• 제목/요약/키워드: Aluminum Nitride

검색결과 195건 처리시간 0.026초

아크로 증착된 TiAlN 박막의 특성 연구

  • 정재훈;양지훈;박혜선;송민아;정재인
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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    • pp.269-269
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    • 2011
  • 티타늄-알루미늄(Titanium-Aluminum) 질화물(Nitride)은 고경도 난삭재의 고능률 절삭 분야에 사용되는 공구의 수명 향상을 위한 표면처리 소재로 각광을 받고 있다. 건식고속가공을 효과적으로 수행하기 위해서는 코팅막 재료가 가공 중 발생하는 고온에서도 견디는 우수한 내산화성을 지니면서 내마모, 내충격 특성등의 기계적 성질이 우수한 코팅을 필요로 하며 이러한 분야에 TiAlN을 적용하기 위한 많은 연구가 진행되고 있다. 본 연구에서는 아크(Cathodic Arc) 코팅을 시스템을 이용하여 N2 유량변화에 따라 TiAlN 박막을 제조하고 그 특성을 평가하였다. 아크 소스에 장착된 타겟은 120 $mm{\Phi}$, Ti : Al=50 : 50 at% 의 TiAl 타겟을 사용 하였고, 시편과 타겟 간의 거리는 약 30 cm이며, 시편은 SUS를 사용하였다. 시편을 진공용기에 장착하고 ~10-6 Torr까지 진공배기를 실시하고, Ar 가스를 진공용기 내로 공급하여 ~10-4 Torr에서 시편에 bias (Pulse : 400V)를 인가한 후 아크를 발생시켜 약 5분간 청정을 실시하였다. 플라즈마 청정이 끝나면 시편에 인가된 bias를 차단하고 N2 유량을 변화시키며 코팅을 실시하였다. 질소 유량이 증가함에 따라 색상은 회색에서 어두운 보라색으로 변화하였고 SEM 사진을 통해 Micro paticle 이 감소하는 것을 확인 할 수 있었으며 이는 질소유량이 증가 할수록 표면조도 또한 감소하는 분석결과와도 일치하였다. XRD 분석을 통해 질소 유량이 160 sccm 이상에서 TiAlN이 합성되는 것을 볼 수 있었고 질소 유량이 240 sccm일 때 가장 높은 경도를 보였다. 따라서 본 연구에서 얻어진 결과를 바탕으로 더욱 다양한 조건에서 TiAlN 코팅에 응용한다면 다양한 색상 구현과 내마모성 등에서 많은 장점을 얻을 수 있을 것으로 예상된다.

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탄소환원질화법에 의한 AlN 합성의 속도론적 연구 (Kinetic Study of Synthesis of Aluminum Nitride Using Carbon Reduction and Subsequent Nitridation Method)

  • 박형규;최영윤;남철우
    • 자원리싸이클링
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    • 제26권3호
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    • pp.39-46
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    • 2017
  • 탄소환원질화법을 이용하여 질화알루미늄(Aluminum Nitride: AlN)을 제조하는 연구를 실험실 규모로 수행하였다. 고품위 알루미나 분말과 탄소(carbon black)를 배합하여 흑연 도가니에 장입하고, 노내 분위기를 진공으로 한 다음 질소 가스를 흘려주어 온도($1,600{\sim}1,700^{\circ}C$), 시간(0.5~6 hr), $N_2$유량($4.7{\times}10^{-6}{\sim}20{\times}10^{-6}m^3/sec$), 장입 시료층 높이(0.5~20 mm)를 변화시키면서 AlN을 합성하였다. 실험결과, 고순도 알루미나와 탄소 혼합물을 질소 분위기의 $1600{\sim}1700^{\circ}C$ 온도 범위에서 반응시킬 때 반응 온도가 높을수록 생성된 AlN의 1차 입자 크기가 커지고, 반응 활성화 에너지는 382 kJ/mol로 화학 반응이 율속 단계로 판단되었다. 시험 제조한 AlN들의 산소 함량은 0.71~0.96 wt%였고, 질소는 30.7~35.1 wt%로서 상용 제품과 근접한 결과를 나타내었다.

세라믹 방열 복합체의 열전도도 분석 및 Wetting Process를 이용한 SiC/에폭시 복합체 (Thermal Conductivity of Thermally Conductive Ceramic Composites and Silicon Carbide/Epoxy Composites through Wetting Process)

  • 황용선;김주헌;조원철
    • 폴리머
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    • 제38권6호
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    • pp.782-786
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    • 2014
  • 세라믹 방열 복합체의 특성 비교를 위해 casting method로 제작하였으며, 이들의 광학적 이미지와 단면 FE-SEM 분석을 실시하였다. 각각의 복합체의 열전도성 특성을 비교 분석하였으며, silicon carbide(SiC)의 분산도 문제를 해결하기 위해 wetting process를 도입하여 SiC/epoxy 복합체를 제작하였다. 기존의 방법에서 발견된 복합체 내공극과 분산도 문제가 wetting process를 통해 향상되었으며, 충전제 함량에 따른 열전도성 특성을 분석하였다. SiC 복합체의 함량에 따른 공극률 해석을 통해 70 wt% SiC 복합체에서 가장 높은 열전도도 값을 보였으며, 이들의 단면 FE-SEM 분석을 통해 복합체 내의 충전제 분산도를 확인하였다.

Effect of First-Stage Growth Manipulation and Polarity of SiC Substrates on AlN Epilayers Grown Using Plasma-Assisted Molecular Beam Epitaxy

  • Le, Duy Duc;Kim, Dong Yeob;Hong, Soon-Ku
    • 한국재료학회지
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    • 제24권5호
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    • pp.266-270
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    • 2014
  • Aluminum nitride(AlN) films were grown on the C-face and on the Si-face of (0001) silicon carbide(SiC) substrates using plasma-assisted molecular-beam epitaxy(PA-MBE). This study was focused on first-stage growth manipulation prior to the start of AlN growth. Al pre-exposure, N-plasma pre-exposure, and simultaneous exposure(Al and N-plasma) procedures were used in the investigation. In addition, substrate polarity and, first-stage growth manipulation strongly affected the growth and properties of the AlN films. Al pre-exposure on the C-face and on the Si-face of SiC substrates prior to initiation of the AlN growth resulted in the formation of hexagonal hillocks on the surface. However, crack formation was observed on the C-face of SiC substrates without Al pre-exposure. X-ray rocking-curve measurements revealed that the AlN epilayers grown on the Si-face of the SiC showed relatively lower tilt and twist mosaic than did the epilayers grown on the C-face of the SiC. The results from the investigations reported in this paper indicate that the growth conditions on the Si-face of the SiC without Al pre-exposure was highly preferred to obtain the overall high-quality AlN epilayers formed using PA-MBE.

상압소결 질화알루미늄의 소결 첨가제 변화에 따른 열적 및 기계적 특성 (Effects of Sintering Additives on the Thermal and Mechanical Properties of AlN by Pressureless Sintering)

  • 황진욱;문소윤;남상용;도환수
    • 한국분말재료학회지
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    • 제26권5호
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    • pp.395-404
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    • 2019
  • Aluminum nitride (AlN) has excellent electrical insulation property, high thermal conductivity, and a low thermal expansion coefficient; therefore, it is widely used as a heat sink, heat-conductive filler, and heat dissipation substrate. However, it is well known that the AlN-based materials have disadvantages such as low sinterability and poor mechanical properties. In this study, the effects of addition of various amounts (1-6 wt.%) of sintering additives $Y_2O_3$ and $Sm_2O_3$ on the thermal and mechanical properties of AlN samples pressureless sintered at $1850^{\circ}C$ in an $N_2$ atmosphere for a holding time of 2 h are examined. All AlN samples exhibit relative densities of more than 97%. It showed that the higher thermal conductivity as the $Y_2O_3$ content increased than the $Sm_2O_3$ additive, whereas all AlN samples exhibited higher mechanical properties as $Sm_2O_3$ content increased. The formation of secondary phases by reaction of $Y_2O_3$, $Sm_2O_3$ with oxygen from AlN lattice influenced the thermal and mechanical properties of AlN samples due to the reaction of the oxygen contents in AlN lattice.

질화알루미늄 나노분말의 자가 접착과 미세구조화 특성을 활용한 고효율 유수분리 소재 개발 (Development of Highly Efficient Oil-Water Separation Materials Utilizing the Self-Bonding and Microstructuring Characteristics of Aluminum Nitride Nanopowders)

  • 최헌주;조한동
    • 한국산업융합학회 논문집
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    • 제27권3호
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    • pp.601-607
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    • 2024
  • The discharge of oily wastewater into water bodies and soil poses a serious hazard to the environment and public health. Various conventional techniques have been employed to treat oil-water mixtures and emulsions; Unfortunately, these approaches are frequently expensive, time-consuming, and unsatisfactory outcomes. Porous materials and adsorbents are commonly used for purification, but their use is limited by low separation efficiencies and the risk of secondary contamination. Recent advancements in nanotechnology have driven the development of innovative materials and technologies for oil-contaminated wastewater treatment. Nanomaterials can offer enhanced oil-water separation properties due to their high surface area and tunable surface chemistry. The fabrication of nanofiber membranes with precise pore sizes and surface properties can further improve separation efficiency. Notably, novel technologies have emerged utilizing nanomaterials with special surface wetting properties, such as superhydrophobicity, to selectively separate oil from oil-water mixtures or emulsions. These special wetting surfaces are promising for high-efficiency oil separation in emulsions and allow the use of materials with relatively large pores, enhancing throughput and separation efficiency. In this study, we introduce a facile and scalable method for fabrication of superhydrophobic-superoleophilic felt fabrics for oil/water mixture and emulsion separation. AlN nanopowders are hydrolyzed to create the desired microstructures, which firmly adhere to the fabric surface without the need for a binder resin, enabling specialized wetting properties. This approach is applicable regardless of the material's size and shape, enabling efficient separation of oil and water from oil-water mixtures and emulsions. The oil-water separation materials proposed in this study exhibit low cost, high scalability, and efficiency, demonstrating their potential for broad industrial applications.

Si(111) 기판 위에 MOCVD 법으로 성장시킨 GaN의 성장 특성에 관한 TEM 분석 (A TEM Study on Growth Characteristics of GaN on Si(111) Substrate using MOCVD)

  • 신희연;정성훈;유지범;서수정;양철웅
    • 한국표면공학회지
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    • 제36권2호
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    • pp.135-140
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    • 2003
  • The difference in lattice parameter and thermal expansion coefficient between GaN and Si which results in many defects into the grown GaN is larger than that between GaN and sapphire. In order to obtain high quality GaN films on Si substrate, it is essential to understand growth characteristics of GaN. In this study, GaN layers were grown on Si(111) substrates by MOCVD at three different GaN growth temperatures ($900^{\circ}C$, $1,000^{\circ}C$ and $1,100^{\circ}C$), using AlN and LT-GaN buffer layers. Using TEM, we carried out the comparative investigation of growth characteristics of GaN by characterizing lattice coherency, crystallinity, orientation relationship and defects formed (transition region, stacking fault, dislocation, etc). The localized region with high defect density was formed due to the lattice mismatch between AlN buffer layer and GaN. As the growth temperature of GaN increases, the defect density and surface roughness of GaN are decreased. In the case of GaN grown at $1,100^{\circ}$, growth thickness is decreased, and columns with out-plane misorientation are formed.

입자 영상 처리 시스템을 이용한 콜로이드 입자의 제타포텐셜 측정 및 나노유체 분산 특성 연구 (A Study on the Zeta Potential Measurement and the Stability Analysis of Nano Fluids using a Particle Image Processing System)

  • 이재근;김성찬;김희중;이창건;주찬홍;이래철
    • 한국분무공학회지
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    • 제8권1호
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    • pp.16-22
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    • 2003
  • Zeta potential measurements of colloid particles suspended in a liquid are performed by a Zeta Meter developed. There are many applications of colloid stability in spray technology, paints, wastewater treatment, and pharmaceuticalse. Zeta potentials of charged particles are obtained by measuring the electrophoretic velocities of the particles using video enhanced microscopy and image analysis program. The values of zeta potential of polystyrene latex(PSL), $silica(SiO_2)$M, polyvinylidence difluoride(PVDF), silicon nitride, and alumina particles in deionized (DI) water were measured to be -40.5, -31.9, -25.2, -15.1 and -10.1mV, respectively. The particles having high zeta potential less than -20 mV are stable in DI water, because the double layers of them have strong repulsive forces mutually, and the particles having low zeta potential over -20mV are unstable due to Van Der Waals forces. Silica(>20nm), PSL, aluminum and PVDF particles were found to be stable that would remain separate and well disperse, while silicon nitride and alumina particles were found to be unstable that would gradually agglomerate in DI water.

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알루미늄 희생층을 이용한 금속 구조물의 제작 (Fabrication of metal structure using AI sacrificial layer)

  • 김정무;박재형;이상호;신동식;김용권;이윤식
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2001년도 하계학술대회 논문집 C
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    • pp.1893-1895
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    • 2001
  • In this paper, novel release technique using wet etch is proposed. The results of this technique and the results of SAMs (Self-Assembled monolayers) coated after release using this technique are compared. Fabricated structure have 100 um in width and experimental length is from 100 um to 1 mm. Thickness of aluminum sacrificial layer is 2 um and structure thickness is 2.5 um. Cantilevers and bridges are fabricated with electroplated gold and silicon nitride deposited on substrate. An aluminium sacrificial layer was evaporated thermally and removed in various wet etching solutions. Detachment length of cantilever is 200 um and detachment length of bridge is 1 mm after isooctane rinsing. And the SAMs coating condition which is appropriate for gold and nitride are studied respectively.

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알루미나 소결체의 열전도도에 대한 AlN의 첨가효과 (Effect of AlN Addition on the Thermal Conductivity of Sintered $Al_2O_3$)

  • 김영우;박홍채;오기동
    • 한국세라믹학회지
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    • 제33권3호
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    • pp.285-292
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    • 1996
  • 질소 분위기에서 상압소결한 알루미나 소결체의 열전도도에 대한 AIN 첨가효과를 검토하였다. AIN 함량이 1,5 및 10 mol%롤 증가하면 $Al_{2}O_{3}$-AIN 소결체의 열전도도는 급격히 감소하지만, 20 및 25 mol%가 첨가되면 거의 일정하였다. 1~10mol% AIN이 첨가된 알루미나 소결체의 열전도도는 $1700^{\circ}C$의 소결온도에서 최대값을 나타내었으며, 소결온도가 $1800^{\circ}C$로 증가하면 감소하는 경향을 보였다. 이러한 현상은 $1700^{\circ}C$까지는 $\alpha$-$Al_{2}O_{3}$$Al_{2}O_{3}$와 AIN이 반응하여 생성되 ALON상이 존재하나, $1750^{\circ}C$부터 ${\gamma}$-ALON($9Al_{2}O_{3}$.AIN) 및 $\Phi$($5Al_{2}O_{3}$.AIN)상 등의 2차상을 생성하는 것에 기인된다. 20 및 25 mol% AIN이 첨가된 알루미나 소결체의 열전도도는 $1800^{\circ}C$에서 최대값을 나타내며, $1600^{\circ}C$에서는 $\alpha$-$Al_{2}O_{3}$ 및 ALON상이 존재하나 그 이상의 온도에서는 모두 ALON상만이 존재하였다.

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