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A Study on the Characteristics of 2-Dimensinal Molybdenum Disulfide Thin Films formed on Sapphire Substrates by DC Sputtering and Rapid Thermal Annealing  

Qi, Yuanrui (Department of Electronic Engineering, Gachon University)
Ma, Sang Min (Department of Electronic Engineering, Gachon University)
Jeon, Yongmin (Department of Biomedical Engineering, Gachon University)
Kwon, Sang Jik (Department of Electronic Engineering, Gachon University)
Cho, Eou-Sik (Department of Electronic Engineering, Gachon University)
Publication Information
Journal of the Semiconductor & Display Technology / v.21, no.3, 2022 , pp. 105-109 More about this Journal
Abstract
For the realization of higher reliable transition metal dichalcogenide layer, molybdenum disulfide was formed on sapphire substrate by direct current sputtering and subsequent rapid thermal annealing process. Unlike RF sputtered MoS2 thin films, DC sputtered showed no irregular holes and protrusions after annealing process from scanning electron microscope images. From atomic force microscope results, it was possible to investigate that surface roughness of MoS2 thin films were more dependent on DC sputtering power then annealing temperature. On the other hand, the Raman scattering spectra showed the dependency of significant E12g and A1g peaks on annealing temperatures.
Keywords
Molybdenum disulfide ($MoS_2$); Direct current(DC) sputtering; Rapid thermal annealing (RTA); Sputtering power; RTA temperature;
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