• Journal of the Korean Society for Heat Treatment
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• v.19 no.4
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• pp.208-218
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• 2006

The effects of the grain size on the magnetic properties in extra-low carbon steel after strain annealing were investigated. Two kinds of sample were prepared. One is the annealed sheet, which was annealed at $670^{\circ}C$ and $850^{\circ}C$ for various time periods after cold rolling. The other is the strain annealed sheet, which was temper rolled by 0.4% and subsequently strain annealed at the temperature ranging between $670^{\circ}C$ and $850^{\circ}C$ for various time periods. The grains after strain annealing became more coarse than those after primary annealing. The grains were coarsened due to the strain induced grain boundary migration (SIGM). It was found that the permeability tended to be increased and coercivity tended to be decreased with the increase of grain size. The optimum magnetic properties was achieved after strain annealing at $850^{\circ}C$ for 30 minites. Under this condition, the coercivity was measured to be 0.6 and the permeability was measured up to be 13000.

• Journal of the Korean Society for Heat Treatment
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• v.25 no.5
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• pp.239-243
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• 2012

$SnO_2$ thin films were prepared on the Si substrate by radio frequency (RF) magnetron sputtering and then post deposition vacuum annealed to investigate the effect of annealing temperature on the structural properties and hydrogen gas sensitivity of the films. The films that annealed at $300^{\circ}C$ show the higher sensitivity than the other films annealed at $150^{\circ}C$. From atomic force microscope observation, it is supposed that post deposition annealing promotes the rough surface and also, increase gas sensitivity of $SnO_2$ films for hydrogen gas. These results suggest that the vacuum annealed $SnO_2$ thin films at optimized temperatures are promising for practical high-performance hydrogen gas sensors.

• Journal of the Korean Ceramic Society
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• v.48 no.2
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• pp.200-204
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• 2011

Increase of surface area and decrease of band gap in $TiO_2$ semiconductors are significant to improve the efficiency of water splitting by photoelectrolysis. In this study $TiO_2$ nanotube arrays with ~7 um length and ~100 nm diameter were fabricated by an anodizing technique of titanium foils using DMSO (dimethyl sulfoxide)-based electrolytes. Then to control the band gap of the $TiO_2$ arrays, they were annealed at $550^{\circ}C$ for up to 180 min in $NH_3$ gas ambient. The samples annealed in $NH_3$ gas for 30 min and 60 min showed superior photo-conversion efficiency for water splitting under white and visible light. A $TiO_2$ nanotube annealed in $NH_3$ gas ambient for a period longer than 120 min showed 1 order higher leakage current. It is believed that the decrease of band gap and increase of conductivity in $TiO_2$ nanotube arrays due to $NH_3$ gas treatments result in the superior water-splitting performance.

• Journal of the Korean Ceramic Society
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• v.46 no.4
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• pp.436-440
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• 2009

The structural and electrical properties of $Al_2O_3/La_2O_3/Al_2O_3$ (ALA) films using a tunnel oxide annealed at various temperatures were investigated. The program/erase properties of the ALA films using the tunnel oxide annealed at $600^{\circ}C$ were superior to others. The program/erase voltage and time of the ALA films using the tunnel oxide annealed at $600^{\circ}C$ were 11 V for 10 ms (program) and -11 V for 100 ms (erase), respectively, and the corresponding memory window was about 1.59 V. In the retention test, the $V_{th}$ distributions of all films were not changed up to about $10^4$ cycles. In this study, all data showed sufficient characteristics to be used in flash memory devices.

• Journal of the Korean Society of Industry Convergence
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• v.2 no.2
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• pp.61-68
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• 1999

The variety of crystalline structure and mechanical properties of PP filament treated with dry heat treatment at different draw ratio has been studied. Crystalline structure and mechanical properties of annealed PP filament at different draw ratio has been examined by XRD, UTM, and density method. Heat treatment has been carried out $100^{\circ}C$, $120^{\circ}C$ $140^{\circ}C$ for 30min. in dry oven. From the results of this study, it found the following facts. It was found that the crystallinity and crystallite size of (110) plane of sample were increased with increasing of annealed temperature and draw ratio. The crystalline form of annealed sample which was undrawn showed ${\alpha}$, ${\beta}$ mixing form below $120^{\circ}C$ and showed ${\alpha}$ form at $140^{\circ}C$. But the crystalline form of annealed sample which was drawn showed ${\alpha}$ form at $120^{\circ}C$. Initial modulus and tensile strength were increased with increasing of annealing temperature, and the degree of orientation was decreased with decreasing of annealing temperature.

• Korean Journal of Materials Research
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• v.28 no.2
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• pp.113-117
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• 2018

Effects of annealing temperature on the microstructure and mechanical properties through thickness of a cold-rolled Cu-3.0Ni-0.7Si alloy were investigated in detail. The copper alloy with thickness of 3 mm was rolled to 50 % reduction at ambient temperature without lubricant and subsequently annealed for 0.5h at $200{\sim}900^{\circ}C$. The microstructure of the copper alloy after annealing was different in thickness direction depending on an amount of the shear and compressive strain introduced by rolling; the recrystallization occurred first in surface regions shear-deformed largely. The hardness distribution of the specimens annealed at $500{\sim}700^{\circ}C$ was not uniform in thickness direction due to partial recrystallization. This ununiformity of hardness corresponded well with an amount of shear strain in thickness direction. The average hardness and ultimate tensile strength showed the maximum values of 250Hv and 450MPa in specimen annealed at $400^{\circ}C$, respectively. It is considered that the complex mode of strain introduced by rolling effected directly on the microstructure and the mechanical properties of the annealed specimens.

• Korean Journal of Materials Research
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• v.15 no.8
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• pp.514-517
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• 2005

Effects of nitrogen and oxygen annealing on the carrier concentration, carrier mobility, electrical resistivity and PL characteristics as well as the crystallinity of ZnO films deposited on sapphire substrates by atomic layer deposition (ALD). X-ray diffraction (XRD), Scanning electron microscope (SEM), photoluminescence (PL) analyses, and Hall measurement were performed to investigate the crystallinity, optical properties and electrical properties of the ZnO thin films, respectively. According to the XRD analysis results the crystallinity of the ZnO film annealed in an oxygen atmosphere is better than that of the ZnO film annealed in a nitrogen atmosphere. Annealing undoped ZnO films grown by ALD at a high temperature above $600^{\circ}C$ improves the crystallinity and enhances W emission but deteriorates the electrical conductivity of the flms. The resistivity of the ZnO film annealed particularly at $800^[\circ}C$ in a nitrogen atmosphere is much higher than that annealed at the same temperature in an oxygen atmosphere.

• Industry Promotion Research
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• v.3 no.1
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• pp.1-5
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• 2018

$SnO_2$ films were annealed in a vaccum atmosphere conditions to research the temperature dependency of current-voltage characteristics in according to the bonding structures. The $SnO_2$ film annealed in a vacuum became an amorphous structure but films annealed in an atmosphere condition had a crystal structure. The defects or depletion layer were formed by the electron-hole combination after annealing processes, and the electrical properties were changed depending on the crystal structure, binding energy and the variation of carriers. $SnO_2$ became more crystal-structural with increasing the annealing temperature, and the current increased at $SnO_2$ film annealed at $150^{\circ}C$ with Schottky current.

• Proceedings of the KIEE Conference
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• 2000.07c
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• pp.1772-1775
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• 2000

We have fabricated poly-Si TFTs by two-step crystallizaton. Poly-Si films have been prepared by furnace annealing(FA) and rapid thermal annealing(RTA) followed by subsequent the post-annealing, excimer laser annealing. The measured crystallinity of RTA and FA annealed poly-Si film is 77% and 68.5%, respectively. For two-step annealed poly-Si film, the crystallinity has been drastically to 87.7% and 86.3%. The RMS surface roughness from AFM results have been improved from 56.3${\AA}$ to 33.5${\AA}$ after post annealing. The measured transfer characteristics of the two-step annealed poly-Si TFTs have been improved significantly for the both FA-ELA and RTA-ELA. Leakage currents of two-step annealed poly-Si TFTs are lower than that of the devices by FA and RTA. From these results, we can describe the fact that the intra-grain defects has been cured drastically by the post-annealing.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2002.11a
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• pp.69-71
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• 2002

$(Bi, La)Ti_{3}O_{12}(BLT)$ ferroelectric thin films were prepared on $Al_{2}O_{3}/Si$ substrates by the sol-gel method. The as-coated films were post-annealed at the temperature of $650^{\circ}C$ and $700^{\circ}C$ for 30 min. The crystallinty, surface morphologies and electrical properties were affected by the annealing temperatures. The BLT films annealed at above $650^{\circ}C$ exhibited typical bismuth layered perovskite structures with (00$\ell$) preferred orientation. The granular shaped grains with a size of approximately 90nm was formed in the film sample annealed at $700^{\circ}C$. The memory window volatge of the BLT film was 2.5V. The leakage current of BLT films annealed at $650^{\circ}C$ was about $1\times10^{-7}A/\textrm{cm}^2$ at 3V.