• Applied Science and Convergence Technology
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• v.24 no.6
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• pp.262-267
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• 2015

We demonstrate the growth of single-walled carbon nanotubes (SWNTs) using ethylene-based chemical vapor deposition (CVD) and ferritin-induced catalytic particles toward growth temperature reduction. We first optimized the gas composition of $H_2$ and $C_2H_4$ at 500 and 30 sccm, respectively. On a planar $SiO_2$ substrate, high density SWNTs were grown at a minimum temperature of $760^{\circ}C$. In the case of growth using nanoporous templates, many suspended SWNTs were also observed from the samples grown at $760^{\circ}C$; low values of $I_D/I_G$ in the Raman spectra were also obtained. This means that the temperature of $760^{\circ}C$ is sufficient for SWNT growth in ethylene-based CVD and that ethylene is more effective that methane for low temperature growth. Our results provide a recipe for low temperature growth of SWNT; such growth is crucial for SWNT-based applications.

• Applied Science and Convergence Technology
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• v.24 no.6
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• pp.215-218
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• 2015

A pyroelctric properties of Ni(x)-doped PMNT systems were analyzed. Modified PMNT samples were prepared using the columbite structure method. Pyroelectric current, polarization, dielectric constant and dissipation factor of Ni-doped PMNT samples were measured as a function of temperature. By adding a small amount of NiO, pyroelectricity of PMNT is increased. Unlike the normal $ABO_3$ ferroelectric, Ni-doped PMNT showed properties for relaxor ferroelectric of causing the successive phase transition over a wide temperature. The optimum conditions for obtaining compositions with improvement ferroelectric properties are a nominal addition of 0.02 mole% Ni. Also, Ni-doped PMNT ferroelectric showed excellent pyroelectric figures of merit in the vicinity of room temperature. The pyroelectric coefficient ($0.00524C/m^2K$ at $25^{\circ}C$) and figures of merit ($F_v{\sim}0.039m^2/C$ and $F_d{\sim}0.664{\times}10^{-4}Pa^{-1/2}$) of composition PMNT with 0.02 mole% Ni are comparable to the earlier reports on lead-type pyroelectrics.

• Applied Science and Convergence Technology
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• v.26 no.5
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• pp.133-138
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• 2017

We investigated the interface defect engineering and reaction mechanism of reduced transition layer and nitride layer in the active plasma process on 4H-SiC by the plasma reaction with the rapid processing time at the room temperature. Through the combination of experiment and theoretical studies, we clearly observed that advanced active plasma process on 4H-SiC of oxidation and nitridation have improved electrical properties by the stable bond structure and decrease of the interfacial defects. In the plasma oxidation system, we showed that plasma oxide on SiC has enhanced electrical characteristics than the thermally oxidation and suppressed generation of the interface trap density. The decrease of the defect states in transition layer and stress induced leakage current (SILC) clearly showed that plasma process enhances quality of $SiO_2$ by the reduction of transition layer due to the controlled interstitial C atoms. And in another processes, the Plasma Nitridation (PN) system, we investigated the modification in bond structure in the nitride SiC surface by the rapid PN process. We observed that converted N reacted through spontaneous incorporation the SiC sub-surface, resulting in N atoms converted to C-site by the low bond energy. In particular, electrical properties exhibited that the generated trap states was suppressed with the nitrided layer. The results of active plasma oxidation and nitridation system suggest plasma processes on SiC of rapid and low temperature process, compare with the traditional gas annealing process with high temperature and long process time.

• Applied Science and Convergence Technology
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• v.25 no.4
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• pp.81-84
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• 2016

InP/InGaP quantum structures (QSs) grown on GaAs substrates by a migration-enhanced molecular beam epitaxy method were studied as a function of growth temperature (T) using photoluminescence (PL) and emission-wavelength-dependent time-resolved PL (TRPL). The growth T were varied from $440^{\circ}C$ to $520^{\circ}C$ for the formation of InP/InGaP QSs. As growth T increases from $440^{\circ}C$ to $520^{\circ}C$, the PL peak position is blue-shifted, the PL intensity increases except for the sample grown at $520^{\circ}C$, and the PL decay becomes fast at 10 K. Emission-wavelength-dependent TRPL results of all QS samples show that the decay times at 10 K are slightly changed, exhibiting the longest time around at the PL peak, while at high T, the decay times increase rapidly with increasing wavelength, indicating carrier relaxation from smaller QSs to larger QSs via wetting layer/barrier. InP/InGaP QS sample grown at $460^{\circ}C$ shows the strongest PL intensity at 300 K and the longest decay time at 10 K, signifying the optimum growth T of $460^{\circ}C$.

• Applied Science and Convergence Technology
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• v.24 no.5
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• pp.142-150
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• 2015

A failure analysis of tungsten filaments used in quadrupole mass spectrometer for plasma process monitoring was carried by using SEM and EDS. Failed at high temperature, filaments showed two kinds of failure modes. The one is that diameter of filament became thinner gradually and finally snapped. The other is that filament abruptly snapped almost at a right angle. The EDS analysis showed Fe and C, including W and Fe, on the surface of failed filament. when failed filaments were treated with plasma in mixture of Ar and $CF_4$, the amount of Fe and C decreased. The failure analysis of filament showed that the cause of filament failure is thermal evaporation and grain growth of tungsten at high temperature.

• Applied Science and Convergence Technology
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• v.25 no.4
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• pp.77-80
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• 2016

The $PbSc_{1/2}Nb_{1/2}O_3$ ceramics at a relatively low temperature of $1300^{\circ}C$ was successful synthesized. Solid state reaction of two-step process is not necessary. The dielectric constant, dielectric loss and admittance of ceramic samples were determined. The pyroelectric characteristics are in good agreement with the dielectric properties. Ferroelectric properties of well-formed the $PbSc_{1/2}Nb_{1/2}O_3$ ceramics are in agreement with broad distribution of relaxation phenomenon. Relatively strong frequency dependent of dielectric constant is observed at about $110^{\circ}C$. The distinct thermal hysteresis was observed in the measurement of the dielectric constant and dielectric loss. The critical exponents of during cooling and heating measurements in the $PbSc_{1/2}Nb_{1/2}O_3$ ceramics were 1.14 and 1.59 at 1 kHz, respectively.

• Applied Science and Convergence Technology
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• v.25 no.6
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• pp.149-153
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• 2016

Thermal oxidation has significant potential for use in synthesizing metal-oxide nanostructures from metallic materials. However, this method has limited applicability to the synthesis of multi-morphology NiO from Ni foil. Techniques consisting of mechanical and chemical approaches were used to pre-treat the Ni foil (prior to oxidation) to promote the formation of nanowires and nanoplates on the NiO layer. These morphologies were realized on the Ni foils scratched by sand paper and a knife, respectively, and subsequently heat-treated at $500^{\circ}C$ for 24 h. Small nanowires (diameter: <10 nm) formed on the Ni foil treated by absolute $HNO_3$ and then oxidized at $500^{\circ}C$ for 24 h. The formation of various morphologies (on the pre-treated Ni foil), which differ from that formed in the case of pristine Ni foil after oxidation, may be attributed to the surface melting phenomenon that occurs during the nucleation process.

• Applied Science and Convergence Technology
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• v.24 no.1
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• pp.22-26
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• 2015

The optical properties of InP/GaP short-period superlattice (SPS) structures grown at various temperatures from $400^{\circ}C$ to $490^{\circ}C$ have been investigated by using temperature-dependent photoluminescence (PL) and emission wavelength-dependent time-resolved PL measurements. The PL peak energy for SPS samples decreases as the growth temperature increases. The decreased PL energy of ~10 meV for the sample grown at $425^{\circ}C$ compared to that for $400^{\circ}C$-grown sample is due to the CuPt-B type ordering, while the SPS samples grown at $460^{\circ}C$ and $490^{\circ}C$ exhibit the significant reduction of the PL peak energies due to the combined effects of the formation of lateral composition modulation (LCM) and CuPt-B type ordering. The SPS samples with LCM structure show the enhanced carrier lifetime due to the spatial separation of carriers. This study represents that the bandgap energy of InP/GaP SPS structures can be controlled by varying growth temperature, leading to LCM formation and CuPt-B type ordering.

• Applied Science and Convergence Technology
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• v.24 no.6
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• pp.224-227
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• 2015

Ferroelectric $Pb_2(Sc,Nb)O_6$ were prepared under two different sintering conditions using the oxide mixing method and the electrical properties were measured. The sintering conditions were $1350^{\circ}C$ for 25 minutes and $1400^{\circ}C$ for 20 minutes. EDX spectroscopy and XRD were used to determine the crystalline characteristic of the $Pb_2(Sc,Nb)O_6$ compositions Pyrochlore phase showed about 2% in all $Pb_2(Sc,Nb)O_6$ specimens. It expands the growth of crystals in samples sintered at $1400^{\circ}C$ than $1350^{\circ}C$, but all samples were the optimal crystallization. The temperature and frequency dependence of the complex dielectric constant and admittance were measured to analyze the electrical properties. The high dielectric constant of the specimens reflects the good stoichiometry and crystallization. The maximum value of the dielectric constant in the two specimens treated with sintering at $1350^{\circ}C$ and $1400^{\circ}C$ were more than 27,000, and the dielectric loss at room temperature is smaller than 0.05. The maximum dielectric constant decreased with increasing frequency, the transition temperature also increased in $Pb_2(Sc,Nb)O_6$ compositions. The admittance and susceptance values reach a peak at all temperatures, and the magnitude of the peak increases with increasing measuring temperature. Strong frequency dependent of maximum admittance, susceptance, dielectric constant and dielectric loss were observed.

• Applied Science and Convergence Technology
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• v.24 no.6
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• pp.254-256
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• 2015

Effect of growth temperature ($T_g$) on the structural and optical properties of $In_{0.5}Ga_{0.5}As$ atomic layer epitaxial (ALE) quantum dots (QDs) is investigated in the range of $T_g=480-510^{\circ}C$. $In_{0.5}Ga_{0.5}As$ ALE QDs consist of 5 periods of short-period superlattices (SPSs) of 1 monolayer-thick InAs and GaAs. Number of coalescent QDs decreases as $T_g$ increases, and they disappear at $T_g=510^{\circ}C$. As $T_g$ increases in the range of $480-495^{\circ}C$, sizes of QDs increase, and densities of QDs decrease due to merge of QDs. On the contrary, although sizes of QDs are maintained at $T_g=495-510^{\circ}C$, densities of QDs decrease. This is attributed to the desorption of material-mainly indium-during the growth interruption. This conjecture is supported by the optical properties of the QDs as a function of $T_g$. As a result, we propose that optimum growth temperature of the QD is $495^{\circ}C$ with less repetition of SPSs than 5.