Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)

The Korean Institute of Electrical Engineers (대한전기학회)
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Fabrication of metal structure using AI sacrificial layer

알루미늄 희생층을 이용한 금속 구조물의 제작

  • Kim, Jung-Mu (School of electrical & computer engineering, School of chemical engineering Seoul National University) ;
  • Park, Jae-Hyoung (School of electrical & computer engineering, School of chemical engineering Seoul National University) ;
  • Lee, Sang-Ho (School of electrical & computer engineering, School of chemical engineering Seoul National University) ;
  • Sin, Dong-Sik (School of electrical & computer engineering, School of chemical engineering Seoul National University) ;
  • Kim, Yong-Kweon (School of electrical & computer engineering, School of chemical engineering Seoul National University) ;
  • Lee, Yoon-Sik (School of electrical & computer engineering, School of chemical engineering Seoul National University)
  • 김정무 (서울대학교 전기 컴퓨터 공학부) ;
  • 박재형 (서울대학교 전기 컴퓨터 공학부) ;
  • 이상호 (서울대학교 전기 컴퓨터 공학부) ;
  • 신동식 (서울대학교 응용화학부) ;
  • 김용권 (서울대학교 전기 컴퓨터 공학부) ;
  • 이윤식 (서울대학교 응용화학부)
  • Published : 2001.07.18
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Abstract

In this paper, novel release technique using wet etch is proposed. The results of this technique and the results of SAMs (Self-Assembled monolayers) coated after release using this technique are compared. Fabricated structure have 100 um in width and experimental length is from 100 um to 1 mm. Thickness of aluminum sacrificial layer is 2 um and structure thickness is 2.5 um. Cantilevers and bridges are fabricated with electroplated gold and silicon nitride deposited on substrate. An aluminium sacrificial layer was evaporated thermally and removed in various wet etching solutions. Detachment length of cantilever is 200 um and detachment length of bridge is 1 mm after isooctane rinsing. And the SAMs coating condition which is appropriate for gold and nitride are studied respectively.

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