Journal
Abstract
We report the post-annealing effect of Sn doped ZnO (ZnO:Sn) thin film grown on sapphire (001) substrate using radio-frequency powder sputtering method. During thermal annealing in a vacuum atmosphere, the ZnO:Sn thin film is transformed into a porous thin film. Based on X-ray diffraction, scanning electron microscopy, and energy dispersive X-ray analyses, a possible mechanism for the production of pores is presented. Sn atoms segregate to form clusters that act as catalysts to dissociate Zn-O bonds. The Zn and O atoms subsequently vaporize, leading to the formation of pores in the ZnO:Sn thin film. We also found that Sn clusters were oxidized to form SnO or $SnO_2$ phases.
Keywords
ZnO; Thin film; Sn doping; Porous structure; Annealing;
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