Influence of growth Temperature on the Formation of 10 monolayer-thick InGaAs Quantum dots formed with 5 repetitions of 1 monolayer-thick InAs and 1 monolayer-thick GaAs

Effect of growth temperature ($T_g$) on the structural and optical properties of $In_{0.5}Ga_{0.5}As$ atomic layer epitaxial (ALE) quantum dots (QDs) is investigated in the range of $T_g=480-510^{\circ}C$. $In_{0.5}Ga_{0.5}As$ ALE QDs consist of 5 periods of short-period superlattices (SPSs) of 1 monolayer-thick InAs and GaAs. Number of coalescent QDs decreases as $T_g$ increases, and they disappear at $T_g=510^{\circ}C$. As $T_g$ increases in the range of $480-495^{\circ}C$, sizes of QDs increase, and densities of QDs decrease due to merge of QDs. On the contrary, although sizes of QDs are maintained at $T_g=495-510^{\circ}C$, densities of QDs decrease. This is attributed to the desorption of material-mainly indium-during the growth interruption. This conjecture is supported by the optical properties of the QDs as a function of $T_g$. As a result, we propose that optimum growth temperature of the QD is $495^{\circ}C$ with less repetition of SPSs than 5.