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Ferroelectric domain inversion in $LiNbO_3$ crystal plate during heat treatment for Ti in-diffusion  

Yang, W.S. (Nano Bio-photonics Team, Korea Electronics Technology Institute, Department of Materials Engineering, Hankuk Aviation University)
Lee, H.Y. (Nano Bio-photonics Team, Korea Electronics Technology Institute)
Kwon, S.W. (Department of Materials Engineering, Hankuk Aviation University)
Kim, W.K. (Nano Bio-photonics Team, Korea Electronics Technology Institute)
Lee, H.Y. (Nano Bio-photonics Team, Korea Electronics Technology Institute)
Yoon, D.H. (Department of Advanced Materials Engineering, Sungkyunkwan University)
Publication Information
Journal of the Korean Crystal Growth and Crystal Technology / v.15, no.3, 2005 , pp. 124-127 More about this Journal
Abstract
It is demonstrated that the annealing process for Ti in-diffusion to z-cut $LiNbO_3$ at temperature lower than the curie temperature in a platinum (Pt) box can cause a ferroelectric micro-domain inversion at the +z surface and Li out-diffusion, therefore which should be avoided or suppressed for waveguide type periodically poled lithium niobate (PPLN) devices. The depth of the inversion layer depends on the Ti-diffusion conditions such as temperature, atmosphere, the sealing method of $LiNbO_3$ in the Pt box and crystal orientation is experimentally examined. The result shows that the polarization-inverted domain boundary appears at the only +z surface and its thickness is about $1.6{\mu}m$. Also, for the etched $LiNbO_3$, surface the domain shape was observed by the optical microscope and atomic force microscopy (AEM), and distribution of the cation concentrations in the $LiNbO_3$ crystal by the secondary ion mass spectrometry (SIMS).
Keywords
$LiNbO_3$; Periodically poled lithium niobate (PPLN); Polarization-inversion; SIMS;
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