• JSTS:Journal of Semiconductor Technology and Science
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• 제15권2호
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• pp.249-254
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• 2015

Solution-derived amorphous indium-gallium-zinc oxide (a-IGZO) thin-film-transistor (TFTs) were developed using a microwave irradiation treatment at low process temperature below $300^{\circ}C$. Compared to conventional furnace-annealing, the a-IGZO TFTs annealed by microwave irradiation exhibited better electrical characteristics in terms of field effect mobility, SS, and on/off current ratio, although the annealing temperature of microwave irradiation is much lower than that of furnace annealing. The microwave irradiated TFTs showed a smaller $V_{th}$ shift under the positive gate bias stress (PGBS) and negative gate bias stress (NGBS) tests owing to a lower ratio of oxygen vacancies, surface absorbed oxygen molecules, and reduced interface trapping in a-IGZO. Therefore, microwave irradiation is very promising to low-temperature process.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2000년도 추계학술대회 논문집 학회본부 C
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• pp.416-418
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• 2000

Thin films of phase-pure perovskite $(Pb_{0.72}La_{0.28})Ti_{0.93}O_3$ (PLT) were deposited in-situ onto Pt/Ti/$SiO_2$/Si substrates by pulsed laser deposition. We have systematically investigated the variation of grain sizes depending on the process condition. Both in-situ annealing and ex-situ annealing treatments have been compared depending on the annealing time. The grain sizes of PLT thin films were successfully controlled 260 to 350 nm by changing process parameters. Microstructural and electrical properties of the film were investigated by C-V measurement, leakage current measurement and SEM. Two-step process to grow $(Pb_{0.72}La_{0.28})Ti_{0.93}O_3$ (PLT) films was adopted and verified to be useful to enlarge the grain size of the film and to enhance the leakage current characteristics.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.117-118
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• 2008

High-pressure deuterium annealing process is proposed and investigated for enhanced electrical and reliability properties of 512Mb DDR2 DRAM without increase in process complexity. High pressure deuterium annealing (HPDA) introduced during post metal anneal (PMA) improves not only DRAM performance but also reliability characteristics of MOSFET. Compared with a control sample annealed in a conventional forming gas, additional annealing in a high pressure deuterium ambient at $400^{\circ}C$ for 30 min decreased G1DL current and junction leakage. The improvements can be explained by deuterium incorporation at $SiO_2$/Si substrate interface near isolation trench edge.

• 반도체디스플레이기술학회지
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• 제21권3호
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• pp.105-109
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• 2022

For the realization of higher reliable transition metal dichalcogenide layer, molybdenum disulfide was formed on sapphire substrate by direct current sputtering and subsequent rapid thermal annealing process. Unlike RF sputtered MoS₂ thin films, DC sputtered showed no irregular holes and protrusions after annealing process from scanning electron microscope images. From atomic force microscope results, it was possible to investigate that surface roughness of MoS₂ thin films were more dependent on DC sputtering power then annealing temperature. On the other hand, the Raman scattering spectra showed the dependency of significant E¹_2g and A¹_g peaks on annealing temperatures.

• 한국기계가공학회지
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• 제17권4호
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• pp.130-136
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• 2018

In this paper, the effects of different 3D printing parameters including laminated angle and annealing temperature, were observed for their effects on tensile testing. In 3D printing, a filament is heated quickly, extruded, and then cooled rapidly. Because plastic is a poor heat conductor, it heats and cools unevenly causing the rapid heating and cooling to create internal stress within the printed part. Therefore, internal stress can be removed using annealing and to increase tensile strength and strain. During air cooling at annealing temperature $140^{\circ}C$, the strain of laminated angle $45^{\circ}$ specimens tended to increase by 46% while the tensile stress tended to increase by 7.4%. During oven cooling at annealing temperature $140^{\circ}C$, the strain of laminated angle $45^{\circ}$ specimens tended to increase by 34% while the tensile stress tended to increase by 22.2%. In this study, we found "3D printing with annealing" eliminates internal stress and increases the strength and stiffness of a printed piece. On the microstructural level, annealing reforms the crystalline structures to even out the areas of high and low stress, which created fewer weak areas. These results are very useful for making 3D printed products with a mechanical strength that is suitable for applications.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.203-203
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• 2014

Due to the electrical properties such as narrow bandgap and high carrier mobility, indium antimonide (InSb) has attracted a lot of attention recently. For the fabrication of electronic or photonic devices, an etching process is required. However, during etching process, enegetic ions can induce structural damages on the bombarded surface. Especially, InSb has a very weak binding energy between In atom and Sb stom, it can be easily damaged by impingement of ions. In the previous work, to evaluate the surface properties after Ar ion beam etching, the plasma-induced structural damage on the etched InSb(100) surface had been examined by resonant Raman spectroscopy. As a result, we demonstrated the relation between the enhanced transverse optical(TO) peak in the Raman spectrum and the ion-induced structral damage near the InSb surface. In this work, the annealing effect on the etched InSb(100) surface has investigated. Annealing process was performed at $450^{\circ}C$ for 10 minute under antimony ambient. As-etched InSb(100) surface had shown a strongly enhanced TO scattering intensity in the Raman spectrum. However, the annealing process with antimony flowing caused the intensity to recover due to the structural reordering and the reduction of antimony vacancies. It proves that the origin of enhanced TO scattering is Sb vacancies. Furthermore, it shows that etching-induced damage can be cured effectively by the following annealing process under Sb ambient.

• 방사선산업학회지
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• 제3권1호
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• pp.7-11
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• 2009

Hard magnet was usually used by coating $SiO_2$ ceramic thick films followed by the thermal annealing process. In this work, the alternative annealing process for NdFeB magnets using e-beam sources (1~2 MeV, 50~400 kGy) was investigated. NdFeB magnets was coated with ceramic thick films using the spray method. The optimal annealing parameter for e-beam source reveals to be 1 MeV and 300 kGy. The sample prepared at 1 MeV and 300 kGy was characterized by the analysis of the surface morphology, film hardness, adhesion and chemical stability. The mechanical property of thick film, especially film hardness, is better than that of thermal annealed samples at $180^{\circ}C$. As a result, e-beam annealing process will be one of candidate and attractive heat treatment process. In future, manufacturing process will be carried out in cooperation with the magnet company.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2003년도 International Meeting on Information Display
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• pp.910-913
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• 2003

In order to enhance performance, stability, and brightness of inorganic blue-light emitting EL device, barrier layer structure and pulsed laser annealing(PLA) treatment were introduced. The barrier layer structure was utilized for improving brightness of the device and instead of thermal annealing, pulsed laser annealing process was used. From this study, optimum barrier layer thickness and number of pulsed laser irradiation are established.

• 산업경영시스템학회지
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• 제21권45호
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• pp.25-32
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• 1998

A modified simulated annealing algorithm is proposed and applied to the permutation flowshop scheduling with the makespan objective. Based on the job deletion and insertion method, a newly defined Max-min perturbation scheme is proposed to obtain a better candidate solution in the simulated annealing process. The simulation experiments are conducted to evaluate the effectiveness of the proposed algorithm against the existing heuristics and results are reported.

• Transactions on Electrical and Electronic Materials
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• 제16권2호
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• pp.62-64
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• 2015

We have investigated zinc tin oxide (ZTO) thin films under various silicon ratios. ZTO TFTs were fabricated by solution processing with the bottom gate structure. Furthermore, annealing process was performed at different temperatures in various annealing conditions, such as air, vacuum and wet ambient. Completed fabrication of ZTO TFT, and the performance of TFT has been compared depending on the annealing conditions by measuring the transfer curve. In addition, structure in ZTO thin films has been investigated by X-ray diffraction spectroscopy (XRD) and Scanning electron microscope (SEM). It is confirmed that the electrical performance of ZTO TFTs are improved by adopting optimized annealing conditions. Optimized annealing condition has been found for obtaining high mobility.