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http://dx.doi.org/10.21186/IPR.2018.3.1.001

Element to Change the Bonding Structures of SnO2 Thin Films  

Oh, Teresa (Dept. of Semiconductor Eng., Cheongju University)
Publication Information
Industry Promotion Research / v.3, no.1, 2018 , pp. 1-5 More about this Journal
Abstract
$SnO_2$ films were annealed in a vaccum atmosphere conditions to research the temperature dependency of current-voltage characteristics in according to the bonding structures. The $SnO_2$ film annealed in a vacuum became an amorphous structure but films annealed in an atmosphere condition had a crystal structure. The defects or depletion layer were formed by the electron-hole combination after annealing processes, and the electrical properties were changed depending on the crystal structure, binding energy and the variation of carriers. $SnO_2$ became more crystal-structural with increasing the annealing temperature, and the current increased at $SnO_2$ film annealed at $150^{\circ}C$ with Schottky current.
Keywords
$SnO_2$; XRD; Capacitance; PN contact; Schottky contact; ZTO; XPS;
Citations & Related Records
Times Cited By KSCI : 3  (Citation Analysis)
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