Journal of the Semiconductor & Display Technology (반도체디스플레이기술학회지)

The Korean Society Of Semiconductor & Display Technology (한국반도체디스플레이기술학회)
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A Study on the Characteristics of 2-Dimensinal Molybdenum Disulfide Thin Films formed on Sapphire Substrates by DC Sputtering and Rapid Thermal Annealing

DC 스퍼터링 및 급속 열처리 공정을 이용한 사파이어 기판상에 형성된 2차원 황화몰리브덴 박막의 특성에 관한 연구

  • Qi, Yuanrui (Department of Electronic Engineering, Gachon University) ;
  • Ma, Sang Min (Department of Electronic Engineering, Gachon University) ;
  • Jeon, Yongmin (Department of Biomedical Engineering, Gachon University) ;
  • Kwon, Sang Jik (Department of Electronic Engineering, Gachon University) ;
  • Cho, Eou-Sik (Department of Electronic Engineering, Gachon University)
  • 척원서 (가천대학교 전자공학과) ;
  • 마상민 (가천대학교 전자공학과) ;
  • 전용민 (가천대학교 의공학과) ;
  • 권상직 (가천대학교 전자공학과) ;
  • 조의식 (가천대학교 전자공학과)
  • Received : 2022.09.13
  • Accepted : 2022.09.20
  • Published : 2022.09.30
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Abstract

For the realization of higher reliable transition metal dichalcogenide layer, molybdenum disulfide was formed on sapphire substrate by direct current sputtering and subsequent rapid thermal annealing process. Unlike RF sputtered MoS2 thin films, DC sputtered showed no irregular holes and protrusions after annealing process from scanning electron microscope images. From atomic force microscope results, it was possible to investigate that surface roughness of MoS2 thin films were more dependent on DC sputtering power then annealing temperature. On the other hand, the Raman scattering spectra showed the dependency of significant E12g and A1g peaks on annealing temperatures.

Keywords

Acknowledgement

본 논문은 2022년도 정부(산업통상자원부)의 재원으로 한국산업기술진흥원(KIAT)의 지원을 받아 수행된 연구임(No. P0012453, 2022년 산업혁신인재성장지원사업). 본 성과는 또한 정부(과학기술정보통신부)의 재원으로 한국연구재단의 지원을 받아 수행된 연구임(No. 2020R1F1A1076505).

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