A TEM Study on Growth Characteristics of GaN on Si(111) Substrate using MOCVD |
신희연
(성균관대학교 금속ㆍ재료공학부)
정성훈 (성균관대학교 금속ㆍ재료공학부) 유지범 (성균관대학교 금속ㆍ재료공학부) 서수정 (성균관대학교 금속ㆍ재료공학부) 양철웅 (성균관대학교 금속ㆍ재료공학부) |
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