• Title/Summary/Keyword: Annealing treatment

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Ferroelectric domain inversion in $LiNbO_3$ crystal plate during heat treatment for Ti in-diffusion ($Ti:LiNbO_3$ 도파로 제작을 위한 열처리 과정 동안 강유전 도메인 특성에 미치는 영향)

  • Yang, W.S.;Lee, H.Y.;Kwon, S.W.;Kim, W.K.;Lee, H.Y.;Yoon, D.H.
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.15 no.3
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    • pp.124-127
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    • 2005
  • It is demonstrated that the annealing process for Ti in-diffusion to z-cut $LiNbO_3$ at temperature lower than the curie temperature in a platinum (Pt) box can cause a ferroelectric micro-domain inversion at the +z surface and Li out-diffusion, therefore which should be avoided or suppressed for waveguide type periodically poled lithium niobate (PPLN) devices. The depth of the inversion layer depends on the Ti-diffusion conditions such as temperature, atmosphere, the sealing method of $LiNbO_3$ in the Pt box and crystal orientation is experimentally examined. The result shows that the polarization-inverted domain boundary appears at the only +z surface and its thickness is about $1.6{\mu}m$. Also, for the etched $LiNbO_3$, surface the domain shape was observed by the optical microscope and atomic force microscopy (AEM), and distribution of the cation concentrations in the $LiNbO_3$ crystal by the secondary ion mass spectrometry (SIMS).

Development of Hybrid Machining System and Hybrid Process Technology for Ultra-fine Planing and Micro Punching (초정밀 평삭가공과 마이크로 펀칭가공을 위한 하이브리드 가공장비 및 공정기술 개발)

  • Kim, Han-Hee;Jeon, Eun-Chae;Cha, Jin-Ho;Lee, Je-Ryung;Kim, Chang-Eui;Choi, Hwan-Jin;Je, Tae-Jin;Choi, Doo-Sun
    • Journal of the Korean Society of Manufacturing Process Engineers
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    • v.12 no.6
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    • pp.10-16
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    • 2013
  • Ultra-fine planing and micro punching are separately used for improving surface roughness and machining dot patterns, respectively, of metal molds. If these separate machining processes are applied for machining of identical molds, there could be an aligning mismatch between the machine tool and the mold. A hybrid machining system combining ultra-fine planing and micro punching was newly developed in this study in order to solve this mismatch; hybrid process technology was also developed for machining dot patterns on a mirror surface of a metal mold. The hybrid machining system has X, Y, and Z axes, and a cam axis for ultra-fine planing. The cam axis and attachable and removable solenoid actuators for micro punching can make large and small sizes of dot patterns, respectively. Ultra-fine planing was applied in the first place to improve the surface roughness of a metal mold; the measured surface roughness was about 20nm. Then, micro punching was applied to machine dot patterns on the same mold. It was possible to control the diameter of the dot patterns by changing the input voltage of the solenoid actuator. Before machining, severe inhomogeneous plastic deformation around the machined dot patterns was also removed by annealing heat treatment. Therefore, it was verified that metal molds with dots patterns for optical products can be machined using a hybrid machining system and the hybrid process technology developed in this study.

The Effect of Thermal Annealing and Growth of $CuGaSe_2$ Single Crystal Thin Film for Solar Cell Application (태양전지용 $CuGaSe_2$ 단결정 박막 성장과 열처리 효과)

  • Hong, Kwang-Joon;You, Sang-Ha
    • Journal of the Korean Solar Energy Society
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    • v.23 no.2
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    • pp.59-70
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    • 2003
  • A stoichiometric mixture of evaporating materials for $CuGaSe_2$ single crystal thin films was prepared from horizontal electric furnace. Using extrapolation method of X-ray diffraction patterns for the polycrystal $CuGaSe_2$, it was found tetragonal structure whose lattice constant $a_0$ and $c_0$ were $5.615{\AA}$ and $11.025{\AA}$, respectively. To obtain the single crystal thin films, $CuGaSe_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperatures were $610^{\circ}C$ and $450^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $CuGaSe_2$ single crystal thin films measured with Hall effect by van der Pauw method are $5.01\times10^{17}cm^{-3}$ and $245cm^2/V{\cdot}s$ at 293K. respectively. The temperature dependence of the energy band gap of the $CuGaSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g$(T)=1.7998 eV-($8.7489\times10^{-4}$ eV/K)$T^2$/(T+335K). After the as-grown $CuGaSe_2$ single crystal thin films was annealed in Cu-, Se-, and Ga-atmospheres, the origin of point defects of $CuGaSe_2$ single crystal thin films has been investigated by the photoluminescence(PL) at 10 K. The native defects of $V_{CU},\;V_{Se},\;Cu_{int}$ and $Se_{int}$ obtained by PL measurements were classified as a donors or acceptors type. And we concluded that the heat-treatment in the Cu-atmosphere converted $CuGaSe_2$ single crystal thin films to an optical n-type. Also, we confirmed that Ga in $CuGaSe_2$/GaAs did not form the native defects because Ga in $CuGaSe_2$ single crystal thin films existed in the form of stable bonds.

Graphoepitaxy of ZnO layers grown on periodic structured Si substrates (주기적 표면 구조의 SiO$_2$ 기판을 이용한 ZnO박막의 Graphoepitaxy)

  • Jung, Jin-U;Ahn, Hyeon-Cheol;Lee, Chang-Yong;Kim, Gwang-Hui;Choi, Seok-Cheol;Lee, Tae-Hun;Park, Seung-Hwan;Jung, Mi-Na;Jung, Myeong-Hun;Lee, Ho-Jun;Yang, Min;Yao, Takafumi;Chang, Ji-Ho
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • v.9 no.1
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    • pp.1042-1045
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    • 2005
  • The feasibility of graphoepitaxial growth of compound semiconductor has been studied. Two kinds of substrates were prepared; one is smooth substrate, the other one is a periodic structured substrate. ZnO film was deposited on both substrates by sputtering, and thermal treatment was performed to improve the crystal quality and investigate the effect of the periodic structure. Atomic force microscopy (AFM) and photoluminescence (PL) were used to characterize the samples. As a result, very similarchange, the improvement of crystallinity, has been observed from both samples, except the sample annealed at the highest temperature. It implies the periodic structure affects the crystallinity of the films, and the graphoepitaxy of compound semiconductors is possible by using appropriate surface structure.

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Quality Characteristics of Cookies with Resistant Starches (저항전분을 첨가하여 제조한 쿠키의 품질 특성)

  • Kim, Jae-Suk;Shin, Mal-Shick
    • Korean journal of food and cookery science
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    • v.22 no.5 s.95
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    • pp.659-665
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    • 2006
  • The effects of resistant starches on the quality characteristics of cookies were investigated by the physicochemical, instrumental and sensory properties of RS-added flours and cookies. Retrograded RS3 by autoclaving-cooling cycle and cross-linked RS4 after annealing treatment were used. The protein content of RS-added flour decreased, but the ash content of RS4-added flour increased slightly with increasing RS content. The RS levels of wheat flour, RS3- and RS4-added flours were 7.0%, 9.6-13.4% and 11.5-17.9%, respectively. The swelling powers of RS-added flours at 80$^{\circ}C$ decreased, but the solubility of RS3-added flour increased by 2-3 fold compared to that of control flour. Initial pasting temperature increased, but peak, holding, and final viscosities decreased with increasing RS content. The retrogradation degree of RS-added flours was lowered, because of the decreased consistency and breakdown viscosity. The yellowness of RS3-added flour increased with increasing RS3 content which induced browning reaction during baking. On the sensory test, RS-added cookies were significantly different in shape, color and overall quality (p<0.05), and their texture also affected. Overall quality was higher in peanut cookies than in AACC standard cookies and RS addition (up to 30%, w/w), regardless of the RS type, improved the cookie quality.

Low temperature growth of Ga2O3 thin films on Si substrates by MOCVD and their electrical characteristics (MOCVD에 의한 Si 기판 위의 Ga2O3 박막 저온 결정 성장과 전기적 특성)

  • Lee, Jung Bok;Ahn, Nam Jun;Ahn, Hyung Soo;Kim, Kyung Hwa;Yang, Min
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.32 no.2
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    • pp.45-50
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    • 2022
  • Ga2O3 thin films were grown on n-type Si substrates at various growth temperatures of 500, 550, 600, 650 and 700℃. The Ga2O3 thin films grown at 500℃ and 550℃ were characterized as featureless flat surface. Grown at higher temperatures (600, 650, and 700℃) showed very rough surface morphology. To figure out the annealing effect on the thin films grown at relatively low temperatures (500, 550, 600, 650 and 700℃), the Ga2O3 films were thermally treated at 900℃ for 10 minutes. Crystal structure of the Ga2O3 films grown at 500 and 550℃ were changed from amorphous to polycrystalline structure with flat surface. Ga2O3 film grown at 550℃ was chosen for the fabrication of a Schottky barrier diode (SBD). Electrical properties of the SBDs depend on the thermal treatment were evaluated. A MSM type photodetector was made on the low temperature grown Ga2O3 thin film. The photocurrent for the illumination of 266 nm wavelength showed 5.32 times higher than dark current at the operating voltage of 10 V.

p-Type Activation of AlGaN-based UV-C Light-Emitting Diodes by Hydrogen Removal using Electrochemical Potentiostatic Activation (전기화학적 정전위 활성화를 사용한 수소 제거에 의한 AlGaN기반의 UV-C 발광 다이오드의 p-형 활성화)

  • Lee, Koh Eun;Choi, Rak Jun;Kumar, Chandra Mohan Manoj;Kang, Hyunwoong;Cho, Jaehee;Lee, June Key
    • Journal of the Microelectronics and Packaging Society
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    • v.28 no.4
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    • pp.85-89
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    • 2021
  • AlGaN-based UV-C light-emitting diodes (LEDs) were applied for p-type activation by electrochemical potentiostatic activation (EPA). The p-type activation efficiency was increased by removing hydrogen atoms through EPA treatment using a neutral Mg-H complex that causes high resistance and low conductivity. A neutral Mg-H complex is decomposed into Mg- and H+ depending on the key parameters of solution, voltage, and time. The improved hole carrier concentration was confirmed by secondary ion mass spectroscopy (SIMS) analysis. This mechanism eventually improved the internal quantum efficiency (IQE), the light extraction efficiency, the leakage current value in the reverse current region, and junction temperature, resulting in better UV-C LED lifetime. For systematic analysis, SIMS, Etamax IQE system, integrating sphere, and current-voltage measurement system were used, and the results were compared with the existing N2-annealing method.

Use of Real-Time PCR and Internal Standard Addition Method for Identifying Mixed Ratio of Chicken Meat in Sausages (Real-Time PCR과 Internal Standard Addition법을 이용한 돼지고기 소시지에 혼합된 닭고기의 정량)

  • Lee, Namrye;Joo, Jae-Young;Yeo, Yong-Heon
    • Journal of the Korean Society of Food Science and Nutrition
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    • v.46 no.9
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    • pp.1097-1105
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    • 2017
  • This study examined how much chicken meat was in sausage made with pork. Both real-time polymerase chain reaction (PCR) and internal standard addition were used. Fifty ng of chicken DNA was added to the sausages as an internal standard. The addition of standard DNA increased the amplification efficiency of PCR and confirmed the possibility of quantitative analysis. A QIAamp DNA Micro Kit was used to improve the DNA recovery and amplification efficiency. The density of template DNA and primer were suitable for $3.0{\sim}5.0{\mu}L$ and $0.5{\mu}L$, respectively. Each DNA of pig and chicken was diluted in 10-fold from steps 50 ng to 0.05 ng. The detection limit of both pig and chicken meat was more than 0.05 ng and the correlation coefficient of the standard curve was at least 0.98. The result of the quantitative analysis after heat treatment of 3 samples of pigs and chickens mixed at 70:30 showed a 5.7% difference (64.3:35.7) between the expected value and measured value. The quantitative value was changed by affecting the DNA according to the heat treatment ($70^{\circ}C$, 10 min). An analysis of the pork and chicken content in sausages showed that it was difficult to detect chicken meat and the quantitative value of DNA according to the Ct value was very low. On the other hand, when adding standard material (50 ng of chicken DNA) to the sausages, the Ct value decreased gradually with increasing chicken mixing ratio. Thus, the mixing ratio of chicken in sausages could be estimated.

Ni/Au Electroless Plating for Solder Bump Formation in Flip Chip (Flip Chip의 Solder Bump 형성을 위한 Ni/Au 무전해 도금 공정 연구)

  • Jo, Min-Gyo;O, Mu-Hyeong;Lee, Won-Hae;Park, Jong-Wan
    • Korean Journal of Materials Research
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    • v.6 no.7
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    • pp.700-708
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    • 1996
  • Electroless plating technique was utilized to flip chip bonding to improve surface mount characteristics. Each step of plating procedure was studied in terms pf pH, plating temperature and plating time. Al patterned 4 inch Si wafers were used as substrstes and zincate was used as an activation solution. Heat treatment was carried out for all the specimens in the temperature range from room temperature to $400^{\circ}C$ for $30^{\circ}C$ minutes in a vacuum furnace. Homogeneous distribution of Zn particles of size was obtained by the zincate treatment with pH 13 ~ 13.5, solution concentration of 15 ~ 25% at room temperature. The plating rates for both Ni-P and Au electroless plating steps increased with increasing the plating temperature and pH. The main crystallization planes of the plated Au were found to be (111) a pH 7 and (200) and (111) at pH 9 independent of the annealing temperature.

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Isolation and Characterization of Defense Genes Mediated by a Pathogen-Responsive MAPK Cascade in Tobacco (담배에서 병원균에 반응하는 MAPK 신호전달체계에 의해 매개되는 방어 유전자들의 분리 및 특성화)

  • Jang, Eun-Kyoung;Kang, Eun-Young;Kim, Young-Cheol;Cho, Baik-Ho;Yang, Kwang-Yeol
    • Journal of Life Science
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    • v.18 no.8
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    • pp.1023-1030
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    • 2008
  • NtMEK2, which is the tobacco MAPK kinase that is upstream of SIPK and WIPK, was identified using the dexamethasone (DEX)-inducible gain-of-function transgenic system. Expression of $NtNEK2^{DD}$, a constitutively active mutant of NtNEK2, leads to HR-like cell death, which indicates that the NtMEK2-SIPK/WIPK cascade controls defense responses in tobacco. However, little is known about the downstream target substrates or defense-related genes that are regulated by the NtMEK2-SIPK/ WIPK cascade. In this study, ACP-based differential display RT-PCR was used to isolate the downstream effectors mediated by the NtMEK2-SIPK/WIPK cascade in $NtNEK2^{DD}$ transgenic plants. The results identified 6 novel differentially expressed genes (DEGs). These included pathogen induced protein 2-4 (pI2-4), monoterpene synthase 2 (MTS2), seven in absentia protein (SINA), cell death marker protein 1 (CDM1), hydroxyproline-rich glycoprotein (HRGP) and unknown genes (DEG45). The induction of these genes was confirmed by RT-PCR of samples obtained from $NtNEK2^{DD}$ plants. Additionally, when compared with other isolated DEGs, the pI2-4, CDM1 and HRGP genes were significantly up-regulated in response to treatment with salicylic acid and tobacco mosaic virus. Taken together, these results suggest that three novel DEGs were regulated by the NtMEK2-SIPK/WIPK cascade involved in disease resistance in tobacco.