• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.16 no.6
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• pp.465-471
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• 2023

This paper proposes a comparator structure that improves the noise and output delay of a single-slope ADC(SS-ADC) used in CMOS Image Sensor (CIS). To improve the noise and delay characteristics of the output, a comparator structure using the miller effect is designed by inserting a capacitor between the output node of the first stage and the output node of the second stage of the comparator. The proposed comparator structure improves the noise, delay of the output, and layout area by using a small capacitor. The CDS counter used in the single slop ADC is designed using a T-filp flop and bitwise inversion circuit, which improves power consumption and speed. The single-slope ADC also performs dual CDS, which combines analog correlated double sampling (CDS) and digital CDS. By performing dual CDS, image quality is improved by reducing fixed pattern noise (FPN), reset noise, and ADC error. The single-slope ADC with the proposed comparator structure is designed in a 0.18-㎛ CMOS process.

• Proceedings of the IEEK Conference
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• 2001.06b
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• pp.45-48
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• 2001

An programmable current-mode folding and interpolation analog to digital converter (ADC) with programmable interpolator is proposed in this paper. A programmable interpolator is employed not only to vary the resolution of data converter, but also to decrease a power dissipation within the ADC. Because of varying the number of interpolation circuits, resolution is vary from 6 to 10bit. The designed ADC fabricated by a 0.6${\mu}{\textrm}{m}$ n-well CMOS double metal/single poly process. The experimental result shows the power dissipation from 26 to 87mW with a power supply of 3.3V.

• Proceedings of the IEEK Conference
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• 2001.06b
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• pp.153-156
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• 2001

This paper describes a 12-bit high speed pipeline CMOS A/D converter. The A/D converter simulated the 0.35${\mu}{\textrm}{m}$ n-well CMOS technology. The results show DNL and INL of $\pm$0.5LSB and $\pm$1.0LSB, conversion rate of 100Msamples/s, and power dissipation of 500㎽ with a power supply of 3.3V

• Proceedings of the IEEK Conference
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• 1999.06a
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• pp.986-989
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• 1999

An 12bit current-mode folding and interpolation analog to digital converter (ADC) with multiplied folding amplifiers is proposed in this paper. A current - mode multiplied folding amplifier is employed not only to reduced the number of reference current source, but also to decrease a power dissipation within the ADC. The designed ADC fabricated by a 0.6${\mu}{\textrm}{m}$ n-well CMOS double metal/single poly process. The simulation result shows the power dissipation of 280㎽ with a power supply of 5V.

• Journal of information and communication convergence engineering
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• v.15 no.4
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• pp.232-236
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• 2017

A digital vacuum pressure sensor is designed, fabricated, and characterized using a packaged MEMS analog Pirani gauge. The packaged MEMS analog Pirani gauge requires a current source to heat up a heater in the Pirani gauge. To investigate the feasibility of digitization for the analog Pirani gauge, its implementation is performed with a zero-temperature coefficient current source and microcontroller that are commercially available. The measurement results using the digital vacuum pressure sensor showed that its operating range is 0.05-760 Torr, which is the same as the measurement results of the packaged MEMS analog pressure sensor. The results confirm that it is feasible to integrate the analog Pirani gauge with a commercially available current source and microcontroller. The successful hybrid integration of the analog Pirani gauge and digital circuits is an encouraging result for monolithic integration with a precision current source and ADCs in the state of CMOS dies.

• ETRI Journal
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• v.26 no.6
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• pp.560-564
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• 2004

An analog front-end circuit for ISO/IEC 14443-compatible radio frequency identification (RFID) interrogators was designed and fabricated by using a $0.25{\mu}m$ double-poly CMOS process. The fabricated chip was operated using a 3.3 Volt single-voltage supply. The results of this work could be provided as reusable IPs in the form of hard or firm IPs for designing single-chip ISO/IEC 14443-compatible RFID interrogators.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.28 no.11A
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• pp.929-935
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• 2003

An analog/digital mixed mode ASIC for network synchronization of ATM switching system has been designed and fabricated. This ASIC generates a 234.7/46.94 ㎒ system clock and 77.76/19.44 ㎒ user clock using 46.94 ㎒ transmitted clocks from other systems. It also includes digital circuits for checking and selecting of the transmitted clocks. For effective ASIC design, full custom technique is used in 2 analog PLL circuits design, and standard cell based technique is used in digital circuit design. Resistors and capacitors for analog circuits are specially designed which can be fabricated in general CMOS technology, so the chip can be implemented in 0.8$\mu\textrm{m}$ digital CMOS technology with no expensive. Testing results show stable 234.7 ㎒ and 19.44 ㎒ clocks generation with each 4㎰ and 17㎰ of low ms jitter.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.6
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• pp.119-124
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• 2008

Transimpedance amplifier(TIA) is the most significant element to determine the performance of the optical receiver, and thus the TIA must satisfy tile design requirements of high gain and wide bandwidth. In f)is paper, we propose a novel single chip optical receiver that exploits an analog adaptive equalizer and a limiting amplifier to enhance the gain and bandwidth performance, respectively. The proposed optical receiver is designed by using a $0.13{\mu}m$ CMOS process and its post-layout simulations show $120dB{\Omgea}$ transimpedance gain and 5.88GHz bandwidth. The chip core occupies the area of $0.088mm^2$, due to utilizing the negative impedance converter circuit rather than using on-chip passive inductors.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.33 no.11C
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• pp.963-969
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• 2008

This paper presents 6bit 100MHz Interpolation Flash Analog-to-Digital Converter, which can be applied to the Receiver of Wireless Tele-communication System. The 6bit 100MHz Flash Analog-to-Digital Converter simplifies and integrates S-R latch which multiplies as the resolution increases. Whereas the conventional NAND based S-R latch needed eight MOS transistors, this Converter was designed with only six, which makes the Dynamic Power Dissipation of the A/D Converter reduced up to 12.5%. The designed A/D Converter went through $0.18{\mu}m$ CMOS n-well 1-poly 6-metal process to be a final product, and the final product has shown 282mW of power dissipation with 1.8V of Supply Voltage, 100MHz of conversion rate. And 35.027dBc, 31.253dB SFDR and 4.8bits, 4.2bits ENOB with 12.5MHz, 50MHz of each input frequency.

• Journal of the Institute of Electronics Engineers of Korea SC
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• v.37 no.3
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• pp.44-54
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• 2000

In this paper, a design methodology for the frequency-adaptive negative-delay circuit which can be implemented in standard CMOS memory process is proposed. The proposed negative-delay circuit which is a basic type of the analog SMD (synchronous mirror delay) measures the time difference between the input clock period and the target negative delay by utilizing analog behavior and repeats it in the next coming cycle. A new technology that compensates the auxiliary delay related with the output clock in the measure stage differentiates the Proposed method from the conventional method that compensates it in the delay-model stage which comes before the measure stage. A wider negative-delay range especially prominent in the high frequency performance than that in the conventional method can be realized through the proposed technology. In order to implement the wide locking range, a new frequency detector and the method for optimizing the bias condition of the analog circuit are suggested. An application example to the clocking circuits of a DDR SDRAM is simulated and demonstrated in a 0.6 ${\mu}{\textrm}{m}$ n-well double-poly double-metal CMOS technology.