Proceedings of the Korean Vacuum Society Conference (한국진공학회:학술대회논문집)
- 2014.02a
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- Pages.203-203
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- 2014
Effect of Annealing under Antimony Ambient on Structural Recovery of Plasma-damaged InSb(100) Surface
- Seok, Cheol-Gyun ;
- Choe, Min-Gyeong ;
- Jeong, Jin-Uk ;
- Park, Se-Hun ;
- Park, Yong-Jo ;
- Yang, In-Sang ;
- Yun, Ui-Jun
- 석철균 (서울대학교 재료공학부) ;
- 최민경 (이화여자대학교 물리학과) ;
- 정진욱 (서울대학교 재료공학부) ;
- 박세훈 (서울대학교 재료공학부) ;
- 박용조 (차세대융합기술연구원) ;
- 양인상 (이화여자대학교 물리학과) ;
- 윤의준 (서울대학교 재료공학부)
- Published : 2014.02.10
Abstract
Due to the electrical properties such as narrow bandgap and high carrier mobility, indium antimonide (InSb) has attracted a lot of attention recently. For the fabrication of electronic or photonic devices, an etching process is required. However, during etching process, enegetic ions can induce structural damages on the bombarded surface. Especially, InSb has a very weak binding energy between In atom and Sb stom, it can be easily damaged by impingement of ions. In the previous work, to evaluate the surface properties after Ar ion beam etching, the plasma-induced structural damage on the etched InSb(100) surface had been examined by resonant Raman spectroscopy. As a result, we demonstrated the relation between the enhanced transverse optical(TO) peak in the Raman spectrum and the ion-induced structral damage near the InSb surface. In this work, the annealing effect on the etched InSb(100) surface has investigated. Annealing process was performed at