Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)

The Korean Institute of Electrical Engineers (대한전기학회)
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Enhancement of Dielectric Properties of Pb(La,Ti)$O_3$ Thin Films Using Two-step Process

Two-Step Process를 이용한 Pb(La,Ti)$O_3$ 박막의 유전특성 향상 연구

  • Hur, Chang-Hoi (Department of Electronic and Electrical Engineering, Yonsei Univ.) ;
  • Lee, Sang-Yeol (Department of Electronic and Electrical Engineering, Yonsei Univ.)
  • 허창회 (연세대학교 전기전자공학과) ;
  • 이상렬 (연세대학교 전기전자공학과)
  • Published : 2000.11.25
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Abstract

Thin films of phase-pure perovskite $(Pb_{0.72}La_{0.28})Ti_{0.93}O_3$ (PLT) were deposited in-situ onto Pt/Ti/$SiO_2$/Si substrates by pulsed laser deposition. We have systematically investigated the variation of grain sizes depending on the process condition. Both in-situ annealing and ex-situ annealing treatments have been compared depending on the annealing time. The grain sizes of PLT thin films were successfully controlled 260 to 350 nm by changing process parameters. Microstructural and electrical properties of the film were investigated by C-V measurement, leakage current measurement and SEM. Two-step process to grow $(Pb_{0.72}La_{0.28})Ti_{0.93}O_3$ (PLT) films was adopted and verified to be useful to enlarge the grain size of the film and to enhance the leakage current characteristics.

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