Browse > Article
http://dx.doi.org/10.6111/JKCGCT.2022.32.2.045

Low temperature growth of Ga2O3 thin films on Si substrates by MOCVD and their electrical characteristics  

Lee, Jung Bok (Department of Materials Engineering, Korea Maritime and Ocean University)
Ahn, Nam Jun (Department of Materials Engineering, Korea Maritime and Ocean University)
Ahn, Hyung Soo (Department of Materials Engineering, Korea Maritime and Ocean University)
Kim, Kyung Hwa (Department of Materials Engineering, Korea Maritime and Ocean University)
Yang, Min (Department of Materials Engineering, Korea Maritime and Ocean University)
Publication Information
Journal of the Korean Crystal Growth and Crystal Technology / v.32, no.2, 2022 , pp. 45-50 More about this Journal
Abstract
Ga2O3 thin films were grown on n-type Si substrates at various growth temperatures of 500, 550, 600, 650 and 700℃. The Ga2O3 thin films grown at 500℃ and 550℃ were characterized as featureless flat surface. Grown at higher temperatures (600, 650, and 700℃) showed very rough surface morphology. To figure out the annealing effect on the thin films grown at relatively low temperatures (500, 550, 600, 650 and 700℃), the Ga2O3 films were thermally treated at 900℃ for 10 minutes. Crystal structure of the Ga2O3 films grown at 500 and 550℃ were changed from amorphous to polycrystalline structure with flat surface. Ga2O3 film grown at 550℃ was chosen for the fabrication of a Schottky barrier diode (SBD). Electrical properties of the SBDs depend on the thermal treatment were evaluated. A MSM type photodetector was made on the low temperature grown Ga2O3 thin film. The photocurrent for the illumination of 266 nm wavelength showed 5.32 times higher than dark current at the operating voltage of 10 V.
Keywords
$Ga_2O_3$; MOCVD; Si. Schottky Barrier Diode (SBD); MSM (metal-semiconductor-metal) photodetector;
Citations & Related Records
연도 인용수 순위
  • Reference
1 F. Boschi, M. Bosi, T. Berzina, E. Buffagni, C. Ferrari and R. Fornari, "Hetero-epitaxy of ε-Ga2O3 layers by MOCVD and ALD", J. Cryst. Growth. 443 (2016) 25.   DOI
2 K. Sasaki, D. Wakimoto, Q. Thieu, Y. Koishikawa, A. Kuramata, M. Higashiwaki and S. Yamakoshi, "First demonstration of Ga2O3 trench MOS-type schottky barrier diodes", IEEE Electron Device Lett. 38 (2017) 783.   DOI
3 N. Ueda, H. Hosono, R. Waseda and H. Kawazoe, "Synthesis and control of conductivity of ultraviolet transmitting β-Ga2O3 single crystals", Appl. Phys. Lett. 70 (1997) 3561.   DOI
4 S. Rafique, L. Han, M.J. Tadjer, J.A. Freitas, N.A. Mahadik and H. Zhao, "Homoepitaxial growth of β-Ga2O3 thin films by low pressure chemical vapor deposition", Appl. Phys. Lett. 108 (2016) 182105.   DOI
5 Y. Oshima, E.G. Villora, Y. Matsushita, S. Yamamoto and K. Shimamura, "Epitaxial growth of phase-pure ε- Ga2O3 by halide vapor phase epitaxy", J. Appl. Phys. 118 (2015) 085301.   DOI
6 P.H. Carey IV, J. Yang, F. Ren, R. Sharma, M. Law and S.J. Pearton, "Comparison of dual-stack dielectric field plates on β-Ga2O3 schottky rectifiers", ECS J. Solid State Sci. Technol. (2019) Q3221.
7 P.N. Vinod, B.C. Chakravarty, M. Lal, R. Kumar and S.N. Singh, "A novel method for the determination of the front contact resistance in large area screen printed silicon solar cells", Semicond. Sci. Technol. (2020) 286.
8 S. Geller, "Crystal structure of β-Ga2O3", J. Chem. Phys 33 (1960) 676.   DOI
9 R. Roy, V. Hill and E. Osborn, "Polymorphism of Ga2O3 and the system Ga2O3-H2O", J. Am. Chem. Soc. 74 (1952) 719.   DOI
10 Y. Li, A. Trinchi, W. Wlodarski, K. Galatsis and K. Kalantar-zadeh, "Investigation of the oxygen gas sensing performance of Ga2O3 thin films with different dopants", Sensor. Actuat. B-chem. 93 (2003) 431.   DOI
11 H. Tippins, "Optical absorption and photoconductivity in the band edge of β-Ga2O3", Phys. Rev. 140 (1965) A316.   DOI
12 M. Higashiwaki, K. Sasaki, H. Murakami, Y. Kumagai, A. Koukitu, A. Kuramata, T. Masui and S. Yamakoshi, "Recent progress in Ga2O3 power devices", Semicond Sci Technol. 31 (2016) 034001.   DOI
13 Y. Kokubun, K. Miura, F. Endo and S. Nakagomi, "Solgel prepared β-Ga2O3 thin films for ultraviolet photodetectors", Appl. Phys. Lett. 90 (2007) 031912.   DOI
14 D. Gogova, M. Schmidbauer and A. Kwasniewski, "Homo- and heteroepitaxial growth of Sn-doped β-Ga2O3 layers by MOVPE", CrystEngComm (2017) 6744.
15 K. Konishi, K. Goto, H. Murakami, Y. Kumagai, A. Kuramata, S. Yamakoshi and M. Higashiwaki, "1-kV vertical Ga2O3 field-plated Schottky barrier diodes", Appl. Phys. Lett. 110 (2017) 1103506.