• 한국정보통신학회논문지
• /
• 제8권7호
• /
• pp.1424-1428
• /
• 2004

본 논문에서는 DSL 모뎀의 입출력단에 응용 가능한 수신단의 CMOS 필터를 설계 제안하였다. 제안된 필터는 저전력 특성을 위한 저전압 동작이 가능하며, 저역통과 특성과 고역통과 특성이 혼합된 연속시간 필터 형태로 송신단과 수신단에 위치하여 각종 DSL 시스템에 응용가능하다. 수신단에서 차단주파수는 각각 138kHz와 1.1MHz로서 요구되는 DSL 시스템의 표준 설계사양에 부합하도록 설계하였다. 선형성면에서 개선된 특성을 나타낸 저전압 gmr 방식의 적분기가 필터 설계를 위한 기본블럭으로 이용되었다. 설계된 필터는 0.25${\mu}m$ CMOS n-well 공정 파라미터를 이용한 HSPICE 시뮬레이션을 통해 그 특성이 검증되었다.

• 전기학회논문지
• /
• 제57권10호
• /
• pp.1888-1892
• /
• 2008

In this paper, a new parallel CMOS self-bias differential amplifier is designed to use in high-speed analog signal processing circuits. The designed parallel CMOS self-bias differential amplifier is developed by using internal biasing circuits and the complement gain stages which are parallel connected. And also, the parallel architecture of the designed parallel CMOS self-bias differential amplifier can improve the gain and gain-bandwidth product of the typical CMOS self-bias differential amplifier. With 1.8V $0.8{\mu}m$ CMOS process parameter, the results of HSPICE show that the designed parallel CMOS self-bias differential amplifier has a dc gain and a gain-bandwidth product of 64 dB and 49 MHz respectively.

• 전자공학회논문지A
• /
• 제33A권4호
• /
• pp.136-141
• /
• 1996

In this paper, a new CMOS on-chip current reference circit for memory, operational amplifiers, comparators, and data converters is proposed. The reference current is almost independent of temeprature and power-supply variations. In the proposed circuit, the current component with a positive temeprature coefficient cancels that with a negative temperature coefficient each other. While conventional curretn and voltage reference circuits require BiCMOS or bipolar process, the presented circuit can be integrated on a single chip with other digiral and analog circits using a standard CMOS process and an extra mask is not needed. The prototype is fabricated employing th esamsung 1.0um p-well double-poly double-metal CMOS process and the chip area is 300um${\times}$135 um. The proposed reference current circuit shows the temperature coefficient of 380 ppm/.deg. C with the temperature changes form 30$^{\circ}C$ to 80$^{\circ}C$, and the output variation of $\pm$ 1.4% with the supply voltage changes from 4.5 V to 5.5 V.

• 한국정보통신학회논문지
• /
• 제17권2호
• /
• pp.378-384
• /
• 2013

본 논문에서는 칩 내부의 온도를 측정하기 위한 CMOS 온도 센서가 제안된다. 제안하는 온도 센서는 칩 내부의 온도에 비례하는 전압을 생성하는 proportional-to-absolute-temperature (PTAT) 회로와 디지털 인터페이스를 위한 4-비트 아날로그-디지털 변환기로 구성된다. 소면적을 가지는 PTAT 회로는 CMOS 공정에서 vertical PNP 구조를 이용하여 설계된다. 온도변화에 둔감한 저전력 4-비트 아날로그-디지털 변환기를 구현하기 위해 아날로그 회로를 최소로 사용하는 축차근사형 아날로그-디지털 변환기가 이용되며, 이를 위해 커패시터-기반 디지털-아날로그 변환기와 시간-도메인 비교기를 이용한다. 제안된 온도 센서는 2.5V $0.25{\mu}m$ 1-poly 6-metal CMOS 공정에서 제작되었고, $50{\sim}150^{\circ}C$ 온도 범위에서 동작한다. 구현된 온도 센서의 면적과 전력 소모는 각각 $130{\times}390{\mu}m^2$과 $868{\mu}W$이다.

• 한국전자통신학회논문지
• /
• 제15권3호
• /
• pp.479-486
• /
• 2020

이 논문에서는 아날로그 전류모드 인공지능 프로세서에서 핵심 디바이스 중에 하나인 아날로그 전류 모드 곱셈기 회로의 선형성과 동적범위 향상을 위한 설계 기법을 소개한다. 제안하는 회로는 4 quadrant Translinear loop를 NMOS 트랜지스터만으로 구성하여, 트랜지스터의 물리적 Mismatch를 최소화하는 설계로 0.35㎛ CMOS 공정에서 117㎛ × 109㎛로 구현가능하였으며, 최대 전고조파왜율 0.3% 의 선형성을 확보할 수 있었다. 제안한 아날로그 전류모드 곱셈기는 전류모드 인공지능 프로세서의 핵심 회로로 유용할 것으로 기대된다.

• The Journal of the Acoustical Society of Korea
• /
• 제18권3E호
• /
• pp.44-48
• /
• 1999

The CMOS four-quadrant analog multiplier for low-voltage low-power applications are presented in this thesis. The circuit approach is based on the characteristic of the LV (Low-Voltage) composite transistor which is one of the useful analog building block. SPICE simulations are carried out to examine the performances of the designed multiplier. Simulation results are obtained by 0.6㎛ CMOS parameters with 2V power supply. The basic configuration of the multiplier is the CMOS Gilbert cell with two LV composite transistors. The linear input range of the multiplier is over ±0.4V with a linearity error of less than 1.3%. The measured -3dB bandwidth is 288MHz and the power dissipation is 255 ㎼.

• 전자공학회논문지A
• /
• 제33A권3호
• /
• pp.135-139
• /
• 1996

It is difficult to fabricate precise resistors for the analog integrated circuits using MOS technology. Until now polysilicon resistors were used at the analog integrated circuits, but some deviations of resistance and sensitive variation processes still cause their misactions. In order to improve these misactions, we suggest a CMOS resistor cell which provides precise resistance and excellant linearity. Also we designed the second order active low pass filter using the CMOS resistor cells and verified their superior performances compared to the actual resistors.

• 대한전기학회논문지:전기물성ㆍ응용부문C
• /
• 제55권8호
• /
• pp.399-403
• /
• 2006

An accurate constant output voltage provided by the analog memory cell may be used by the low power oscillator to generate an accurate low frequency output signal. This accurate low frequency output signal may be used to maintain long-term timing accuracy in host devices during sleep modes of operation when an external crystal is not available to provide a clock signal. Further, incorporation of the analog memory cell in the low power oscillator is fully implementable in a 0.35um Samsung standard CMOS process. Therefore, the analog memory cell incorporated into the low power oscillator avoids the previous problems in a oscillator by providing a temperature-stable, low power consumption, size-efficient method for generating an accurate reference clock signal that can be used to support long sleep mode operation.

• 전기학회논문지
• /
• 제62권9호
• /
• pp.1255-1259
• /
• 2013

A calculation method of the breakdown voltage for the Drain region with the spherical structure in high voltage analog CMOS is proposed. The Drain depletion region is divided into many sub-regions and the doping concentration of each sub-region is assumed to be constant. The field in each sub-region is calculated by the integration of the net charge and the breakdown voltage is calculated using the ionization integral method. The breakdown voltage calculated using the proposed method shows the maximum relative error of 3.3% compared with the result of the 2-dimensional device simulation using BANDIS.

• 대한전기학회논문지:시스템및제어부문D
• /
• 제53권6호
• /
• pp.425-432
• /
• 2004

In this paper, we introduce the analog memory fabricated in a 0.35${\mu}{\textrm}{m}$ single poly standard CMOS process. We measured the programming characteristics of the analog memory cell such as linearity, reliability etc. Finally, we found that the characteristics of the programming of the cell depend on the magnitude and the width of the programming pulse, and that the accuracy of the programming within 10mV is feasible under the optimal condition. In order to standardize the characteristics of the cell, we have investigated numbers of cells. Thus we have used a program named Labview and a data acquisition board to accumulate the data related to the programming characteristics automatically.